Electrical transport properties in group-V elemental ultrathin 2D layers
Source abstract
Abstract
Abstract After the breakthrough of the study on the two-dimensional (2D) layered phosphorus, group-V elemental ultrathin 2D layers have captured considerable attentions in recent years on account of their unique and promising electrical transport properties, including semiconductor features with direct and desirable energy band structures, outstanding carrier mobilities, controllable and tunable characteristics under applied strain, electric and magnetic fields, highly anisotropic phenomena along both in-plane and out-plane directions, topological transmission states, and negative Poisson’s ratio. Accordingly, a number of investigations on this family of 2D materials have been conducting rapidly, while initiating great potential and new opportunities on the nanoscale science and applications in optoelectronic, magneto-electronics, thermo-electronic, ferroelectric, topological spintronics, and so on. Herein, a specific review is provided with systematical summarizations and refinements on the recent advances of the electrical transport in group-V elemental ultrathin 2D layers from the blossoming field of research, while comprehensive discussion and some recommendations are put forward, with an expectation of broadening and deepening understanding of the family of 2D layers. Lastly, we provide critical motivation and challenge for future explorations in this promising territory.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).10.1126/science.1102896 ↗
2. Xia, F., Wang, H., Xiao, D., Dubey, M. & Ramasubramaniam, A. Two-dimensional material nanophotonics. Nat. Photon 8, 899–907 (2014).10.1038/nphoton.2014.271 ↗
3. Franklin, A. D. Nanomaterials in transistors: from high-performance to thin-film applications. Science 349, aab2750 (2015).10.1126/science.aab2750 ↗
4. Chhowalla, M., Jena, D. & Zhang, H. Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 1, 16052 (2016).10.1038/natrevmats.2016.52 ↗
5. Tan, C. et al. Recent advances in ultrathin two-dimensional nanomaterials. Chem. Rev. 117, 6225–6331 (2017).10.1021/acs.chemrev.6b00558 ↗
6. Kong, X., Liu, Q., Zhang, C., Peng, Z. & Chen, Q. Elemental two-dimensional nanosheets beyond graphene. Chem. Soc. Rev. 46, 2127–2157 (2017).10.1039/C6CS00937A ↗
7. Akinwande, D., Petrone, N. & Hone, J. Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5678 (2014).10.1038/ncomms6678 ↗
8. Jie, W., Yang, Z., Bai, G. & Hao, J. Luminescence in 2D Materials and van der Waals Heterostructures. Adv. Opt. Mater. 6, 1701296 (2018).10.1002/adom.201701296 ↗
9. Balendhran, S., Walia, S., Nili, H., Sriram, S. & Bhaskaran, M. Elemental analogues of graphene: silicene, germanene, stanene, and phosphorene. Small 11, 640–652 (2015).10.1002/smll.201402041 ↗
10. Zhang, Y., Rubio, A. & Lay, G. L. Emergent elemental two-dimensional materials beyond graphene. J. Phys. D. Appl. Phys. 50, 053004 (2017).10.1088/1361-6463/aa4e8b ↗
11. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).10.1038/nnano.2012.193 ↗
12. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS transistors. Nat. Nanotechnol. 6, 147–150 (2011).10.1038/nnano.2010.279 ↗
13. Bai, G. et al. 2D Layered materials of rare-earth Er-doped MoS with NIR-to-NIR down- and up-conversion photoluminescence. Adv. Mater. 28, 7472–7477 (2016).10.1002/adma.201601833 ↗
14. Jiao, L. et al. Layer-dependent photoresponse of 2D MoS films prepared by pulsed laser deposition. J. Mater. Chem. C. 7, 2522–2529 (2019).10.1039/C8TC04612C ↗
15. Yang, Z. & Hao, J. Recent progress in 2D layered III–VI semiconductors and their heterostructures for optoelectronic device applications. Adv. Mater. Technol. 4, 1900108 (2019).10.1002/admt.201900108 ↗
