On the Importance of the Work Function and Electron Carrier Density of Oxide Electrodes for the Functional Properties of Ferroelectric Capacitors
Source abstract
Abstract
It is important to understand the effect of the interfaces between the oxide electrode layers and the ferroelectric layer on the polarization response for optimizing the device performance of all‐oxide ferroelectric devices. Herein, the effects of the oxide La0.07Ba0.93SnO3 (LBSO) as an electrode material in an PbZr0.52Ti0.48O3 (PZT) ferroelectric capacitor are compared with those of the more commonly used SrRuO3 (SRO) electrode. SRO (top)/PZT/SRO (bottom), SRO/PZT/LBSO, and SRO/PZT/2 nm SRO/LBSO devices are fabricated. Only marginal differences in crystalline properties, determined by X‐ray diffraction and scanning transmission electron microscopy, are found. High‐quality polarization loops are obtained, but with a much larger coercive field for the SRO/PZT/LBSO device. In contrast to the SRO/PZT/SRO device, the polarization decreases strongly with increasing field cycling. This fatigue problem can be remedied by inserting a 2 nm SRO layer between PZT and LBSO. It is argued that strongly increased charge injection into the PZT occurs at the bottom interface, because of the low PZT/LBSO interfacial barrier and the much lower carrier density in LBSO, as compared with that in SRO, causing a low dielectric constant, depleted layer in LBSO. The charge injection creates a trapped space charge in the PZT, causing the difference in fatigue behavior.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
MESA+ Institute for Nanotechnology University of Twente PO Box 217 7500 AE Enschede The Netherlands
Electron Microscopy for Materials Science (EMAT) University of Antwerp 2020 Antwerp Belgium
Funding
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
References (45)
Show source-provided references
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41. This is a possible consequence of the explanation given by Tagantsev and Gerra in their review paper on interface effects[20] for the strong reduction of the coercive field by orders of magnitude by interface-stimulated nucleation of reverse domains due to the contribution of interfacial energy γ = ζPsof the nucleating reversal domain with the electrode to the total energy of the nucleus. Here ζ is considered as the surface equivalent of the electric field. Considering γ = ζPsas a vector product (in analogy with the volume energy termEP) then the direction of the polarization becomes very important. For negative γ the coercive field even increases above the value for γ = 0! Consequently in practice reverse nucleation domains arise first (when changing applied field) when the ζ vector and polarization have the same direction (γ > 0) and at only one electrode. In assuming that the positive (respectively negative) coercive field corresponds to reverse domain nucleation at the top (bottom) interface we have—within the framework of this nucleation model—implicitly assumed that the ζ vector is pointing into the ferroelectric at both interfaces (which corresponds with the explanatory figure [Figure 14] given in ref. [20]). Further experimental investigation is required that this is indeed the case.
42. The capacitance change is approximately constant in the range −340 to −200 kV cm−1(respectively 200–340 kV cm−1). was calculated from the extreme field values but could have been calculated at any field value in this range.
43. In discussion with the reviewers we realized this is a strong simplification of the physics. In the Supporting Information we reconsidered the band diagrams taking interfacial dipoles into account. We show that interface dipoles influence the interfacial barrier heights but not the self-bias which is only deteremined by the difference in work functions.
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45. This argumentation is applicable if one does not take into account interfacial dipoles arising from a finite distance between the polarization and screening charges in constructing the band diagrams. In the Supporting Information we have redone the analysis including the presence of interfacial dipoles. In that case the LBSO/PZT interfacial barrier height is enhanced by the interfacial dipole formed across the depleted interfacial LBSO layer. However the barrier height within the reversal domain is strongly reduced because within the reversal domain the interfacial dipole is reversed in direction and secondly because of the low dielectric constant of this layer causing a rapid drop of barrier height toward the PZT. The analysis shows that the effective barrier for charge injection is dominated by the value of the dielectric constant of the depleted LBSO layer and to much less extent the interfacial barrier height without interface dipole.