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journal article·2026-05Open access

Kilo‐Volt Class Al 0.65 Ga 0.35 N Channel Metal Insulator Semiconductor HEMTs With >300MW/cm 2 Baliga Figure of Merit on Sapphire Substrate

Khush Gohel, Swarnav Mukhopadhyay, Md Tahmidul Alam, Jiahao Chen, Surjava Sanyal, Ruixin Bai, Guangying Wang, Shubhra Pasayat, Chirag Gupta

physica status solidi (RRL) – Rapid Research Letters· Volume 20· Issue 5
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Source abstract

Abstract

In this work, we demonstrate an Al‐rich AlGaN channel metal insulator semiconductor HEMT device operating at >2 kV on a sapphire substrate. Devices with 2and 2.6 kV breakdown voltage demonstrated a Baliga figure of merit (BFOM) of 288 and 325 MW/cm 2 with an on‐resistance of 14.15 and 21.02 mΩ.cm 2 , respectively. Reported BFOM of 325 MW/cm 2 value is 1.7 times the state‐of‐the‐art passivated AlGaN channel transistors on sapphire substrate. The obtained results represent the potential of the ultra‐wide bandgap (UWBG) AlGaN channel transistors for advanced power electronics applications.
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Research context

Electronic materials

OpenAlex topics: GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical and Computer Engineering University of Wisconsin‐Madison Madison Wisconsin USA

Funding

National Science Foundation

References (45)

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