journal article·2023-05-30Open access

Bound excitons and bandgap engineering in violet phosphorus

Zhenyu Sun, Zhihao Cai, Peng Cheng, Lan Chen, Xuewen Zhao, Jinying Zhang, Kehui Wu, Baojie Feng

Abstract

Abstract Violet phosphorus (VP), the most stable phosphorus allotrope, is a van der Waals semiconductor that can be used to construct p-type nanodevices. Recently, high-quality VP crystals have been synthesized while a deep insight into their excitonic properties and bandgap tailoring approaches, which are crucial for their optoelectronic device applications, is still lacking. Here, we study the optical properties of ultrathin VP by second harmonic generation, photoluminescence, and optical absorption spectroscopy. We observed strong bound exciton emission that is 0.48 eV away from the free exciton emission, which is among the largest in 2D materials. In addition, the bandgaps of VP are highly sensitive to the number of layers and external strain, which provides convenient approaches for bandgap engineering. The strong bound exciton emission and tunable bandgaps make VP a promising material in optoelectronic devices.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (45)

Show source-provided references
1. Liu, C. et al. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 15, 545–557 (2020).10.1038/s41565-020-0724-3 ↗
2. Huang, X., Liu, C. & Zhou, P. 2D semiconductors for specific electronic applications: from device to system. npj 2D Mater. Appl. 6, 51 (2022).10.1038/s41699-022-00327-3 ↗
3. Kang, S. et al. 2D semiconducting materials for electronic and optoelectronic applications: potential and challenge. 2D Mater. 7, 022003 (2020).10.1088/2053-1583/ab6267 ↗
4. Liang, G. et al. Mid-infrared photonics and optoelectronics in 2D materials. Mater. Today 51, 294–316 (2021).10.1016/j.mattod.2021.09.021 ↗
5. Ping, Y. et al. Polarization sensitive solar-blind ultraviolet photodetectors based on ultrawide bandgap KNb3O8 nanobelt with fringe-like atomic lattice. Adv. Func. Mater. 32, 2111673 (2022).10.1002/adfm.202111673 ↗
6. Schusteritsch, G., Uhrin, M. & Pickard, C. J. Single-layered Hittorf’s phosphorus: a wide-bandgap high mobility 2D material. Nano Lett 16, 2975–2980 (2016).10.1021/acs.nanolett.5b05068 ↗
7. Zhang, L. et al. High yield synthesis of violet phosphorus crystals. Chem. Mater. 32, 7363–7369 (2020).10.1021/acs.chemmater.0c02273 ↗
8. Zhang, L. et al. Structure and properties of violet phosphorus and its phosphorene exfoliation. Angew. Chem. 132, 1090–1096 (2020).10.1002/ange.201912761 ↗
9. Lin, S. et al. Liquid‐phase exfoliation of violet phosphorus for electronic applications. SmartMat 2, 226–233 (2021).10.1002/smm2.1037 ↗
10. Li, Y. et al. Impurity-induced robust trionic effect in layered violet phosphorus. Adv. Opt. Mater. 10, 2101538 (2022).10.1002/adom.202101538 ↗
11. Zhang, L. et al. Fast identification of the crystallographic orientation of violet phosphorus nanoflakes with preferred in-plane cleavage edge orientation. Adv. Func. Mater. 32, 2111057 (2022).10.1002/adfm.202111057 ↗
12. Ricciardulli, A. G., Wang, Y., Yang, S. & Samorì, P. Two-dimensional violet phosphorus: a p-type semiconductor for (opto)electronics. J. Am. Chem. Soc. 144, 3660–3666 (2022).10.1021/jacs.1c12931 ↗
13. Butler, S. Z. et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7, 2898–2926 (2013).10.1021/nn400280c ↗
14. Wang, D., Li, X. B., Han, D., Tian, W. Q. & Sun, H. B. Engineering two-dimensional electronics by semiconductor defects. Nano Today 16, 30–45 (2017).10.1016/j.nantod.2017.07.001 ↗
15. He, Y. M. et al. Single quantum emitters in monolayer semiconductors. Nat. Nanotechnol. 10, 497–502 (2015).10.1038/nnano.2015.75 ↗
16. Xu, X. et al. Localized state effect and exciton dynamics for monolayer WS2. Opt. Express 29, 5856 (2021).10.1364/OE.415176 ↗
17. Aghajanian, M. et al. Resonant and bound states of charged defects in two-dimensional semiconductors. Phys. Rev. B 101, 081201 (2020).10.1103/PhysRevB.101.081201 ↗
18. Chaves, A. et al. Bandgap engineering of two-dimensional semiconductor materials. npj 2D Mater. Appl 4, 29 (2020).10.1038/s41699-020-00162-4 ↗
19. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett 10, 1271–1275 (2010).10.1021/nl903868w ↗
