DataVXphysica status solidi (RRL) – Rapid Research LettersPaper
journal article·2022-10Open access

Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer

Greta Segantini, Rabei Barhoumi, Benoît Manchon, Ingrid Cañero Infante, Pedro Rojo Romeo, Matthieu Bugnet, Nicolas Baboux, Shruti Nirantar, Damien Deleruyelle, Sharath Sriram, Bertrand Vilquin

physica status solidi (RRL) – Rapid Research Letters· Volume 16· Issue 10
Publisher pageOpen full text
Source abstract

Abstract

Ultra-Thin Hf0.5Zr0.5O2 Capacitors Through interface engineering, Greta Segantini and co-workers improve ferroelectricity and scalability of hafnium zirconium oxide (HZO)-based capacitors. In background, a structure with HZO sandwiched between titanium nitride (TiN) electrodes. In foreground, a titanium layer is inserted at the top interface. It promotes an oxygen redistribution that contributes to a significant improvement of HZO ferroelectric properties. More details can be found in article number 2100583.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Univ Lyon Ecole Centrale Lyon INSA Lyon UCBL CPE Lyon CNRS INL UMR5270 69130 Ecully France

Functional Materials and Microsystems Research Group and Micro Nano Research Facility RMIT University Melbourne VIC 3000 Australia

Univ Lyon INSA Lyon Ecole Centrale Lyon UCBL CPE Lyon CNRS INL UMR5270 69621 Villeurbanne France

Univ Lyon CNRS INSA Lyon UCBL MATEIS INL UMR5510 69621 Villeurbanne France

References

Reference metadata was not supplied for this record.