Sb2S3 quantum dots: diffusion‐controlled growth and characterization
Source abstract
Abstract
Abstract The quantum dots of antimony trisulphide, a potential semiconductor for various applications, are grown in glass matrix for the first time and are characterized by various techniques. The dependence of the average dot size on growth parameters like growth temperature and time is systematically studied for the dot size range of 5–80 nm. The linear blue shift of band gap of dots with inverse square of dot size clearly indicates the typical behavior of quantum dots in a strong quantum confinement regime. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · 2D Materials and Applications
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