Coherent growth and characterization of van der Waals 1T−VSe2 layers on GaAs(111)B using molecular beam epitaxy

We report epitaxial growth of vanadium diselenide (${\mathrm{VSe}}₂$) thin films in the octahedrally coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy, and x-ray photoelectron spectroscopy indicate high-quality thin films. Further studies show that monolayer ${\mathrm{VSe}}₂$ films on GaAs are not air stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that ${\mathrm{VSe}}₂$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for two- and three-dimensional hybrid devices.