16. Jie, W. et al. Layer-dependent nonlinear optical properties and stability of non-centrosymmetric modification in few-layer GaSe sheets. Angew. Chem. Int. Ed. Engl. 54, 1185–1189 (2015).10.1002/anie.201409837 ↗
17. Yang, Z. et al. Wafer-scale synthesis of high-quality semiconducting two-dimensional layered InSe with broadband photoresponse. ACS Nano 11, 4225–4236 (2017).10.1021/acsnano.7b01168 ↗
18. Anasori, B., Lukatskaya, M. R. & Gogotsi, Y. 2D metal carbides and nitrides (MXenes) for energy storage. Nat. Rev. Mater. 2, 16098 (2017).10.1038/natrevmats.2016.98 ↗
19. Pang, S. Y. et al. Universal strategy for HF-free facile and rapid synthesis of two-dimensional MXenes as multifunctional energy materials. J. Am. Chem. Soc. 141, 9610–9616 (2019).10.1021/jacs.9b02578 ↗
20. Liu, H., Du, Y., Deng, Y. & Ye, P. D. Semiconducting black phosphorus: synthesis, transport properties and electronic applications. Chem. Soc. Rev. 44, 2732–2743 (2015).10.1039/C4CS00257A ↗
21. Zhang, Z. et al. Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene. Appl. Phys. Express 8, 055201 (2015).10.7567/APEX.8.055201 ↗
22. Zhang, S. et al. Semiconducting group 15 monolayers: a broad range of band gaps and high carrier mobilities. Angew. Chem. Int. Ed. Engl. 55, 1666–1669 (2016).10.1002/anie.201507568 ↗
23. Takao, Y., Asahina, H. & Morita, A. Electronic structure of black phosphorus in tight binding approach. J. Phys. Soc. Jpn. 50, 3362–3369 (1981).10.1143/JPSJ.50.3362 ↗
24. Tran, V., Soklaski, R., Liang, Y. & Yang, L. Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Phys. Rev. B 89, 235319 (2014).10.1103/PhysRevB.89.235319 ↗
25. Akhtar, M. et al. Recent advances in synthesis, properties, and applications of phosphorene. npj 2D Mater. Appl. 1, 5 (2017).10.1038/s41699-017-0007-5 ↗
26. Liang, L. et al. Electronic bandgap and edge reconstruction in phosphorene materials. Nano Lett. 14, 6400–6406 (2014).10.1021/nl502892t ↗
27. Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014).10.1021/nn501226z ↗
28. Buscema, M. et al. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. 14, 3347–3352 (2014).10.1021/nl5008085 ↗
29. Na, J. et al. Few-layer black phosphorus field-effect transistors with reduced current fluctuation. ACS Nano 8, 11753–11762 (2014).10.1021/nn5052376 ↗
30. Zhang, J. et al. Phosphorene nanoribbon as a promising candidate for thermoelectric applications. Sci. Rep. 4, 6452 (2014).10.1038/srep06452 ↗
31. Qin, G. et al. Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance. Sci. Rep. 4, 6946 (2014).10.1038/srep06946 ↗
32. Qiao, J., Kong, X., Hu, Z. X., Yang, F. & Ji, W. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475, https://doi.org/10.1038/ncomms5475 (2014).10.1038/ncomms5475 ↗
33. Xia, F., Wang, H. & Jia, Y. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014).10.1038/ncomms5458 ↗
34. Fei, R. & Yang, L. Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus. Nano Lett. 14, 2884–2889 (2014).10.1021/nl500935z ↗
35. Rodin, A. S., Carvalho, A. & Castro Neto, A. H. Strain-induced gap modification in black phosphorus. Phys. Rev. Lett. 112, 176801 (2014).10.1103/PhysRevLett.112.176801 ↗
36. Liu, Q., Zhang, X., Abdalla, L. B., Fazzio, A. & Zunger, A. Switching a normal insulator into a topological insulator via electric field with application to phosphorene. Nano Lett. 15, 1222–1228 (2015).10.1021/nl5043769 ↗
37. Jiang, J. W. & Park, H. S. Negative poisson’s ratio in single-layer black phosphorus. Nat. Commun. 5, 4727 (2014).10.1038/ncomms5727 ↗
38. Li, D. et al. Polarization and thickness dependent absorption properties of black phosphorus: new saturable absorber for ultrafast pulse generation. Sci. Rep. 5, 15899 (2015).10.1038/srep15899 ↗
