Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron–hole interaction

Abstract The present special issue of physica status solidi (a) contains contributions from the 2nd International Workshop on Modulation Spectroscopy of Semiconductor Structures (MS³), held in Wrocław, Poland, 29 June–1 July 2006. Editor's Choice is the article by R. Goldhahn et al. [1] which reports a detailed analysis of electroreflectance (ER) spectra for AlGaN/GaN heterostructures containing a two‐dimensional electron gas (2DEG). The cover picture depicts a color‐converted bias voltage map of the ER spectra around the GaN band gap recorded at a temperature of 5 K. The dark‐red color corresponds to a ΔR /R signal of 3 × 10^–2. The Burstein–Moss (BM) shift and the position of the first Franz–Keldysh oscillation (FKO) are indicated. Rüdiger Goldhahn's research focuses on the further development of modulation spectroscopy methods for the characterization of bulk semiconductors and low‐dimensional systems. Andreas T. Winzer investigated the electro‐optical properties of III‐nitride heterostructures and is currently engaged in the solar cell production at Ersol Thin Film GmbH. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)