Andreev pair injection into a transition metal dichalcogenide monolayer
Source abstract
Abstract
We demonstrate Andreev pair injection across Nb-WS2 junction evident as Andreev reflection in differential conductivity spectra below Nb critical temperature $${T}c$$ . The superconducting- 2D semiconducting junction defined by a focused ion beam, shaped Nb pads, and semi-dry transfer of single layer CVD-grown WS2 crystals ensured the mechanical integrity of the 2D TMD film, reduced contamination and defects at Nb-WS2 junction, enabling the pristine study of the interface and facilitating Andreev pair injection. We observed enhanced conductivity in $${dI}/{dV}$$ spectra for junction voltages smaller than the corresponding Nb superconducting gap, which vanishes as the device temperature is increased above the $${T}c$$ . The position and the temperature dependence of the conductivity peaks suggest proximity effect-related phenomena explained by developed modified BTK theory. The presented results are crucial for the future implementation of proximity-based 2D hybrid devices including quantum light sources and superconducting field-effect transistors based on superconductor-semiconductor junctions.
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Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Topological Materials and Phenomena
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References (62)
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1. Tinkham, M. Introduction to Superconductivity, 2nd ed. (Dover, 2004).
2. Natarajan, C. M., Tanner, M. G. & Hadfield, R. H. Superconducting Nanowire Single-Photon Detectors: Physics and Applications. Supercond. Sci. Technol. 25, 063001 (2012).10.1088/0953-2048/25/6/063001 ↗
3. Esmaeil Zadeh, I. et al. Superconducting Nanowire Single-Photon Detectors: A Perspective on Evolution, State-of-the-Art, Future Developments, and Applications. Appl Phys. Lett. 118, 190502 (2021).10.1063/5.0045990 ↗
4. Dauler, E. A. et al. Review of Superconducting Nanowire Single-Photon Detector System Design Options and Demonstrated Performance. Optical Eng. 53, 081907 (2014).10.1117/1.OE.53.8.081907 ↗
5. Suemune, I. et al. Photon-Pair Generation Based on Superconductivity. In IEICE Electronics Express. Vol. 9, 1184–1200 (2012).10.1587/elex.9.1184 ↗
6. Hayat, A., Kee, H.-Y., Burch, K. S. & Steinberg, A. M. Cooper-Pair-Based Photon Entanglement without Isolated Emitters. Phys. Rev. B 89, 94508 (2014).10.1103/PhysRevB.89.094508 ↗
7. Bouscher, S. et al. Enhanced Cooper-Pair Injection into a Semiconductor Structure by Resonant Tunneling. Phys. Rev. Lett. 128, 127701 (2022).10.1103/PhysRevLett.128.127701 ↗
8. Gray, K. E. A Superconducting Transistor. Appl Phys. Lett. 32, 392 (2008).10.1063/1.90066 ↗
9. Nishino, T., Miyake, M., Harada, Y. & Kawabe, U. Three-Terminal Superconducting Device Using a Si Single-Crystal Film. IEEE Electron Device Lett. 6, 297–299 (1985).10.1109/EDL.1985.26131 ↗
10. Mannhart, J. High-Tc Transistors. Supercond. Sci. Technol. 9, 49–67 (1996).10.1088/0953-2048/9/2/001 ↗
11. Likharev, K. K. & Semenov, V. K. RSFQ Logic/Memory Family: A New Josephson-Junction Technology for Sub-Terahertz-Clock-Frequency Digital Systems. IEEE Trans. Appl. Superconductivity 1, 3–28 (1991).10.1109/77.80745 ↗
12. Chen, W., Rylyakov, A. V., Patel, V., Lukens, J. E. & Likharev, K. K. Rapid Single Flux Quantum T-Flip Flop Operating up to 770 GHz. IEEE Trans. Appl Superconductivity 9, 3212–3215 (1999).10.1109/77.783712 ↗
13. Huang, H.-L., Wu, D., Fan, D. & Zhu, X. Superconducting Quantum Computing: A Review. Sci. China Inf. Sci. 63, 180501 (2020).10.1007/s11432-020-2881-9 ↗
14. Marjieh, R., Sabag, E. & Hayat, A. Light Amplification in Semiconductor-Superconductor Structures. N. J. Phys. 18, 023019 (2016).10.1088/1367-2630/18/2/023019 ↗
15. Strugo, N., Balasubramanian, K., Panna, D. & Hayat, A. Enhanced Two-Photon Amplification in Superconductor-Semiconductor Plasmonic Waveguides. Opt. Lett. 45, 2062 (2020).10.1364/OL.387928 ↗
16. Bouscher, S., Panna, D. & Hayat, A. Semiconductor–Superconductor Optoelectronic Devices. J. Opt. 19, 103003 (2017).10.1088/2040-8986/aa8888 ↗
17. Silvert, W. Theory of the Superconducting Proximity Effect. J. Low. Temp. Phys. 20, 439–477 (1975).10.1007/BF00120864 ↗
18. McMillan, W. L. Tunneling Model of the Superconducting Proximity Effect. Phys. Rev. 175, 537–542 (1968).10.1103/PhysRev.175.537 ↗
