Negative capacitance transistors with monolayer black phosphorus
Source abstract
Abstract
Abstract Quantum transport properties of negative capacitance transistors (NC-FETs) with monolayer black phosphorus (ML-BP) are theoretically studied. Our calculations show that atomistic thin ML-BP can enhance the amplification effect of the ferroelectric layer, and subthreshold swing is effectively reduced to 27 mV per decade in ML-BP NC-FETs. Device performance can be further improved by increasing the thickness of ferroelectric layer and using thinner or high-k insulate layer. Due to the temperature dependence of ferroelectric layer ML-BP NC-FETs have higher on-state current at low temperature, which is different from that of MOSFETs. By considering the metal–ferroelectric interface layer, our calculations show that the device performance is degraded by the interface. Compared with the International Technology Roadmap (ITRS) 2013 requirements, ML-BP NC-FETs can fulfil the ITRS requirements for high-performance logic with a reduced supply voltage. The new device can achieve very low power delay product per device width at VD=0.3 V, which is just 44% of that in ML-BP FETs.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · 2D Materials and Applications · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
Show source-provided references
1. Moore, G. E. Cramming more components onto integrated circuits. Proc. IEEE 86, 82 (1998).10.1109/JPROC.1998.658762 ↗
2. Bohr, M. The evolution of scaling from the homogeneous era to the heterogeneous era. Proc. IEEE IEDM 1.1.1–1.1.6, doi:10.1109/IEDM.2011.6131469 (2011).10.1109/IEDM.2011.6131469 ↗
3. Ionescu, A. M. & Riel, H. Tunnel field-effect transistors as energy efficient electronic switches. Nature 479, 329–337 (2011).10.1038/nature10679 ↗
4. Salahuddin, S. & Datta, S. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett. 8, 405–410 (2008).10.1021/nl071804g ↗
5. Rusu, A., Salvatore, G. A., Jimnez, D. & Ionescu, A. M. Metal-ferroelectric-metal-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification. Proc. IEEE IEDM 16.3.1–16.3.4, doi:10.1109/IEDM.2010.5703374 (2010).10.1109/IEDM.2010.5703374 ↗
6. Khan, A. I. et al. Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures. Appl. Phys. Lett. 99, 113501 (2011).10.1063/1.3634072 ↗
7. Salvatore, G. A., Rusu, A. & Ionescu, A. M. Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor. Appl. Phys. Lett. 100, 163504 (2012).10.1063/1.4704179 ↗
8. Then, H. W. et al. Experimental observation and physics of negative capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate. Proc. IEEE IEDM 28.3.1–28.3.4, doi:10.1109/IEDM.2013.6724709 (2013).10.1109/IEDM.2013.6724709 ↗
9. Jain, A. & Alam, M. A. Stability constraints define the minimum subthreshold swing of a negative capacitance field-effect transistor. IEEE Trans. Electron Devices 61, 2235–2242 (2014).10.1109/TED.2014.2316167 ↗
10. Masuduzzaman, M. & Alam, M. A. Effective nanometer airgap of NEMS devices using negative capacitance of ferroelectric materials. Nano Lett. 14, 3160–3165 (2014).10.1021/nl5004416 ↗
11. Appleby, D. J. R. et al. Experimental observation of negative capacitance in ferroelectrics at room temperature. Nano Lett. 14, 3864–3868 (2014).10.1021/nl5017255 ↗
12. Khan, A. I. et al. Negative capacitance in a ferroelectric capacitor. Nat. Mater. 7, 182–186 (2015).10.1038/nmat4148 ↗
13. Khan, A. I. et al. Negative capacitance in short-channel FinFETs externally connected to an epitaxial ferroelectric capacitor. IEEE Electron Device Lett. 37, 111–114 (2016).10.1109/LED.2015.2501319 ↗
14. Akinwande, D., Petrone, N. & Hone, J. Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5678 (2014).10.1038/ncomms6678 ↗
15. Li, L. K. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014).10.1038/nnano.2014.35 ↗
16. Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014).10.1021/nn501226z ↗
17. Koenig, S. P., Doganov, R. A., Schmidt, H., Neto, A. H. C. & Özyilmaz, B. Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett. 104, 103106 (2014).10.1063/1.4868132 ↗
18. Xia, F. N., Wang, H. & Jia, Y. Rediscovering black phosphorus: A unique anisotropic 2D material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014).10.1038/ncomms5458 ↗
19. Lam, K.-T., Dong, Z. & Guo, J. Performance limits projection of black phosphorous field-effect transistors. IEEE Electron Device Lett. 9, 963–965 (2014).10.1109/LED.2014.2333368 ↗
20. Liu, F., Wang, Y. J., Liu, X. Y., Wang, J. & Guo, H. Ballistic transport in monolayer black phosphorus transistors. IEEE Trans. Electron Devices 11, 3871–3876 (2014).10.1109/TED.2014.2353213 ↗
21. International Technology Roadmap for Semiconductors. http://www.itrs2.net/2013-itrs.html (2013).
22. Rabe, K. M., Ahn, C. H. & Triscone, J. M. Topics in Applied Physics (Springer, 2007).
23. Zhou, Y. Tunneling magnetoresistance modulation in a magnetic tunnel junction with a ferroelectric barrier. Nanotechnology 22, 085202 (2011).10.1088/0957-4484/22/8/085202 ↗
24. Zou, Y. Y., Chew, K. H. & Zhou, Y. Dynamic control of tunneling conductance in ferroelectric tunnel junctions. Chinese Phys. Lett. 30, 107701 (2013).10.1088/0256-307X/30/10/107701 ↗
25. Zhou, Y., Chan, H. K., Lam, C. H. & Shin, F. G. Mechanisms of imprint effect on ferroelectric thin films. J. Appl. Phys. 98, 024111 (2005).10.1063/1.1984075 ↗
26. Tyunina, M. & Levoska, J. Application of the interface capacitance model to thin-film relaxors and ferroelectrics. Appl. Phys. Lett. 88, 262904 (2006).10.1063/1.2218321 ↗
27. Wood, J. D. et al. Effective passivation of exfoliated black phosphorus transistors against ambient degradation. Nano Lett. 14, 6964 (2014).10.1021/nl5032293 ↗
28. Tayari, V. et al. Two-dimensional magnetotransport in a black phosphorus naked quantum well. Nat. Commun. 6, 7702 (2015).10.1038/ncomms8702 ↗
29. Doganov, R. A. et al. Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere. Nat. Commun. 6, 6647 (2015).10.1038/ncomms7647 ↗
30. Liu, F., Shi, Q., Wang, J. & Guo, H. Device performance simulations of multilayer black phosphorus tunneling transistors. Appl. Phys. Lett. 107, 203501 (2015).10.1063/1.4935752 ↗
31. Shi, Q., Guo, H. & Liu, F. Dielectric material for monolayer black phosphorus transistors: a first-principles investigation. Proc. IEEE SISPAD 56–59, doi:10.1109/SISPAD.2015.7292257 (2015).10.1109/SISPAD.2015.7292257 ↗
32. Lin, C. I., Khan, A. I., Salahuddin, S. & Hu, C. Effects of the variation of ferroelectric properties on negative capacitance FET characteristics. IEEE Trans. Electron Devices 63, 2197 (2016).10.1109/TED.2016.2514783 ↗
33. Rudenko, A. N. & Katsnelson, M. I. Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus. Phys. Rev. B 89, 201408 (2014).10.1103/PhysRevB.89.201408 ↗