Top‐Gated Polymer Light‐Emitting Transistors Based on the Device Fabrication without Intermixing of Poly(methyl methacrylate) Gate Dielectric Formed from Fluorine‐Based Orthogonal Solvent

Poly(methyl methacrylate) (PMMA) gate dielectric formed using fluorine‐based solvent, CF₃CH₂OCF₂CHF₂ (AGC, AE‐3000), is useful to prevent mixing of the dielectric layer with the emissive layer for top‐gated organic light‐emitting transistor (OLET) device fabrication. The device performance of OLETs based on a poly(p‐phenylene vinylene) derivative, Super Yellow, is improved because of the fabrication without intermixing. For an OLET with Pt‐tetraphenyltetrabenzoporphyrin [Pt(tpbp)] doped in poly(alkylfluorene), a near‐infrared emission from Pt(tpbp) and a relatively high external quantum efficiency of approximately 1% are achieved. This device fabrication method opens perspectives in the development of the damage‐free fabrication processes in printed top‐gated OLETs.