Microstructural modification of nc‐Si/SiO_x films during plasma‐enhanced chemical vapor deposition

Abstract Nanocrystalline‐silicon embedded silicon oxide films are prepared by plasma‐enhanced chemical vapor deposition (PECVD) at 300 °C without post‐heat treatment. Measurements of XPS, IR, XRD, and HREM are performed. Microstructural modifications are found occurring throughout the film deposition. The silica network with a high oxide state is suggested to be formed directly under the abduction of the former deposited layer, rather than processing repeatedly from the original low‐oxide state of silica. Nanocrystalline silicon particles with a size of 6–10 nm are embedded in the SiO_x film matrix, indicating the potential application in Si‐based optoelectronic integrity. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)