Dipolar spin relaxation of divacancy qubits in silicon carbide
Source abstract
Abstract
Abstract Divacancy spins implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of these important defects, for instance, spin relaxation has not been thoroughly studied yet. Here, we carry out a theoretical study on environmental spin-induced spin relaxation processes of divacancy qubits in the 4H polytype of silicon carbide (4H-SiC). We reveal all the relevant magnetic field values where the longitudinal spin relaxation time T1 drops resonantly due to the coupling to either nuclear spins or electron spins. We quantitatively analyze the dependence of the T1 time on the concentration of point defect spins and the applied magnetic field and provide an analytical expression. We demonstrate that dipolar spin relaxation plays a significant role both in as-grown and ion-implanted samples and it often limits the coherence time of divacancy qubits in 4H-SiC.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Semiconductor materials and devices · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (75)
Show source-provided references
1. du Preez, L. Electron paramagnetic resonance and optical investigations of defect centres in diamond. Ph.D. thesis, University of Witwatersrand (1965).
2. Wrachtrup, J. & Jelezko, F. Processing quantum information in diamond. J. Condens. Matter Phys. 18, S807–S824 (2006).10.1088/0953-8984/18/21/S08 ↗
3. Maze, J. R. et al. Properties of nitrogen-vacancy centers in diamond: the group theoretic approach. New J. Phys. 13, 025025 (2011).10.1088/1367-2630/13/2/025025 ↗
4. Doherty, M. W. et al. The nitrogen-vacancy colour centre in diamond. Phys. Rep. 528, 1–45 (2013).10.1016/j.physrep.2013.02.001 ↗
5. Balasubramanian, G. et al. Nanoscale imaging magnetometry with diamond spins under ambient conditions. Nature 455, 648–651 (2008).10.1038/nature07278 ↗
6. Taylor, J. et al. High-sensitivity diamond magnetometer with nanoscale resolution. Nat. Phys. 4, 810–816 (2008).10.1038/nphys1075 ↗
7. Kucsko, G. et al. Nanometre-scale thermometry in a living cell. Nature 500, 54–58 (2013).10.1038/nature12373 ↗
8. Plakhotnik, T., Doherty, M. W., Cole, J. H., Chapman, R. & Manson, N. B. All-optical thermometry and thermal properties of the optically detected spin resonances of the NV- center in nanodiamond. Nano Lett. 14, 4989–4996 (2014).10.1021/nl501841d ↗
9. Schirhagl, R., Chang, K., Loretz, M. & Degen, C. L. Nitrogen-vacancy centers in diamond: nanoscale sensors for physics and biology. Annu. Rev. Phys. Chem. 65, 83–105 (2014).10.1146/annurev-physchem-040513-103659 ↗
10. Degen, C. L., Reinhard, F. & Cappellaro, P. Quantum sensing. Rev. Mod. Phys. 89, 035002 (2017).10.1103/RevModPhys.89.035002 ↗
11. Glenn, D. R. et al. High-resolution magnetic resonance spectroscopy using a solid-state spin sensor. Nature 555, 351–354 (2018).10.1038/nature25781 ↗
12. Schmitt, S. et al. Submillihertz magnetic spectroscopy performed with a nanoscale quantum sensor. Science 356, 832–837 (2017).10.1126/science.aam5532 ↗
13. Bernien, H. et al. Heralded entanglement between solid-state qubits separated by three metres. Nature 497, 86–90 (2013).10.1038/nature12016 ↗
14. Pfaff, W. et al. Unconditional quantum teleportation between distant solid-state quantum bits. Science 345, 532–535 (2014).10.1126/science.1253512 ↗