19. Morpurgo, A. F., Kong, J., Marcus, C. M. & Dai, H. Gate-Controlled Superconducting Proximity Effect in Carbon Nanotubes. Science 286, 263–265 (1999).10.1126/science.286.5438.263 ↗
20. De Franceschi, S., Kouwenhoven, L., Schönenberger, C. & Wernsdorfer, W. Hybrid Superconductor–Quantum Dot Devices. Nat. Nanotechnol. 5, 703–711 (2010).10.1038/nnano.2010.173 ↗
21. Kleinsasser, A. W. Superconducting Field-Effect Devices. In: The New Superconducting Electronics, pp 249–275 (Springer, 1993).10.1007/978-94-011-1918-4_8 ↗
22. Fu, L. & Kane, C. L. Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator. Phys. Rev. Lett. 100, 096407 (2008).10.1103/PhysRevLett.100.096407 ↗
23. Frolov, S. M., Manfra, M. J. & Sau, J. D. Topological Superconductivity in Hybrid Devices. Nat. Phys. 16, 718–724 (2020).10.1038/s41567-020-0925-6 ↗
24. Bouscher, S., Winik, R. & Hayat, A. Andreev Reflection Enhancement in Semiconductor-Superconductor Structures. Phys. Rev. B 97, 054512 (2018).10.1103/PhysRevB.97.054512 ↗
25. Panna, D. et al. Andreev Reflection in a Superconducting Light-Emitting Diode. Nano Lett. 18, 6764–6769 (2018).10.1021/acs.nanolett.8b02511 ↗
26. Blonder, G. E., Tinkham, M. & Klapwijk, T. M. Transition from Metallic to Tunneling Regimes in Superconducting Microconstrictions: Excess Current, Charge Imbalance, and Supercurrent Conversion. Phys. Rev. B 25, 4515–4532 (1982).10.1103/PhysRevB.25.4515 ↗
27. Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices, 3rd ed. (Wiley, 2006). https://doi.org/10.1002/0470068329.10.1002/0470068329 ↗
28. Gunnarsson, D. et al. Interfacial Engineering of Semiconductor–Superconductor Junctions for High Performance Micro-Coolers. Sci. Rep. 5, 17398 (2015).10.1038/srep17398 ↗
29. De Franceschi, S. et al. Andreev Reflection in Si-Engineered Al/InGaAs Hybrid Junctions. Appl. Phys. Lett. 73, 3890–3892 (1998).10.1063/1.122926 ↗
30. Heslinga, D. R. & Klapwijk, T. M. Schottky Barrier and Contact Resistance at a Niobium/Silicon Interface. Appl. Phys. Lett. 54, 1048–1050 (1989).10.1063/1.100793 ↗
31. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically Thin MoS2: A New Direct-Gap Semiconductor. Phys. Rev. Lett. 105, 136805 (2010).10.1103/PhysRevLett.105.136805 ↗
32. Butler, S. Z. et al. Progress, Challenges, and Opportunities in Two-Dimensional Materials beyond Graphene. ACS Nano. Am. Chem. Soc. April 23, 2898–2926 (2013).
33. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).10.1038/nnano.2012.193 ↗
34. Das, S., Robinson, J. A., Dubey, M., Terrones, H. & Terrones, M. Beyond Graphene: Progress in Novel Two-Dimensional Materials and van Der Waals Solids. Annu. Rev. Mater. Res. 45, 1–27 (2015).10.1146/annurev-matsci-070214-021034 ↗
35. Bhimanapati, G. R. et al. Recent Advances in Two-Dimensional Materials beyond Graphene. ACS Nano 9, 11509–11539 (2015).10.1021/acsnano.5b05556 ↗
36. Berkelbach, T. C. & Reichman, D. R. Optical and Excitonic Properties of Atomically Thin Transition-Metal Dichalcogenides. Annu. Rev. Condens Matter. Phys. 9, 379–396 (2018).10.1146/annurev-conmatphys-033117-054009 ↗
37. Li, M.-Y., Chen, C.-H., Shi, Y. & Li, L.-J. Heterostructures Based on Two-Dimensional Layered Materials and Their Potential Applications. Mater. Today 19, 322–335 (2016).10.1016/j.mattod.2015.11.003 ↗
38. Gong, C. et al. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides. Adv. Sci. 4, 1700231 (2017).10.1002/advs.201700231 ↗
39. Ren, T. & Loh, K. P. On-Chip Integrated Photonic Circuits Based on Two-Dimensional Materials and Hexagonal Boron Nitride as the Optical Confinement Layer. J. Appl. Phys. 125, 230901 (2019).10.1063/1.5096195 ↗
40. Datta, I. et al. Low-Loss Composite Photonic Platform Based on 2D Semiconductor Monolayers. Nat. Photonics 14, 256–262 (2020).10.1038/s41566-020-0590-4 ↗
41. Turunen, M. et al. Quantum Photonics with Layered 2D Materials. Nat. Rev. Phys. 4, 219–236 (2022).10.1038/s42254-021-00408-0 ↗
42. Shi, W. et al. Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating. Sci. Rep. 5, 12534 (2015).10.1038/srep12534 ↗
43. Qiu, D. et al. Recent Advances in 2D Superconductors. Adv. Mater. 33, 2006124 (2021).10.1002/adma.202006124 ↗
44. Kim, J. et al. Visualization of Geometric Influences on Proximity Effects in Heterogeneous Superconductor Thin Films. Nat. Phys. 8, 464–469 (2012).10.1038/nphys2287 ↗
45. Xu, J.-P. et al. Artificial Topological Superconductor by the Proximity Effect. Phys. Rev. Lett. 112, 217001 (2014).10.1103/PhysRevLett.112.217001 ↗
