Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics
Source abstract
Abstract
In this review, the epitaxial growth of transition metal nitrides (TMNs) is explored, focusing on sputter epitaxy as a versatile method for developing advanced materials such as NbN superconductors and ScAlN ferroelectrics. In the recent studies, it is shown that, unlike conventional growth techniques, sputter epitaxy enables the deposition of high‐melting‐point transition metals, offering advantages for growing thin films with unique properties. In this review, recent progress in integrating TMNs with nitride semiconductors to fabricate hybrid devices that exhibit both superconducting and ferroelectric characteristics is addressed. These developments underscore the potential of sputter epitaxy as a foundational tool for advancing the next generation of electronic and quantum devices.
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Research context
OpenAlex topics: Metal and Thin Film Mechanics · Acoustic Wave Resonator Technologies · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Technology Tokyo University of Science Tokyo 125‐8585 Japan
Department of Electrical Engineering and Information Systems The University of Tokyo Tokyo 113‐8656 Japan
Graduate School of Engineering, Innovation Center for Semiconductor and Digital Future Mie University Tsu 514‐8507 Japan
Institute of Materials and Systems for Sustainability Nagoya University Nagoya 464‐8601 Japan
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