15. Wehner, S., Elkouss, D. & Hanson, R. Quantum internet: a vision for the road ahead. Science 362, eaam9288 (2018).10.1126/science.aam9288 ↗
16. Weber, J. R. et al. Quantum computing with defects. Proc. Natl Acad. Sci. USA 107, 8513–8518 (2010).10.1073/pnas.1003052107 ↗
17. Kurizki, G. et al. Quantum technologies with hybrid systems. Proc. Natl Acad. Sci. USA 112, 3866–3873 (2015).10.1073/pnas.1419326112 ↗
18. Zhang, J., Hegde, S. S. & Suter, D. Efficient implementation of a quantum algorithm in a single nitrogen-vacancy center of diamond. Phys. Rev. Lett. 125, 030501 (2020).10.1103/PhysRevLett.125.030501 ↗
19. Koehl, W. F., Buckley, B. B., Heremans, F. J., Calusine, G. & Awschalom, D. D. Room temperature coherent control of defect spin qubits in silicon carbide. Nature 479, 84 (2011).10.1038/nature10562 ↗
20. Christle, D. J. et al. Isolated electron spins in silicon carbide with millisecond coherence times. Nat. Mater. 14, 160–163 (2015).10.1038/nmat4144 ↗
21. Son, N. T. et al. Divacancy in 4H-SiC. Phys. Rev. Lett. 96, 055501 (2006).10.1103/PhysRevLett.96.055501 ↗
22. Soltamov, V. A., Soltamova, A. A., Baranov, P. G. & Proskuryakov, I. I. Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC. Phys. Rev. Lett. 108, 226402 (2012).10.1103/PhysRevLett.108.226402 ↗
23. Widmann, M. et al. Coherent control of single spins in silicon carbide at room temperature. Nat. Mater. 14, 164–168 (2015).10.1038/nmat4145 ↗
24. Miao, K. C. et al. Universal coherence protection in a solid-state spin qubit. Science 369, 1493–1497 (2020).10.1126/science.abc5186 ↗
25. Christle, D. J. et al. Isolated spin qubits in sic with a high-fidelity infrared spin-to-photon interface. Phys. Rev. X 7, 021046 (2017).
26. Falk, A. L. et al. Optical polarization of nuclear spins in silicon carbide. Phys. Rev. Lett. 114, 247603 (2015).10.1103/PhysRevLett.114.247603 ↗
27. Bourassa, A. et al. Entanglement and control of single nuclear spins in isotopically engineered silicon carbide. Nat. Mater. 19, 1319–1325 (2020).10.1038/s41563-020-00802-6 ↗
28. Ivády, V. et al. Theoretical model of dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide. Phys. Rev. B 92, 115206 (2015).10.1103/PhysRevB.92.115206 ↗
29. Ivády, V. et al. High-fidelity bidirectional nuclear qubit initialization in sic. Phys. Rev. Lett. 117, 220503 (2016).10.1103/PhysRevLett.117.220503 ↗
30. Li, Q. et al. Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast. Natl. Sci. Rev (in the press).
31. Whiteley, S. J. et al. Spin-phonon interactions in silicon carbide addressed by Gaussian acoustics. Nat. Phys. 15, 490–495 (2019).10.1038/s41567-019-0420-0 ↗
32. Anderson, C. P. et al. Electrical and optical control of single spins integrated in scalable semiconductor devices. Science 366, 1225–1230 (2019).10.1126/science.aax9406 ↗
33. Son, N. T. et al. Developing silicon carbide for quantum spintronics. Appl. Phys. Lett. 116, 190501 (2020).10.1063/5.0004454 ↗
34. Pham, L. M. et al. Enhanced solid-state multispin metrology using dynamical decoupling. Phys. Rev. B 86, 045214 (2012).10.1103/PhysRevB.86.045214 ↗
35. Bar-Gill, N., Pham, L. M., Jarmola, A., Budker, D. & Walsworth, R. L. Solid-state electronic spin coherence time approaching one second. Nat. Commun. 4, 1743 (2013).10.1038/ncomms2771 ↗
