Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry
Source abstract
Abstract
Optoelectronics This image shows an illustration of the light trapping geometry used to capture low absorbing light used to identify the relative efficiency of different low absorption coefficient photo-absorption pathways for SiC:V with varying co-doping, shown for the cases considered in the middle and bottom rows. More details can be found in article number 2000315 by Lars F. Voss and co-workers.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies
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Affiliations
Department of Physics and Astronomy University of Missouri–Kansas City 5100 Rockhill Road Kansas City MO 64110 USA
Materials Engineering Division Lawrence Livermore National Laboratory 7000 East Ave Livermore CA 94550 USA
References
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