20. Bandurin, D. A. et al. High electron mobility, quantum hall effect and anomalous optical response in atomically thin InSe. Nat. Nanotechnol. 12, 223–227 (2017).10.1038/nnano.2016.242 ↗
21. Li, L. et al. Direct observation of the layer-dependent electronic structure in phosphorene. Nat. Nanotechnol. 12, 21–25 (2017).10.1038/nnano.2016.171 ↗
22. He, K., Poole, C., Mak, K. F. & Shan, J. Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2. Nano Lett 13, 2931–2936 (2013).10.1021/nl4013166 ↗
23. Li, Z. et al. Efficient strain modulation of 2D materials via polymer encapsulation. Nat. Commun. 11, 1151 (2020).10.1038/s41467-020-15023-3 ↗
24. Zhang, L. et al. Phonon properties of bulk violet phosphorus single crystals: temperature and pressure evolution. ACS Appl. Electron. Mater. 3, 1043–1049 (2021).10.1021/acsaelm.0c00731 ↗
25. Wang, F. et al. Honeycomb RhI3 flakes with high environmental stability for optoelectronics. Adv. Mater. 32, 2001979 (2020).10.1002/adma.202001979 ↗
26. Shi, J. et al. 3R MoS2 with broken inversion symmetry: a promising ultrathin nonlinear optical device. Adv. Mater. 29, 1701486 (2017).10.1002/adma.201701486 ↗
27. Zhang, S. et al. Defect structure of localized excitons in a WSe2 monolayer. Phys. Rev. Lett. 119, 046101 (2017).10.1103/PhysRevLett.119.046101 ↗
28. Shi, J. et al. Identification of high-temperature exciton states and their phase-dependent trapping behaviour in lead halide perovskites. Energy Environ. Sci. 11, 1460–1469 (2018).10.1039/C7EE03543H ↗
29. Saigal, N. & Ghosh, S. Evidence for two distinct defect related luminescence features in monolayer MoS2. Appl. Phys. Lett. 109, 122105 (2016).10.1063/1.4963133 ↗
30. Wei, C. et al. Bound exciton and free exciton states in GaSe thin slab. Sci. Rep. 6, 33890 (2016).10.1038/srep33890 ↗
31. Darlington, T. P. et al. Imaging strain-localized excitons in nanoscale bubbles of monolayer WSe2 at room temperature. Nat. Nanotechnol. 15, 854–860 (2020).10.1038/s41565-020-0730-5 ↗
32. Chowdhury, T. et al. Anomalous room-temperature photoluminescence from nanostrained MoSe2 monolayers. ACS Photonics 8, 2220–2226 (2021).10.1021/acsphotonics.1c00640 ↗
33. Shabani, S. et al. Ultralocalized optoelectronic properties of nanobubbles in 2D semiconductors. Nano Lett. 22, 7401–7407 (2022).10.1021/acs.nanolett.2c02265 ↗
34. Kim, G. et al. High-density, localized quantum emitters in strained 2D semiconductors. ACS Nano 16, 9651–9659 (2022).10.1021/acsnano.2c02974 ↗
35. Schmidt, T., Lischka, K. & Zulehner, W. Excitation-power dependence of the near-band-edge photoluminescence of semiconductors. Phys. Rev. B 45, 8989–8994 (1992).10.1103/PhysRevB.45.8989 ↗
36. Greben, K., Arora, S., Harats, M. G. & Bolotin, K. I. Intrinsic and extrinsic defect-related excitons in TMDCs. Nano Lett. 20, 2544–2550 (2020).10.1021/acs.nanolett.9b05323 ↗
37. Yan, T., Qiao, X., Liu, X., Tan, P. & Zhang, X. Photoluminescence properties and exciton dynamics in monolayer WSe2. Appl. Phys. Lett. 105, 101901 (2014).10.1063/1.4895471 ↗
38. Wu, Z. et al. Defects as a factor limiting carrier mobility in WSe2: a spectroscopic investigation. Nano Res. 9, 3622–3631 (2016).10.1007/s12274-016-1232-5 ↗
39. Wu, Z. et al. Defect activated photoluminescence in WSe2 monolayer. J. Phys. Chem. C 121, 12294–12299 (2017).10.1021/acs.jpcc.7b03585 ↗
40. Mak, K. F. et al. Measurement of the optical conductivity of graphene. Phys. Rev. Lett. 101, 196405 (2008).10.1103/PhysRevLett.101.196405 ↗
41. Tauc, J., Grigorovici, R. & Vancu, A. Optical properties and electronic structure of amorphous germanium. Phys. Status Solidi B 15, 627–637 (1966).10.1002/pssb.19660150224 ↗
42. Aslan, O. B., Deng, M. & Heinz, T. F. Strain tuning of excitons in monolayer WSe2. Phys. Rev. B 98, 115308 (2018).10.1103/PhysRevB.98.115308 ↗
43. Zhang, J. et al. Giant bandgap engineering in two-dimensional ferroelectric α-In2Se3. J. Phys. Chem. Lett. 13, 3261–3268 (2022).10.1021/acs.jpclett.2c00618 ↗
44. Wang, F. et al. Anisotropic infrared response and orientation-dependent strain-tuning of the electronic structure in Nb2SiTe4. ACS Nano 16, 8107–8115 (2022).10.1021/acsnano.2c01254 ↗
45. Spirito, D. et al. Tailoring photoluminescence by strain-engineering in layered perovskite flakes. Nano Lett. 22, 4153–4160 (2022).10.1021/acs.nanolett.2c00909 ↗