Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion
Source abstract
Abstract
Abstract Atomically thin GaSe has been predicted to have a non-parabolic, Mexican hat-like valence band structure due to the shift of the valence band maximum (VBM) near the Γ point which is expected to give rise to novel, unique properties such as tunable magnetism, high effective mass suppressing direct tunneling in scaled transistors, and an improved thermoelectric figure of merit. However, the synthesis of atomically thin GaSe remains challenging. Here, we report on the growth of atomically thin GaSe by molecular beam epitaxy (MBE) and demonstrate the high quality of the resulting van der Waals epitaxial films. The full valence band structure of nominal bilayer GaSe is revealed by photoemission electron momentum microscopy (k-PEEM), confirming the presence of a distorted valence band near the Γ point. Our results open the way to demonstrating interesting new physical phenomena based on MBE-grown GaSe films and atomically thin monochalcogenides in general.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Topological Materials and Phenomena · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (36)
Show source-provided references
1. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).10.1038/nnano.2010.279 ↗
2. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).10.1038/nnano.2012.193 ↗
3. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013).10.1038/nchem.1589 ↗
4. Zhou, X. et al. Strong second-harmonic generation in atomic layered GaSe. J. Am. Chem. Soc. 137, 7994–7997 (2015).10.1021/jacs.5b04305 ↗
5. Zhou, Y. et al. Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets. ACS Nano 8, 1485–1490 (2014).10.1021/nn405529r ↗
6. Ma, Y., Dai, Y., Guo, M., Yu, L. & Huang, B. Tunable electronic and dielectric behavior of GaS and GaSe monolayers. Phys. Chem. Chem. Phys. 15, 7098–7105 (2013).10.1039/c3cp50233c ↗
7. Cao, T., Li, Z. & Louie, S. G. Tunable magnetism and half-metallicity in hole-doped monolayer GaSe. Phys. Rev. Lett. 114, 236602 (2015).10.1103/PhysRevLett.114.236602 ↗
8. Li, X. et al. Controlled vapor phase growth of single crystalline, two-dimensional GaSecrystals with high photoresponse. Sci. Rep. 4, 5497 (2014).10.1038/srep05497 ↗
9. Rybkovskiy, D. V., Osadchy, A. V. & Obraztsova, E. D. Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe. Phys. Rev. B 90, 235302 (2014).10.1103/PhysRevB.90.235302 ↗
10. Wu, S. et al. Magnetisms in p-type monolayer gallium chalcogenides (GaSe, GaS). arXiv:1409.4733 [cond-mat] (2014).
11. Wickramaratne, D., Zahid, F. & Lake, R. K. Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands. J. Appl. Phys. 118, 075101 (2015).10.1063/1.4928559 ↗
12. Kuc, A. et al. High-performance 2D p-type transistors based on GaSe Layers: an Ab Initio study. Adv. Electron. Mater. 3, 1600399 (2017).10.1002/aelm.201600399 ↗
13. Vinh, L. T., Eddrief, M., Sébenne, C., Sacuto, A. & Balkanski, M. Heteroepitaxy of GaSe layered semiconductor compound on Si(111) 7 × 7 substrate: a Van der Waals epitaxy? J. Cryst. Growth 135, 1–10 (1994).10.1016/0022-0248(94)90719-6 ↗
14. Ueno, K., Abe, H., Saiki, K. & Koma, A. Heteroepitaxy of layered semiconductor GaSe on a GaAs(111)B surface. Jpn J. Appl. Phys. 30, L1352 (1991).10.1143/JJAP.30.L1352 ↗
15. Ueno, K., Takeda, N., Sasaki, K. & Koma, A. Investigation of the growth mechanism of layered semiconductor GaSe. Appl. Surf. Sci. 113–114, 38–42 (1997).10.1016/S0169-4332(96)00837-9 ↗
16. Zheng, Y. et al. GaSeSi(111) heteroepitaxy: the early stages of growth. J. Cryst. Growth 162, 135–141 (1996).10.1016/0022-0248(95)00952-3 ↗
