Integration of resonant band with asymmetry in ferroelectric tunnel junctions
Source abstract
Abstract
Abstract We propose that the asymmetry-induced tunneling electroresistance (TER) effect in a ferroelectric tunnel junction (FTJ) could be improved by integrating a polarization-controlled resonant band. Using first-principles calculations and a quantum-mechanical tunneling model, we studied an asymmetric FTJ SrRuO3/BaTiO3/SrTiO3/SrRuO3. The resonant band is integrated into this FTJ by two atomic layers of BaSnO3embedded in the barrier. In the elaborated FTJ SrRuO3/BaTiO3/BaSnO3/SrTiO3/SrRuO3, both resonant band and asymmetry work together. For one polarization direction, the BaSnO3and SrTiO3dielectric layers work together as barriers to provide considerable efficient barrier height for direct tunneling and lead to large tunneling resistance. For the opposite polarization, the BaSnO3layer serves as a quantum well to induce resonant tunneling across the barrier and considerably reduces the tunneling resistance of the ON state. The integration of resonant band with asymmetry may provide a more efficient and applicable way to further improve the functionalities of FTJs.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Multiferroics and related materials
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References (30)
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