Model representation in amorphous metal oxide thin-film transistors: a critical review
Source abstract
Abstract
This review examines modeling methodologies for amorphous metal oxide thin-film transistors (a-MO TFTs). It covers underlying device physics, charge transport mechanisms including multiple trapping and release, surface potential, mobility, drain current, and capacitance models, alongside bias, temperature, and mechanical stress effects. Comparisons of compact models highlight trade-offs in accuracy, parameter extraction, and circuit-level validation. Future directions emphasize machine learning integration, unified multi-material frameworks, and strain-aware simulations.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Advanced Sensor and Energy Harvesting Materials · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
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