Effects in Surface Free Energy of Sputter-Deposited VNx Films

Vanadium nitride (VN x ) thin films have attracted much attention for semiconductor integrated circuit (IC) packaging molding dies, and forming tools due to their excellent hardness and, thermal stability. VN x thin films with VN0.45, VN0.83, VN1.22, VN1.73, VN2.06 were prepared using a radio frequency (RF) sputter technique. The experimental results showed that the contact angle at 20°C increases with increasing nitrogen content of the VN x films, to 101.4° corresponding to VN1.73 and then decreased. In addition, the contact angles decreased with increasing surface temperature, because an increase of the surface temperature disrupts the hydrogen bonds between water and the films and the water gradually vaporizes. The total surface fee energy (SFE) at 20°C decreased with nitrogen content of the VN x films to 29.8 mN/m (VN1.73) and then increased. This is because a larger contact angle means weaker hydrogen bonding which results in a lower SFE. The polar SFE component had the same trend as the total SFE, but the dispersive SFE component had the opposite trend. The polar SFE component is also lower than the dispersive SFE component. This is because hydrogen bonds are polar. The total SFE, dispersive SFE and polar SFE of the VN x films all decrease with increasing surface temperature. This is because with increasing temperature, water evaporates from the surface, disrupting hydrogen bonds and hence increasing surface entropy. The film roughness has an obvious effect on the SFE and there is tendency for the SFE to increase with increasing film surface roughness. As a result the SFE and surface roughness can be expressed in terms of a simple ratio function.