Giant elasto-optic response of gallium selenide on flexible mica
Source abstract
Abstract
Abstract Understanding the bending behaviour of a crystal onto a flexible platform is crucial for flexible electronics. The Young’s modulus, a measure of how easily a material deforms, plays a critical role in the coupled deformation of a crystal on a flexible substrate, as well as the transfer of strain from the substrate onto the layer. Here, we report on the bending behaviour of gallium selenide (GaSe), a van der Waals semiconductor with a small Young’s modulus and strain-dependent electronic band structure. A controllable, reproducible uniaxial strain, ϵ, is applied to nanometer-thick GaSe layers via their bending on a mica substrate. The spectral shift ΔE of the room temperature photoluminescence emission with increasing strain has a large associated strain coefficient ΔE/ϵ. This is accompanied by coupled electronic and vibrational states under strain-induced resonant excitation conditions, as probed by Raman spectroscopy.
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Research context
OpenAlex topics: 2D Materials and Applications · Optical and Acousto-Optic Technologies · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (44)
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