DataVXphysica status solidi (a)Paper
journal article·2017-06

Effective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer

Zhi Xiang Cheng, Jing Ping Xu, Lu Liu, Yong Huang, Pui To Lai, Wing Man Tang

physica status solidi (a)· Volume 214· Issue 6
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Source abstract

Abstract

Ge metal‐oxide‐semiconductor (MOS) capacitor with YON/LaON, as interface passivation layer (IPL), and HfO2, as gate dielectric, is proposed to take advantage of both the good passivation effect by LaON and the suppressed intermixing between HfO2 and Ge by YON. As a result, superior interfacial and electrical properties are obtained, as compared to samples with only YON or LaON as IPL: high k value (19.5), low interface‐state density (6.64 × 1011 cm−2 eV−1) and oxide‐charge density (−4.18 × 1012 cm−2), small gate leakage current (1.15 × 10−4 A cm−2 at Vg = Vfb + 1 V), and good high‐field reliability. Schematic diagram (a) and C–V curves (b) of the gate stack with YON/LaON dual IPL.
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Research context

Electronic materials

OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 P.R. China

Department of Electrical and Electronic Engineering The University of Hong Kong Pokfulam Road Hong Kong

Department of Applied Physics The Hong Kong Polytechnic University Hung Hom Hong Kong

Funding

National Natural Science Foundation of China · University of Hong Kong · Hong Kong Polytechnic University

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