Selective removal of 10–40-nm particles from silicon wafers using laser-induced plasma shockwaves

Current and projected nanoparticle cleaning requirements, especially in semiconductor and nano-manufacturing, necessitate a technique that is not only capable of removing sub-100 nm particles, but also is damage-free and able to perform localized (selective) area cleaning of a relatively small number of particles. A particle cleaning technique based on laser-induced plasma (LIP) shockwaves has been considered and investigated in recent years as a prospective approach. In the current study, the removal of polystyrene latex (PSL) nanoparticles in the diameter range of 10–40 nm from silicon substrates is demonstrated using shockwaves generated by the expansion of LIP for the first time. The effectiveness and practical uses of the LIP technique in the sub-100-nm range are also discussed.