Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure
Source abstract
Abstract
Abstract Ion-sensitive field-effect transistors (ISFETs) have gained a lot of attention in recent times as compact, low-cost biosensors with fast response time and label-free detection. Dual gate ISFETs have been shown to enhance detection sensitivity beyond the Nernst limit of 59 mV pH−1when the back gate dielectric is much thicker than the top dielectric. However, the thicker back-dielectric limits its application for ultrascaled point-of-care devices. In this work, we introduce and demonstrate a pH sensor, with WSe2(top)/MoS2(bottom) heterostructure based double gated ISFET. The proposed device is capable of surpassing the Nernst detection limit and uses thin high-k hafnium oxide as the gate oxide. The 2D atomic layered structure, combined with nanometer-thick top and bottom oxides, offers excellent scalability and linear response with a maximum sensitivity of 362 mV pH−1. We have also used technology computer-aided (TCAD) simulations to elucidate the underlying physics, namely back gate electric field screening through channel and interface charges due to the heterointerface. The proposed mechanism is independent of the dielectric thickness that makes miniaturization of these devices easier. We also demonstrate super-Nernstian behavior with the flipped MoS2(top)/WSe2(bottom) heterostructure ISFET. The results open up a new pathway of 2D heterostructure engineering as an excellent option for enhancing ISFET sensitivity beyond the Nernst limit, for the next-generation of label-free biosensors for single-molecular detection and point-of-care diagnostics.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Analytical Chemistry and Sensors · Gas Sensing Nanomaterials and Sensors · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (54)
Show source-provided references
1. Fakih, I. et al. Selective ion sensing with high resolution large area graphene field effect transistor arrays. Nat. Commun. 11, 1–12 (2020).10.1038/s41467-020-16979-y ↗
2. Lim, D. V., Simpson, J. M., Kearns, E. A. & Kramer, M. F. Current and developing technologies for monitoring agents of bioterrorism and biowarfare. Clin. Microbiol. Rev. 18, 583–607 (2005).10.1128/CMR.18.4.583-607.2005 ↗
3. Sadighbayan, D., Hasanzadeh, M. & Ghafar-Zadeh, E. Biosensing based on field-effect transistors (FET): Recent progress and challenges. TrAC Trends Anal. Chem. 133, 116067 (2020).10.1016/j.trac.2020.116067 ↗
4. Syu, Y. C., Hsu, W. E. & Lin, C. T. Review—Field-effect transistor biosensing: devices and clinical applications. ECS J. Solid State Sci. Technol. 7, Q3196–Q3207 (2018).10.1149/2.0291807jss ↗
5. Keeble, L., Moser, N., Rodriguez-Manzano, J. & Georgiou, P. ISFET-based sensing and electric field actuation of DNA for on-chip detection: a review. IEEE Sens. J. 20, 11044–11065 (2020).10.1109/JSEN.2020.2998168 ↗
6. Kaisti, M. et al. An ion-sensitive floating gate FET model: operating principles and electrofluidic gating. IEEE Trans. Electron Devices 62, 2628–2635 (2015).10.1109/TED.2015.2441878 ↗
7. Chen, S., Bomer, J. G., Carlen, E. T. & Van Den Berg, A. Al2O3/silicon nanoISFET with near ideal nernstian response. Nano Lett. 11, 2334–2341 (2011).10.1021/nl200623n ↗
8. Bergveld, P. Thirty years of ISFETOLOGY: what happened in the past 30 years and what may happen in the next 30 years. Sens. Actuators B Chem. 88, 1–20 (2003).10.1016/S0925-4005(02)00301-5 ↗
9. Spijkman, M. et al. Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors. Appl. Phys. Lett. 98, 2011–2014 (2011).10.1063/1.3546169 ↗
10. Bellando, F. et al. Subthermionic negative capacitance ion sensitive field-effect transistor. Appl. Phys. Lett. 116, 173503 (2020).10.1063/5.0005411 ↗
11. Dwivedi, P., Singh, R. & Chauhan, Y. S. Crossing the Nernst Limit (59 mV/pH) of sensitivity through tunneling transistor-based biosensor. IEEE Sens. J. 21, 3233–3240 (2021).10.1109/JSEN.2020.3025975 ↗
12. Knopfmacher, O. et al. Nernst limit in dual-gated Si-nanowire FET sensors. Nano Lett. 10, 2268–2274 (2010).10.1021/nl100892y ↗
