Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films

The ZnO thin films were prepared on the quartz substrate by the sol–gel method and the UV photodetector was constructed on the ZnO thin films, with a circular spiral structure in contact 30 nm IrO2 electrodes. The ZnO thin films were crystallized at various temperatures (600–700 ◦ C) for 1 h in a pure oxygen atmosphere, then were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate the crystallized thin film structures. From photoluminescence (PL) and I–V measurements, the 650 ◦ C thin film not only possessed better crystallization but also had nanowire structures that revealed excellent potential as a UV photodetector.