36. Romach, Y. et al. Spectroscopy of surface-induced noise using shallow spins in diamond. Phys. Rev. Lett. 114, 017601 (2015).10.1103/PhysRevLett.114.017601 ↗
37. Barry, J. F. et al. Sensitivity optimization for NV-diamond magnetometry. Rev. Mod. Phys. 92, 015004 (2020).10.1103/RevModPhys.92.015004 ↗
38. Takahashi, S., Hanson, R., van Tol, J., Sherwin, M. S. & Awschalom, D. D. Quenching spin decoherence in diamond through spin bath polarization. Phys. Rev. Lett. 101, 047601 (2008).10.1103/PhysRevLett.101.047601 ↗
39. Jarmola, A., Acosta, V. M., Jensen, K., Chemerisov, S. & Budker, D. Temperature- and magnetic-field-dependent longitudinal spin relaxation in nitrogen-vacancy ensembles in diamond. Phys. Rev. Lett. 108, 197601 (2012).10.1103/PhysRevLett.108.197601 ↗
40. Wang, H.-J. et al. Optically detected cross-relaxation spectroscopy of electron spins in diamond. Nat. Commun. 5, 4135 (2014).10.1038/ncomms5135 ↗
41. Wickenbrock, A. et al. Microwave-free magnetometry with nitrogen-vacancy centers in diamond. Appl. Phys. Lett. 109, 053505 (2016).10.1063/1.4960171 ↗
42. Wood, J. D. A. et al. Wide-band nanoscale magnetic resonance spectroscopy using quantum relaxation of a single spin in diamond. Phys. Rev. B 94, 155402 (2016).10.1103/PhysRevB.94.155402 ↗
43. Wood, J. D. A. et al. Microwave-free nuclear magnetic resonance at molecular scales. Nat. Commun. 8, 15950 (2017).10.1038/ncomms15950 ↗
44. Ivády, V. et al. Photoluminescence at the ground-state level anticrossing of the nitrogen-vacancy center in diamond: a comprehensive study. Phys. Rev. B 103, 035307 (2021).10.1103/PhysRevB.103.035307 ↗
45. Koehl, W. F., Buckley, B. B., Heremans, F. J., Calusine, G. & Awschalom, D. D. Room temperature coherent control of defect spin qubits in silicon carbide. Nature 479, 84–87 (2011).10.1038/nature10562 ↗
46. Falk, A. L. et al. Polytype control of spin qubits in silicon carbide. Nat. Commun. 4, 1819 (2013).10.1038/ncomms2854 ↗
47. Yan, F.-F. et al. Room-temperature coherent control of implanted defect spins in silicon carbide. npj Quantum Inf. 6, 1–6 (2020).10.1038/s41534-020-0270-8 ↗
48. Yang, W. & Liu, R.-B. Quantum many-body theory of qubit decoherence in a finite-size spin bath. Phys. Rev. B 78, 085315 (2008).10.1103/PhysRevB.78.085315 ↗
49. Seo, H. et al. Quantum decoherence dynamics of divacancy spins in silicon carbide. Nat. Commun. 7, 12935 (2016).10.1038/ncomms12935 ↗
50. Onizhuk, M. et al. Probing the coherence of solid-state qubits at avoided crossings. PRX Quantum 2, 010311 (2021).10.1103/PRXQuantum.2.010311 ↗
51. Shrivastava, K. N. Theory of spin-lattice relaxation. Phys. Status Solidi B 117, 437–458 (1983).10.1002/pssb.2221170202 ↗
52. Norambuena, A. et al. Spin-lattice relaxation of individual solid-state spins. Phys. Rev. B 97, 094304 (2018).10.1103/PhysRevB.97.094304 ↗
53. Radczyk, T., Hoffmann, S. & Goslar, J. Applications of the transport integrals in solid-state physics and in electron spin relaxation. Acta Phys. Pol. A 5, 469–477 (2003).10.12693/APhysPolA.104.469 ↗
54. Hoffmann, S. K. & Lijewski, S. Raman electron spin-lattice relaxation with the Debye-type and with real phonon spectra in crystals. J. Magn. Reson. 227, 51–56 (2013).10.1016/j.jmr.2012.11.026 ↗
