Sub-1V, flexible, all-polymer complementary logic circuits based on electrolyte-gated transistors
Source abstract
Abstract
Electrolyte-gated transistors (EGTs) are typically limited to p-type operation, with stable n-type devices remaining scarce. In this study, we demonstrate high-performance n-type EGTs using a poly(benzimidazobenzophenanthroline) (BBL) polymer semiconductor gated by ionogel electrolytes. Electrochemical doping in BBL induces ion pathways in amorphous regions during initial doping, facilitating efficient electron transport. This yields exceptional device performance, including a geometry-normalized transconductance of 4.6 S cm−1, an ON/OFF ratio of ≈105, a product of electron mobility and volumetric capacitance (μC* ≈ 16.4 F cm–1 V–1 s–1), and minimal hysteresis (<0.1 V). These features surpass most reported n-type EGTs, demonstrating the importance of ion-driven electrochemical doping in BBL. Furthermore, we not only fabricate all-polymer complementary inverters, NAND, and NOR gates but also demonstrate flexible circuits by integrating n-type BBL and p-type polythiophene EGTs.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Conducting polymers and applications · Organic Electronics and Photovoltaics · Supercapacitor Materials and Fabrication
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (65)
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