p‐type conducting ZnO:P microwires prepared by direct carbothermal growth

Abstract Phosphorous‐doped (ZnO:P) and undoped ZnO wires with diameter of several micrometers and length of several hundred micrometers were thermally grown directly on phosphorus pentoxide doped and undoped ZnO:graphite targets, respectively. The cathodoluminescence spectra of single ZnO:P microwires show three typical acceptor‐related emissions which are attributed to (A⁰, X), (e, A⁰), and DAP. Three‐terminal, gate voltage dependent electrical measurements of back‐gate field effect transistors with the microwires as channels indicate reproducibly that undoped ZnO and ZnO:P microwires are n‐type and p‐type conductive, respectively. The p‐type conductivity was found to be stable over more than six months. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)