39. Li, L. et al. Quantum Hall effect in black phosphorus two-dimensional electron system. Nat. Nanotechnol. 11, 593–597 (2016).10.1038/nnano.2016.42 ↗
40. Moreno-Moreno, M., Lopez-Polin, G., Castellanos-Gomez, A., Gomez-Navarro, C. & Gomez-Herrero, J. Environmental effects in mechanical properties of few-layer black phosphorus. 2D Mater. 3, 031007 (2016).10.1088/2053-1583/3/3/031007 ↗
41. Pumera, M. & Sofer, Z. 2D Monoelemental arsenene, antimonene, and bismuthene: beyond black phosphorus. Adv. Mater. 29, 1605299 (2017).10.1002/adma.201605299 ↗
42. Zhang, S., Yan, Z., Li, Y., Chen, Z. & Zeng, H. Atomically thin arsenene and antimonene: semimetal-semiconductor and indirect-direct band-gap transitions. Angew. Chem. Int. Ed. Engl. 54, 3112–3115 (2015).10.1002/anie.201411246 ↗
43. Yang, Z., Wu, Z., Lyu, Y. & Hao, J. Centimeter-scale growth of two-dimensional layered high-mobility bismuth films by pulsed laser deposition. InfoMat 1, 98–107 (2019).10.1002/inf2.12001 ↗
44. Chen, P., Li, N., Chen, X., Ong, W.-J. & Zhao, X. The rising star of 2D black phosphorus beyond graphene: synthesis, properties and electronic applications. 2D Mater. 5, 014002 (2017).10.1088/2053-1583/aa8d37 ↗
45. Zhang, J. L. et al. Epitaxial growth of single layer blue phosphorus: a new phase of two-dimensional phosphorus. Nano Lett. 16, 4903–4908 (2016).10.1021/acs.nanolett.6b01459 ↗
46. Hu, Y. et al. van der Waals epitaxial growth and interfacial passivation of two-dimensional single-crystalline few-layer gray arsenic nanoflakes. Chem. Mater. 31, 4524–4535 (2019).10.1021/acs.chemmater.9b01151 ↗
47. Fortin-Deschênes, M. & Moutanabbir, O. Recovering the semiconductor properties of the epitaxial group V 2D materials antimonene and arsenene. J. Phys. Chem. C. 122, 9162–9168 (2018).10.1021/acs.jpcc.8b00044 ↗
48. Shao, Y. et al. epitaxial growth of flat antimonene monolayer: a new honeycomb analogue of graphene. Nano Lett. 18, 2133–2139 (2018).10.1021/acs.nanolett.8b00429 ↗
49. Wu, X. et al. Epitaxial growth and air-stability of monolayer antimonene on PdTe2. Adv. Mater. 29, 1605407 (2017).10.1002/adma.201605407 ↗
50. Gusmao, R., Sofer, Z., Bousa, D. & Pumera, M. Pnictogen (As, Sb, Bi) nanosheets for electrochemical applications are produced by shear exfoliation using kitchen blenders. Angew. Chem. Int. Ed. Engl. 56, 14417–14422 (2017).10.1002/anie.201706389 ↗
51. Tsai, H.-S. et al. Direct synthesis and practical bandgap estimation of multilayer arsenene nanoribbons. Chem. Mater. 28, 425–429 (2016).10.1021/acs.chemmater.5b04949 ↗
52. Tsai, H. S., Chen, C. W., Hsiao, C. H., Ouyang, H. & Liang, J. H. The advent of multilayer antimonene nanoribbons with room temperature orange light emission. Chem. Commun. (Camb.) 52, 8409–8412 (2016).10.1039/C6CC02778D ↗
53. Gibaja, C. et al. Few-layer antimonene by liquid-phase exfoliation. Angew. Chem. Int. Ed. Engl. 55, 14345–14349 (2016).10.1002/anie.201605298 ↗
54. Ji, J. et al. Two-dimensional antimonene single crystals grown by van der Waals epitaxy. Nat. Commun. 7, 13352 (2016).10.1038/ncomms13352 ↗
55. Lu, L. et al. Broadband nonlinear optical response in few-layer antimonene and antimonene quantum dots: a promising optical Kerr media with enhanced stability. Adv. Opt. Mater. 5, 1700301 (2017).10.1002/adom.201700301 ↗
56. Lu, L. et al. Few-layer bismuthene: sonochemical exfoliation, nonlinear optics and applications for ultrafast photonics with enhanced stability. Laser Photonics Rev. 12, 1700221 (2018).10.1002/lpor.201700221 ↗
57. Hussain, N. et al. Ultrathin Bi nanosheets with superior photoluminescence. Small 13, 1701349 (2017).10.1002/smll.201701349 ↗
58. Reis, F. et al. Bismuthene on a SiC substrate: a candidate for a high-temperature quantum spin Hall material. Science 357, 287–290 (2017).10.1126/science.aai8142 ↗
