Visualizing band structure hybridization and superlattice effects in twisted MoS 2 /WS 2 heterobilayers
Source abstract
Abstract
Abstract A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two-dimensional (2D) van der Waals heterostructure produces a moiré superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band structures, yet direct observation of the changes to the electronic structure introduced with varying twist angle has so far been missing. Here, we probe heterobilayers comprised of single-layer MoS 2 and WS 2 with twist angles ranging from 2 ∘ to 20 ∘ and determine the twist angle-dependent evolution of the electronic band structure using micro-focused angle-resolved photoemission spectroscopy. We find strong interlayer hybridization between MoS 2 and WS 2 electronic states at the \overset{ˉ}{Γ} -point of the Brillouin zone, leading to a shift of the valence band maximum in the heterostructure. Replicas of the hybridized states are observed at the center of twist angle-dependent moiré mini Brillouin zones. We confirm that these replica features arise from the inherent moiré potential by comparing our experimental observations with density functional theory calculations of the superlattice dispersion. Our direct visualization of these features underscores the potential of using twisted heterobilayer semiconductors to engineer hybrid electronic states and superlattices that alter the electronic and optical properties of 2D heterostructures for a wide range of twist angles.
Source: crossref · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (60)
Show source-provided references
1. Van der waals heterostructures10.1038/nature12385 ↗
2. Graphene-like two-dimensional materials10.1021/cr300263a ↗
3. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides10.1021/nn500064s ↗
4. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures10.1038/nnano.2014.167 ↗
5. Valleytronics in 2D materials10.1038/natrevmats.2016.55 ↗
6. Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures10.1038/ncomms12512 ↗
7. Interlayer trions in the MoS2/WS2 van der Waals heterostructure10.1021/acs.nanolett.7b05224 ↗
8. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides10.1103/PhysRevLett.108.196802 ↗
9. Valley splitting and polarization by the Zeeman effect in monolayer MoSe210.1103/PhysRevLett.113.266804 ↗
10. Interlayer valley excitons in heterobilayers of transition metal dichalcogenides10.1038/s41565-018-0193-0 ↗
11. Graphene bilayer with a twist: electronic structure10.1103/PhysRevLett.99.256802 ↗
12. Unconventional superconductivity in magic-angle graphene superlattices10.1038/nature26160 ↗
13. Correlated insulator behaviour at half-filling in magic-angle graphene superlattices10.1038/nature26154 ↗
14. Flat bands in twisted bilayer transition metal dichalcogenides10.1038/s41567-020-0958-x ↗
15. Interlayer hybridization and moiré superlattice minibands for electrons and excitons in heterobilayers of transition-metal dichalcogenides10.1103/PhysRevB.99.125424 ↗
16. Ultraflatbands and shear solitons in moiré patterns of twisted bilayer transition metal dichalcogenides10.1103/PhysRevLett.121.266401 ↗
17. Correlated electronic phases in twisted bilayer transition metal dichalcogenides10.1038/s41563-020-0708-6 ↗
18. Topological exciton bands in moiré heterojunctions10.1103/PhysRevLett.118.147401 ↗
19. Theory of optical absorption by interlayer excitons in transition metal dichalcogenide heterobilayers10.1103/PhysRevB.97.035306 ↗
20. Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers10.1038/s41586-019-0957-1 ↗
21. Evidence for moiré excitons in van der Waals heterostructures10.1038/s41586-019-0975-z ↗
22. Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures10.1038/s41586-019-0986-9 ↗
23. Twist angle-dependent interlayer exciton lifetimes in van der Waals heterostructures10.1103/PhysRevLett.126.047401 ↗
24. Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy10.1021/acs.nanolett.6b01007 ↗
25. Tunable moiré superlattice of artificially twisted monolayers10.1002/adma.201901077 ↗
26. Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist10.1021/nl501077m ↗
27. Interlayer coupling in twisted WSe2/WS2 bilayer heterostructures revealed by optical spectroscopy10.1021/acsnano.6b01486 ↗
28. Tuning the electronic structure of monolayer graphene/Mos2 van der waals heterostructures via interlayer twist10.1103/PhysRevB.92.201409 ↗
29. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction10.1038/ncomms8666 ↗
30. Determination of band offsets, hybridization and exciton binding in 2D semiconductor heterostructures10.1126/sciadv.1601832 ↗
31. Nanoscale mapping of quasiparticle band alignment10.1038/s41467-019-11253-2 ↗
32. Nano focusing of soft x-rays by a new capillary mirror optic10.1080/08940886.2018.1483660 ↗
33. Direct observation of minibands in a twisted graphene/ws2 bilayer10.1126/sciadv.aay6104 ↗
34. Giant spin-splitting and gap renormalization driven by trions in single-layerWS2/h-BN heterostructures10.1038/s41567-017-0033-4 ↗
35. Imaging microscopic electronic contrasts at the interface of single-layer ws2 with oxide and boron nitride substrates10.1063/1.5088968 ↗
36. Electronic structure of exfoliated and epitaxial hexagonal boron nitride10.1103/PhysRevMaterials.2.074006 ↗
37. Effects of defects on band structure and excitons in WS2 revealed by nanoscale photoemission spectroscopy10.1021/acsnano.8b06574 ↗
38. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors10.1103/PhysRevB.84.153402 ↗
39. Electronic structure of epitaxial single-layer Mos210.1103/PhysRevLett.114.046802 ↗
40. Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy10.1103/PhysRevLett.111.106801 ↗
41. Electronic properties of the MoS2-WS2 heterojunction10.1103/PhysRevB.87.075451 ↗
42. Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides MoS2, MoSe2, WS2 and WSe210.1103/PhysRevB.89.075409 ↗
43. Synthesis of epitaxial single-layer MoS2 on au(111)10.1021/acs.langmuir.5b02533 ↗
44. Direct measurement of the tunable electronic structure of bilayer MoS2 by interlayer twist10.1021/acs.nanolett.5b03883 ↗
45. Lattice dynamics of hexagonal MoS2 studied by neutron scattering10.1103/PhysRevB.12.659 ↗
46. Crystal structures of tungsten disulfide and diselenide10.1016/0022-4596(87)90057-0 ↗
47. Structure of epitaxial graphene on ir(111)10.1088/1367-2630/10/4/043033 ↗
48. Interlayer excitons and band alignment in MoS2/hBN/WSe2 van der waals heterostructures10.1021/acs.nanolett.6b04275 ↗
49. Imaging moiréflat bands in three-dimensional reconstructed WSe2/WS2 superlattices10.1038/s41563-021-00923-6 ↗
50. Flat band properties of twisted transition metal dichalcogenide homo- and heterobilayers of MoS2, MoSe2, WS2 and WSe210.1088/2053-1583/ac15d9 ↗
51. Ultraflatbands and shear solitons in moiré patterns of twisted bilayer transition metal dichalcogenides10.1103/PhysRevLett.121.266401 ↗
52. Band unfolding made simple10.1088/1361-648x/ab6e8e ↗
53. k·p theory for two-dimensional transition metal dichalcogenide semiconductors10.1088/2053-1583/2/2/022001 ↗
54. Charge trapping and exciton dynamics in large-area CVD grown MoS210.1021/acs.jpcc.6b00647 ↗
55. Auger recombination in chemical vapor deposition-grown monolayer WS210.1021/acs.jpclett.6b02413 ↗
56. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set10.1016/0927-0256(96)00008-0 ↗
57. From ultrasoft pseudopotentials to the projector augmented-wave method10.1103/PhysRevB.59.1758 ↗
58. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
59. Semiempirical GGA-type density functional constructed with a long-range dispersion correction10.1002/jcc.20495 ↗
60. Special points for Brillouin-zone integrations10.1103/PhysRevB.13.5188 ↗