17. Ben Aziza, Z. et al. van der Waals Epitaxy of GaSe/graphene heterostructure: electronic and interfacial properties. ACS Nano 10, 9679–9686 (2016).10.1021/acsnano.6b05521 ↗
18. Palmer, J. E., Saitoh, T., Yodo, T. & Tamura, M. Growth of GaSe on As-passivated Si(111) substrates. J. Cryst. Growth 147, 283–291 (1995).10.1016/0022-0248(94)00673-3 ↗
19. Rumaner, L. E., Gray, J. L. & Ohuchi, F. S. Nucleation and growth of GaSe on GaAs by Van der Waal epitaxy. J. Cryst. Growth 177, 17–27 (1997).10.1016/S0022-0248(96)00970-0 ↗
20. Ben Aziza, Z. et al. Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures. Phys. Rev. B 96, 035407 (2017).10.1103/PhysRevB.96.035407 ↗
21. Yuan, X. et al. Arrayed van der Waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy. Nano Lett. 15, 3571–3577 (2015).10.1021/acs.nanolett.5b01058 ↗
22. Khatiri, A., Krzyzewski, T. J., McConville, C. F. & Jones, T. S. Atomic hydrogen cleaning of low-index GaAs surfaces. J. Cryst. Growth 282, 1–6 (2005).10.1016/j.jcrysgro.2005.04.046 ↗
23. Sugaya, T. & Kawabe, M. Low-temperature cleaning of GaAs substrate by atomic hydrogen irradiation. Jpn J. Appl. Phys. 30, L402 (1991).10.1143/JJAP.30.L402 ↗
24. Zhu, Z., Cheng, Y. & Schwingenschlögl, U. Topological phase transition in layered GaS and GaSe. Phys. Rev. Lett. 108, 266805 (2012).10.1103/PhysRevLett.108.266805 ↗
25. Li, X. et al. Revealing the preferred interlayer orientations and stackings of two-dimensional bilayer gallium selenide crystals. Angew. Chem. Int. Ed. 54, 2712–2717 (2015).10.1002/anie.201409743 ↗
26. Jung, C. S. et al. Red-to-ultraviolet emission tuning of two-dimensional gallium sulfide/selenide. ACS Nano 9, 9585–9593 (2015).10.1021/acsnano.5b04876 ↗
27. Brudnyi, V. N., Sarkisov, S. Y. & Kosobutsky, A. V. Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights. Semicond. Sci. Technol. 30, 115019 (2015).10.1088/0268-1242/30/11/115019 ↗
28. Lang, O., Tomm, Y., Schlaf, R., Pettenkofer, C. & Jaegermann, W. Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy. II. Junction characterization. J. Appl. Phys. 75, 7814 (1994).10.1063/1.356563 ↗
29. Do, D. T., Mahanti, S. D. & Lai, C. W. Spin splitting in 2D monochalcogenide semiconductors. Sci. Rep. 5, 17044 (2015).10.1038/srep17044 ↗
30. Rybkovskiy, D. V. et al. Size-induced effects in gallium selenide electronic structure: the influence of interlayer interactions. Phys. Rev. B 84, 085314 (2011).10.1103/PhysRevB.84.085314 ↗
31. Li, P. & Appelbaum, I. Symmetry, distorted band structure, and spin-orbit coupling of group-III metal-monochalcogenide monolayers. Phys. Rev. B 92, 195129 (2015).10.1103/PhysRevB.92.195129 ↗
32. Wang, Y. et al. Electrochemical delamination of CVD-grown graphene film: toward the recyclable use of copper catalyst. ACS Nano 5, 9927–9933 (2011).10.1021/nn203700w ↗
33. Koefoed, L. et al. Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(1 1 1). J. Phys. D. Appl. Phys. 48, 115306 (2015).10.1088/0022-3727/48/11/115306 ↗
34. Escher, M. et al. NanoESCA: a novel energy filter for imaging x-ray photoemission spectroscopy. J. Phys. Condens. Matter 17, S1329 (2005).10.1088/0953-8984/17/16/004 ↗
35. Escher, M., Winkler, K., Renault, O. & Barrett, N. Applications of high lateral and energy resolution imaging XPS with a double hemispherical analyser based spectromicroscope. J. Electron Spectrosc. Relat. Phenom. 178–179, 303–316 (2010).10.1016/j.elspec.2009.06.001 ↗
36. Zagonel, L. F. et al. Orientation-dependent work function of in situ annealed strontium titanate. J. Phys. Condens. Matter 21, 314013 (2009).10.1088/0953-8984/21/31/314013 ↗