Bottom gate organic thin-film transistors fabricated by ultraviolet transfer embossing with improved device performance

Abstract Ultraviolet transfer embossing is optimized to fabricate bottom gate organic thin-film transistors (OTFTs) on flexible plastic substrates, achieving significant improved device performance ( μ = 0.01–0.02cm 2 /Vs; on/off ratio = 10 4 ) compared with the top gate OTFTs made previously by the same method ( μ = 0.001–0.002 cm 2 /Vs; on/off ratio = 10 2 ). The performance improvement can be ascribed to the reduced roughness of the dielectric-semiconductor interface ( R rms = 0.852 nm) and thermally cross-linked PVP dielectric which leads to reduced gate leakage current and transistor off current in the bottom-gated configuration. This technique brings an alternative great opportunity to the high-volume production of economic printable large-area OTFT-based flexible electronics and sensors.