59. Gu, C. et al. Growth of quasi-free-standing single-layer blue phosphorus on tellurium monolayer functionalized Au(111). ACS Nano 11, 4943–4949 (2017).10.1021/acsnano.7b01575 ↗
60. Xu, J.-P. et al. One-dimensional phosphorus chain and two-dimensional blue phosphorene grown on Au(111) by molecular-beam epitaxy. Phys. Rev. Mater. 1, 061002 (2017).10.1103/PhysRevMaterials.1.061002 ↗
61. Fu, B., Feng, W., Zhou, X. & Yao, Y. Effects of hole doping and strain on magnetism in buckled phosphorene and arsenene. 2D Mater. 4, 025107 (2017).10.1088/2053-1583/aa6fa6 ↗
62. Bridgman, P. Two new modifications of phosphorus. J. Am. Chem. Soc. 36, 1344–1363 (1914).10.1021/ja02184a002 ↗
63. Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014).10.1038/nnano.2014.35 ↗
64. Yasaei, P. et al. High-quality black phosphorus atomic layers by liquid-phase exfoliation. Adv. Mater. 27, 1887–1892 (2015).10.1002/adma.201405150 ↗
65. Ling, X., Wang, H., Huang, S., Xia, F. & Dresselhaus, M. S. The renaissance of black phosphorus. Proc. Natl Acad. Sci. USA 112, 4523–4530 (2015).10.1073/pnas.1416581112 ↗
66. Asahina, H., Shindo, K. & Morita, A. Electronic structure of black phosphorus in self-consistent pseudopotential approach. J. Phys. Soc. Jpn. 51, 1193–1199 (1982).10.1143/JPSJ.51.1193 ↗
67. Lu, W. et al. Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization. Nano Res 7, 853–859 (2014).10.1007/s12274-014-0446-7 ↗
68. Zhang, S. et al. Extraordinary photoluminescence and strong temperature/angle-dependent Raman responses in few-layer phosphorene. ACS Nano 8, 9590–9596 (2014).10.1021/nn503893j ↗
69. Dong, S. et al. Ultralow-frequency collective compression mode and strong interlayer coupling in multilayer black phosphorus. Phys. Rev. Lett. 116, 087401 (2016).10.1103/PhysRevLett.116.087401 ↗
70. Dai, J. & Zeng, X. C. Bilayer phosphorene: effect of stacking order on bandgap and its potential applications in thin-film solar cells. J. Phys. Chem. Lett. 5, 1289–1293 (2014).10.1021/jz500409m ↗
71. Appalakondaiah, S., Vaitheeswaran, G., Lebègue, S., Christensen, N. E. & Svane, A. Effect of van der Waals interactions on the structural and elastic properties of black phosphorus. Phys. Rev. B 86, 035105 (2012).10.1103/PhysRevB.86.035105 ↗
72. Wood, J. D. et al. Effective passivation of exfoliated black phosphorus transistors against ambient degradation. Nano Lett. 14, 6964–6970 (2014).10.1021/nl5032293 ↗
73. Ryder, C. R. et al. Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry. Nat. Chem. 8, 597–602 (2016).10.1038/nchem.2505 ↗
74. Yang, Z. et al. Field-effect transistors based on amorphous black phosphorus ultrathin films by pulsed laser deposition. Adv. Mater. 27, 3748–3754 (2015).10.1002/adma.201500990 ↗
75. Bellus, M. Z., Yang, Z., Hao, J., Ping Lau, S. & Zhao, H. Amorphous two-dimensional black phosphorus with exceptional photocarrier transport properties. 2D Mater. 4, 025063 (2017).10.1088/2053-1583/aa676f ↗
76. Bellus, M. Z. et al. Efficient hole transfer from monolayer WS to ultrathin amorphous black phosphorus. Nanoscale Horiz. 4, 236–242 (2019).10.1039/C8NH00234G ↗
77. Kang, J. et al. Probing out-of-plane charge transport in black phosphorus with graphene-contacted vertical field-effect transistors. Nano Lett. 16, 2580–2585 (2016).10.1021/acs.nanolett.6b00144 ↗
78. Wu, F. et al. High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region. Nat. Commun. 10, 4663 (2019).10.1038/s41467-019-12707-3 ↗
79. Sofer, Z. et al. Layered black phosphorus: strongly anisotropic magnetic, electronic, and electron-transfer properties. Angew. Chem. Int. Ed. Engl. 55, 3382–3386 (2016).10.1002/anie.201511309 ↗
