DataVXphysica status solidi (a)Paper
journal article·2021-03

Over 59 mV pH−1 Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron‐Doped Diamond Solution‐Gate Field‐Effect Transistors

Yu Hao Chang, Yutaro Iyama, Kaito Tadenuma, Shuto Kawaguchi, Teruaki Takarada, Shaili Falina, Mohd Syamsul, Hiroshi Kawarada

physica status solidi (a)· Volume 218· Issue 5
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Source abstract

Abstract

pH sensing facilitates many substantial aspects of the society such as chemical laboratory analysis, agriculture, or water and soil qualities. However, existing pH sensors have problems and limitations such as fragility, hysteresis, or slow responding time. In this research, a new method utilizing fluorocarbon thin film via fluorine termination and boron‐doped diamond (BDD) solution‐gate field‐effect transistors (SGFETs) for pH sensing is developed for the first time. The fluorocarbon film device demonstrates a high pH sensitivity of 67.4 and 34.9 mV pH−1 in acid and alkaline pH regions, respectively.
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Research context

Electronic materials

OpenAlex topics: Analytical Chemistry and Sensors · Diamond and Carbon-based Materials Research · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Graduate School of Nanoscience and Nanoengineering Waseda University 3-4-1 Okubo Tokyo 169-8555 Japan

Collaborative Microelectronic Design Excellence Centre Universiti Sains Malaysia Bayan Lepas Penang 11900 Malaysia

Institute of Nano Optoelectronics Research and Technology Universiti Sains Malaysia Bayan Lepas Penang 11900 Malaysia

Kagami Memorial Laboratory for Materials Science and Technology Waseda University 2-8-26 Nishiwaseda Tokyo 169-0051 Japan

References (28)

Show source-provided references
1. 10.1007/s10008-006-0120-410.1007/s10008-006-0120-4 ↗
2. 10.1109/TBME.1972.32413710.1109/TBME.1972.324137 ↗
3. 10.1016/0925-4005(90)80018-U10.1016/0925-4005(90)80018-U ↗
4. 10.1016/S0925-4005(98)00032-X10.1016/S0925-4005(98)00032-X ↗
5. 10.3390/s712302710.3390/s7123027 ↗
6. 10.1002/pssa.20110050310.1002/pssa.201100503 ↗
7. 10.1002/pssa.20030380910.1002/pssa.200303809 ↗
8. 10.3390/s1807217810.3390/s18072178 ↗
9. 10.1063/1.245439010.1063/1.2454390 ↗
10. 10.3390/s1705104010.3390/s17051040 ↗
11. 10.1038/nmat76810.1038/nmat768 ↗
12. Gupta N. · J. Sci. Ind. Res. · 2006 · 65 · 549
13. 10.1016/S0032-3861(96)00612-X10.1016/S0032-3861(96)00612-X ↗
14. 10.3390/s712302710.3390/s7123027 ↗
15. 10.1016/S0925-9635(02)00024-910.1016/S0925-9635(02)00024-9 ↗
16. 10.1063/1.496799910.1063/1.4967999 ↗
17. 10.1016/S0925-9635(98)00225-810.1016/S0925-9635(98)00225-8 ↗
18. 10.3390/nano906084810.3390/nano9060848 ↗
19. 10.1016/j.diamond.2007.07.01610.1016/j.diamond.2007.07.016 ↗
20. 10.1143/JJAP.35.363510.1143/JJAP.35.3635 ↗
21. 10.1143/JJAP.35.652110.1143/JJAP.35.6521 ↗
22. 10.1384/jsa.17.26910.1384/jsa.17.269 ↗
23. 10.1016/j.jcis.2012.03.01010.1016/j.jcis.2012.03.010 ↗
24. 10.1016/S0003-2670(00)82762-210.1016/S0003-2670(00)82762-2 ↗
25. 10.1016/0250-6874(86)80013-010.1016/0250-6874(86)80013-0 ↗
26. 10.1016/j.snb.2006.04.11210.1016/j.snb.2006.04.112 ↗
27. 10.1149/1.140580310.1149/1.1405803 ↗
28. 10.1149/1.212373410.1149/1.2123734 ↗