13. Wu, T. et al. Experimental study of the detection limit in dual-gate biosensors using ultrathin silicon transistors. ACS Nano 11, 7142–7147 (2017).10.1021/acsnano.7b02986 ↗
14. Go, J. et al. Beating the Nernst limit of 59 mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors. in IEDM Technical Digest. 8.7.1–8.7.4 (IEEE, 2010).10.1109/IEDM.2010.5703325 ↗
15. Lu, C., Hou, T. & Pan, T. High-Performance Double-Gate alpha-InGaZnO ISFET pH sensor Using a HfO2 Gate dielectric. IEEE Trans. Electron Devices 65, 237–242 (2018).10.1109/TED.2017.2776144 ↗
16. Jeon, J. H. & Cho, W. J. Ultrasensitive coplanar Dual-Gate ISFETs for point-of-care biomedical applications. ACS Omega 5, 12809–12815 (2020).10.1021/acsomega.0c00427 ↗
17. Nair, P. R. & Alam, M. A. Screening-limited response of NanoBiosensors. Nano Lett. 8, 1281–1285 (2008).10.1021/nl072593i ↗
18. Spijkman, M. J. et al. Dual-gate organic field-effect transistors as potentiometrie sensors in aqueous solution. Adv. Funct. Mater. 20, 898–905 (2010).10.1002/adfm.200901830 ↗
19. Kalantar-Zadeh, K. & Ou, J. Z. Biosensors based on two-dimensional MoS2. ACS Sens. 1, 5–16 (2016).10.1021/acssensors.5b00142 ↗
20. Sarkar, D. et al. MoS2 field-effect transistor for next-generation label-free biosensors. ACS Nano 8, 3992–4003 (2014).10.1021/nn5009148 ↗
21. Nam, H. et al. Fabrication and comparison of MoS2 and WSe2 field-effect transistor biosensors. J. Vac. Sci. Technol. B 33, 06FG01 (2015).10.1116/1.4930040 ↗
22. Wang, H., Zhao, P., Zeng, X., Young, C. D. & Hu, W. High-stability pH sensing with a few-layer MoS2 field-effect transistor. Nanotechnology 30, 375203 (2019).10.1088/1361-6528/ab277b ↗
23. Lee, J. et al. Two-dimensional layered MoS2 biosensors enable highly sensitive detection of biomolecules. Sci. Rep. 4, 1–7 (2014).10.1038/srep07352 ↗
24. Zagni, N., Pavan, P. & Alam, M. A. Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors. Appl. Phys. Lett. 114, 233102 (2019).10.1063/1.5097828 ↗
25. Jeon, H. B., Shin, G. H., Lee, K. J. & Choi, S. Y. Vertical-tunneling field-effect transistor based on WSe2-MoS2 heterostructure with ion gel dielectric. Adv. Electron. Mater. 6, 1–6 (2020).
26. Wu, D. et al. Visualization of local conductance in MoS2/WSe2 heterostructure transistors. Nano Lett. 19, 1976–1981 (2019).10.1021/acs.nanolett.8b05159 ↗
27. Li, C. et al. WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment. Nanotechnology 28, 415201 (2017).10.1088/1361-6528/aa810f ↗
28. Nourbakhsh, A., Zubair, A., Dresselhaus, M. S. & Palacios, T. Transport properties of a MoS2/WSe2 heterojunction transistor and its potential for application. Nano Lett. 16, 1359–1366 (2016).10.1021/acs.nanolett.5b04791 ↗
29. Wang, H. et al. Two-dimensional heterostructures: fabrication, characterization, and application. Nanoscale 6, 12250–12272 (2014).10.1039/C4NR03435J ↗
30. Fu, W., Jiang, L., Geest, E. P., van, Lima, L. M. C. & Schneider, G. F. Sensing at the surface of graphene field-effect transistors. Adv. Mater. 29, 1603610 (2017).10.1002/adma.201603610 ↗
31. Jung, S.-H. et al. Super-Nernstian pH sensor based on anomalous charge transfer doping of defect-engineered graphene. Nano Lett. 21, 34–42 (2020).10.1021/acs.nanolett.0c02259 ↗
32. Lee, C. W. et al. Surface-tailored graphene channels. npj 2D Mater. Appl. 2021, 1–13 (2021). 51 5.
33. Van Der Wal, P. D. et al. High-k dielectrics for use as ISFET gate oxides. Proc. IEEE Sens. 2, 677–680 (2004).
34. Lai, C. S., Yang, C. M. & Lu, T. F. pH sensitivity improvement on 8 nm thick hafnium oxide by post deposition annealing. Electrochem. Solid State Lett. 9, 90–93 (2006).10.1149/1.2163550 ↗
35. Fredj, Z. et al. Capacitance electrochemical pH sensor based on different hafnium dioxide (HfO2) thicknesses. Chemosensors 9, 1–13 (2021).10.3390/chemosensors9010013 ↗
36. Ganapathi, K. L., Bhattacharjee, S., Mohan, S. & Bhat, N. High-performance HfO2 back gated multilayer MoS2 transistors. IEEE Electron Device Lett. 37, 797–800 (2016).