80. Han, X., Stewart, H. M., Shevlin, S. A., Catlow, C. R. & Guo, Z. X. Strain and orientation modulated bandgaps and effective masses of phosphorene nanoribbons. Nano Lett. 14, 4607–4614 (2014).10.1021/nl501658d ↗
81. Wang, X. et al. Highly anisotropic and robust excitons in monolayer black phosphorus. Nat. Nanotechnol. 10, 517–521 (2015).10.1038/nnano.2015.71 ↗
82. Luo, Z. et al. Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus. Nat. Commun. 6, 8572 (2015).10.1038/ncomms9572 ↗
83. Jiang, J. W. Thermal conduction in single-layer black phosphorus: highly anisotropic? Nanotechnology 26, 055701 (2015).10.1088/0957-4484/26/5/055701 ↗
84. Cao, X. & Guo, J. Simulation of phosphorene field-effect transistor at the scaling limit. IEEE Trans. Electron. Dev. 62, 659–665 (2014).10.1109/TED.2014.2377632 ↗
85. Fischetti, M. V., Fu, B. & Vandenberghe, W. G. Theoretical study of the gate leakage current in sub-10-nm field-effect transistors. IEEE Trans. Electron. Dev. 60, 3862–3869 (2013).10.1109/TED.2013.2280844 ↗
86. Peng, X., Wei, Q. & Copple, A. Strain-engineered direct-indirect band gap transition and its mechanism in two-dimensional phosphorene. Phys. Rev. B 90, 085402 (2014).10.1103/PhysRevB.90.085402 ↗
87. Taghizadeh Sisakht, E., Fazileh, F., Zare, M. H., Zarenia, M. & Peeters, F. M. Strain-induced topological phase transition in phosphorene and in phosphorene nanoribbons. Phys. Rev. B 94, 085417 (2016).10.1103/PhysRevB.94.085417 ↗
88. Çakir, D., Sahin, H. & Peeters, F. M. Tuning of the electronic and optical properties of single-layer black phosphorus by strain. Phys. Rev. B 90, 205421 (2014).10.1103/PhysRevB.90.205421 ↗
89. Peng, R. et al. Midinfrared electro-optic modulation in few-layer black phosphorus. Nano Lett. 17, 6315–6320 (2017).10.1021/acs.nanolett.7b03050 ↗
90. Whitney, W. S. et al. Field effect optoelectronic modulation of quantum-confined carriers in black phosphorus. Nano Lett. 17, 78–84 (2017).10.1021/acs.nanolett.6b03362 ↗
91. Liu, Y. et al. Gate-tunable giant stark effect in few-layer black phosphorus. Nano Lett. 17, 1970–1977 (2017).10.1021/acs.nanolett.6b05381 ↗
92. Sherrott, M. C. et al. Anisotropic quantum well electro-optics in few-layer black phosphorus. Nano Lett. 19, 269–276 (2019).10.1021/acs.nanolett.8b03876 ↗
93. Wang, Y. et al. Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene. Chem. Mater. 29, 2191–2201 (2017).10.1021/acs.chemmater.6b04909 ↗
94. Xu, J. H., Wang, E. G., Ting, C. S. & Su, W. P. Tight-binding theory of the electronic structures for rhombohedral semimetals. Phys. Rev. B Condens. Matter 48, 17271–17279 (1993).10.1103/PhysRevB.48.17271 ↗
95. Krebs, H., Holz, W. & Worms, K. H. Über die Struktur und die Eigenschaften der Halbmetalle, X. Eine Neue Rhombische Arsenmodifikation und Ihre Mischkristallbildung mit Schwarzem Phosphor. Chem. Ber. 90, 1031–1037 (1957).10.1002/cber.19570900624 ↗
96. Ma, S., Zhou, P., Sun, L. Z. & Zhang, K. W. Two-dimensional tricycle arsenene with a direct band gap. Phys. Chem. Chem. Phys. 18, 8723–8729 (2016).10.1039/C5CP07290E ↗
97. Xie, M. et al. A promising two-dimensional solar cell donor: black arsenic–phosphorus monolayer with 1.54 eV direct bandgap and mobility exceeding 14,000 cm V s. Nano Energy 28, 433–439 (2016).10.1016/j.nanoen.2016.08.058 ↗
98. Yang, J. Y. & Liu, L. H. Temperature-dependent dielectric functions in atomically thin graphene, silicene, and arsenene. Appl. Phys. Lett. 107, 091902 (2015).10.1063/1.4930025 ↗
99. Zhong, M. et al. Thickness-dependent carrier transport characteristics of a new 2D elemental semiconductor: black arsenic. Adv. Funct. Mater. 28, 1802581 (2018).10.1002/adfm.201802581 ↗
100. Zhang, H., Ma, Y. & Chen, Z. Quantum spin hall insulators in strain-modified arsenene. Nanoscale 7, 19152–19159 (2015).10.1039/C5NR05006E ↗