N-type field-effect transistor based on a fluorinated-graphene

Abstract A fluorinated-graphene, 2,5,8,11,14,17-hexafluoro-hexa-peri-hexabenzocoronene (6F-HBC), has been synthesized. 6F-HBC was deposited by vacuum sublimation as an active layer in an organic field-effect transistor (OFET). The OFET with 6F-HBC performed as an n-type semiconductor, while that with hexa-peri-hexabenzocoronene (HBC) performed as a p-type semiconductor. The electron field-effect mobility and on/off ratio for 6F-HBC were 1.6 × 10 - 2 cm 2 / Vs and 10 4 , respectively. Hexafluoro-substituting reduces both the highest occupied molecular orbital and lowest unoccupied molecular orbital levels by 0.5 eV, which is suitable for electron injection from the electrode. 6F-HBC has a face-to-face structure which is a preferable crystal structure for carrier transport.