55. Redman, D. A., Brown, S., Sands, R. H. & Rand, S. C. Spin dynamics and electronic states of N-V centers in diamond by EPR and four-wave-mixing spectroscopy. Phys. Rev. Lett. 67, 3420–3423 (1991).10.1103/PhysRevLett.67.3420 ↗
56. Simin, D. et al. Locking of electron spin coherence above 20 ms in natural silicon carbide. Phys. Rev. B 95, 161201 (2017).10.1103/PhysRevB.95.161201 ↗
57. Soltamov, V. A. et al. Relaxation processes and high-field coherent spin manipulation in color center ensembles in 6H-SiC. Phys. Rev. B 103, 195201 (2021).10.1103/PhysRevB.103.195201 ↗
58. Lin, W.-X. et al. Temperature dependence of divacancy spin coherence in implanted silicon carbide. Phys. Rev. B 104, 125305 (2021).10.1103/PhysRevB.104.125305 ↗
59. Restrepo, O. D. & Windl, W. Full first-principles theory of spin relaxation in group-IV materials. Phys. Rev. Lett. 109, 166604 (2012).10.1103/PhysRevLett.109.166604 ↗
60. Gugler, J. et al. Ab initio calculation of the spin lattice relaxation time T1 for nitrogen-vacancy centers in diamond. Phys. Rev. B 98, 214442 (2018).10.1103/PhysRevB.98.214442 ↗
61. Astner, T. et al. Solid-state electron spin lifetime limited by phononic vacuum modes. Nat. Mater. 17, 313–317 (2018).10.1038/s41563-017-0008-y ↗
62. Park, J., Zhou, J.-J. & Bernardi, M. Spin-phonon relaxation times in centrosymmetric materials from first principles. Phys. Rev. B 101, 045202 (2020).10.1103/PhysRevB.101.045202 ↗
63. Xu, J. et al. Spin-phonon relaxation from a universal ab initio density-matrix approach. Nat. Commun. 11, 2780 (2020).10.1038/s41467-020-16063-5 ↗
64. Ivády, V. Longitudinal spin relaxation model applied to point-defect qubit systems. Phys. Rev. B 101, 155203 (2020).10.1103/PhysRevB.101.155203 ↗
65. Kawanishi, S. & Mizoguchi, T. Effect of van der Waals interactions on the stability of SiC polytypes. J. Appl. Phys. 119, 175101 (2016).10.1063/1.4948329 ↗
66. Davidsson, J. et al. First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H-SiC. New J. Phys. 20, 023035 (2018).10.1088/1367-2630/aaa752 ↗
67. Magnusson, B. et al. Excitation properties of the divacancy in 4H-SiC. Phys. Rev. B 98, 195202 (2018).10.1103/PhysRevB.98.195202 ↗
68. Ivády, V. et al. Stabilization of point-defect spin qubits by quantum wells. Nat. Commun. 10, 5607 (2019).10.1038/s41467-019-13495-6 ↗
69. Nagy, R. et al. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide. Nat. Commun. 10, 1954 (2019).10.1038/s41467-019-09873-9 ↗
70. Kasper, C. et al. Influence of irradiation on defect spin coherence in silicon carbide. Phys. Rev. Appl. 13, 044054 (2020).10.1103/PhysRevApplied.13.044054 ↗
71. Son, N. T., Carlsson, P., ul Hassan, J., Magnusson, B. & Janzén, E. Defects and carrier compensation in semi-insulating 4h − SiC substrates. Phys. Rev. B 75, 155204 (2007).10.1103/PhysRevB.75.155204 ↗
72. Greulich-Weber, S. EPR and ENDOR investigations of shallow impurities in SiC polytypes. Phys. Status Solidi A 162, 95–151 (1997).10.1002/1521-396X(199707)162:1<95::AID-PSSA95>3.0.CO;2-X ↗
73. Kuate Defo, R. et al. Energetics and kinetics of vacancy defects in 4H-SiC. Phys. Rev. B 98, 104103 (2018).10.1103/PhysRevB.98.104103 ↗
74. Ivády, V. et al. Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide. Phys. Rev. B 96, 161114 (2017).10.1103/PhysRevB.96.161114 ↗
75. Simin, D. et al. All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide. Phys. Rev. X 6, 031014 (2016).