Electronic and optoelectronic properties of zinc phthalocyanine single-crystal nanobelt transistors

Abstract ZnPc single-crystal nanobelts were grown by a physical vapor transport process with the length ranging from 20 to 150 μm and the width ranging from several tens of nanometers to several micrometers. Based on high crystalline ZnPc nanobelts, its single-crystal nanobelt transistors were realized. The field-effect mobility is as high as 0.75 cm2V−1s−1 with OTS modified SiO2 as dielectric, which is the highest value for the reported ZnPc devices. In addition, ZnPc nanobelt transistors show the excellently photosensitive properties with the high photoswitching ratio (|Ilight/Idark|) of 7.34 × 103 and the high photoresponsivity at 1.57 × 104 AW−1. These results indicate the future potential of ZnPc single-crystal transistors in organic electronic and optoelectronic applications.