46. Shi, W. et al. Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating. Sci. Rep. 2015 5:1 5, 1–10 (2015).
47. Ramezani, M. et al. Superconducting Contacts to a Monolayer Semiconductor. Nano Lett. 21, 5614–5619 (2021).10.1021/acs.nanolett.1c00615 ↗
48. Island, J. O., Steele, G. A., Zant, H. S. J. & van der; Castellanos-Gomez, A. Thickness Dependent Interlayer Transport in Vertical MoS 2 Josephson Junctions. 2 d. Mater. 3, 031002 (2016).
49. Huang, C. et al. Inducing Strong Superconductivity in WTe 2 by a Proximity Effect. ACS Nano 12, 7185–7196 (2018).10.1021/acsnano.8b03102 ↗
50. Trainer, D. J. et al. Proximity-Induced Superconductivity in Monolayer MoS 2. ACS Nano 14, 2718–2728 (2020).10.1021/acsnano.9b07475 ↗
51. George, A. et al. Controlled Growth of Transition Metal Dichalcogenide Monolayers Using Knudsen-Type Effusion Cells for the Precursors. J. Phys. Mater. 2, 016001 (2019).10.1088/2515-7639/aaf982 ↗
52. Zeng, H. et al. Optical Signature of Symmetry Variations and Spin-Valley Coupling in Atomically Thin Tungsten Dichalcogenides. Sci. Rep. 3, 1608 (2013).10.1038/srep01608 ↗
53. Berkdemir, A. et al. Identification of Individual and Few Layers of WS2 Using Raman Spectroscopy. Sci. Rep. 3, 1755 (2013).10.1038/srep01755 ↗
54. Prasad, R. K., Kumari, M. & Singh, D. K. Controlled Nucleation Sites with Large Coverage Area for Continuous Monolayered WS 2 Growth by Using the CVD Process. Cryst. Growth Des. 23, 7744–7753 (2023).10.1021/acs.cgd.3c00527 ↗
55. Zhang, L. et al. Modulated Interlayer Charge Transfer Dynamics in a Monolayer TMD/Metal Junction. Nanoscale 11, 418–425 (2019).10.1039/C8NR08728H ↗
56. Yang, S., Chen, Y. & Jiang, C. Strain Engineering of Two-Dimensional Materials: Methods, Properties, and Applications. InfoMat 3, 397–420 (2021).10.1002/inf2.12177 ↗
57. Chernikov, A. et al. Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2. Phys. Rev. Lett. 113, 076802 (2014).10.1103/PhysRevLett.113.076802 ↗
58. Blonder, G. E. & Tinkham, M. Metallic to Tunneling Transition in Cu-Nb Point Contacts. Phys. Rev. B 27, 112–118 (1983).10.1103/PhysRevB.27.112 ↗
59. Wolf, E. L. Principles of Electron Tunneling Spectroscopy, 2nd ed. (Oxford University Press, 2012).
60. Heslinga, D. R., Shafranjuk, S. E., van Kempen, H. & Klapwijk, T. M. Observation of Double-Gap-Edge Andreev Reflection at Si/Nb Interfaces by Point-Contact Spectroscopy. Phys. Rev. B 49, 10484–10494 (1994).10.1103/PhysRevB.49.10484 ↗
61. Zareapour, P. et al. Proximity-Induced High-Temperature Superconductivity in the Topological Insulators Bi2Se3 and Bi2Te3. Nat. Commun. 3, 1–8 (2012).10.1038/ncomms2042 ↗
62. van Huffelen, W. M., Klapwijk, T. M., Heslinga, D. R., de Boer, M. J. & van der Post, N. Carrier transport in mesoscopic silicon-coupled superconducting junctions. Phys. Rev. B 47, 5170 (1993).10.1103/PhysRevB.47.5170 ↗