Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts
Source abstract
Abstract
Focusing on Rhenium disulfide (ReS 2 ), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS 2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to-insulator transition with enhanced room temperature carrier mobility up to 25 cm 2 /Vs, linear I ds -V ds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 10 6 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS 2 for CMOS compatible future electronic and optoelectronic devices.
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Research context
OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (70)
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