Compact model for the bias-depended low-frequency noise in organic thin-film transistors due to carrier-number and mobility-fluctuation effects
Source abstract
Abstract
A charge-based compact model for the bias-dependent low-frequency noise in organic thin-film transistors is presented. The model combines the carrier-number fluctuation effect and the fluctuation of the carrier mobility according to the Hooge model to predict the drain-current noise. The model has been verified using experimental data from a large number of organic transistors with two different channel lengths fabricated in the inverted staggered device architecture on a flexible polymeric substrate.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Thin-Film Transistor Technologies · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
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