37. Smyth, C. M. et al. Engineering the palladium−WSe2 interface chemistry for field effect transistors with high-performance hole contacts. ACS Appl. Nano Mater. 2, 75–88 (2019).10.1021/acsanm.8b01708 ↗
38. Lakshmi Ganapathi, K., Bhat, N. & Mohan, S. Optimization and integration of ultrathin e-beam grown HfO2 gate dielectrics in MoS2 transistors. J. Phys. D Appl. Phys. 54, 445302 (2021).10.1088/1361-6463/ac19e0 ↗
39. Lee, I. et al. Gate-tunable hole and electron carrier transport in atomically thin dual-channel WSe2/MoS2 heterostructure for ambipolar field-effect transistors. Adv. Mater. 28, 9519–9525 (2016).10.1002/adma.201601949 ↗
40. Kaushik, N. et al. Reversible hysteresis inversion in MoS2 field effect transistors. npj 2D Mater. Appl. 1, 1–9 (2017).10.1038/s41699-017-0038-y ↗
41. Knobloch, T. et al. A physical model for the hysteresis in MoS2 transistors. IEEE J. Electron Devices Soc. 6, 972–978 (2018).10.1109/JEDS.2018.2829933 ↗
42. Go, J., Nair, P. R. & Alam, M. A. Theory of signal and noise in double-gated nanoscale electronic pH sensors. J. Appl. Phys. 112, 034516 (2012).10.1063/1.4737604 ↗
43. Shadman, A., Rahman, E. & Khosru, Q. D. M. Monolayer MoS2 and WSe2 double gate field effect transistor as super Nernst pH sensor and nanobiosensor. Sens. BioSens. Res. 11, 45–51 (2016).
44. Jang, H. J. & Cho, W. J. Fabrication of high-performance fully depleted silicon-on-insulator based dual-gate ion-sensitive field-effect transistor beyond the Nernstian limit. Appl. Phys. Lett. 100, 073701 (2012).10.1063/1.3685497 ↗
45. Koo, J., Gao, S., Lee, H. & Yang, L. Vertical dielectric screening of few-layer van der Waals semiconductors. Nanoscale 9, 14540–14547 (2017).10.1039/C7NR04134A ↗
46. Mori, T. et al. Characterization of effective mobility and its degradation mechanism in MoS2 MOSFETs. IEEE Trans. Nanotechnol. 15, 651–656 (2016).10.1109/TNANO.2016.2570280 ↗
47. Mirabelli, G., Gity, F., Monaghan, S., Hurley, P. K. & Duffy, R. Impact of impurities, interface traps and contacts on MoS2 MOSFETs: modelling and experiments. European Solid State Device Research Conference, 288–291 (IEEE, 2017)10.1109/ESSDERC.2017.8066648 ↗
48. Mirabelli, G. Two-dimensional semiconductors for future electronics, PhD Thesis, University College Cork. (2020)
49. Yang, G. W., Seo, S. G., Choi, S., Kim, D. H. & Jin, S. H. Unscrambling for subgap density-of-states in multilayered MoS2 field effect transistors under DC bias stress via optical charge-pumping capacitance-voltage spectroscopy. IEEE Access 9, 73090–73102 (2021).10.1109/ACCESS.2021.3081095 ↗
50. Mohammadi, E. & Manavizadeh, N. An Accurate TCAD-based model for ISFET simulation. IEEE Trans. Electron Devices 65, 3950–3956 (2018).10.1109/TED.2018.2857218 ↗
51. Silvaco Inc. ATLAS User’s Manual: Device Simulation Software. Silvaco Int., Santa Clara, CA (2016).
52. Arora, N. D., Hauser, J. R. & Roulston, D. J. Electron and hole mobilities in silicon as a function of concentration and temperature. IEEE Trans. Electron Devices 29, 292–295 (1982).10.1109/T-ED.1982.20698 ↗
53. Lee, M. H. et al. Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification. in IEDM Technical Digest. 4.5.1–4.5.4 (IEEE, 2013).
54. Liu, C. et al. Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack. Jpn. J. Appl. Phys. 55, 8–12 (2016).10.7567/JJAP.55.04EB08 ↗