journal article·2024-11-14Open access

Solution-processable 2D materials for monolithic 3D memory-sensing-computing platforms: opportunities and challenges

Baoshan Tang, Maheswari Sivan, Jin Feng Leong, Zefeng Xu, Yu Zhang, Jianan Li, Ruyue Wan, Quanzhen Wan, Evgeny Zamburg, Aaron V-Y Thean

Abstract

Solution-processable 2D materials (2DMs) are gaining attention for applications in logic, memory, and sensing devices. This review surveys recent advancements in memristors, transistors, and sensors using 2DMs, focusing on their charge transport mechanisms and integration into silicon CMOS platforms. We highlight key challenges posed by the material’s nanosheet morphology and defect dynamics and discuss future potential for monolithic 3D integration with CMOS technology.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Advanced Sensor and Energy Harvesting Materials

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References (100+)

Show source-provided references
1. Theis, T. N. & Wong, H.-S. P. The end of moore’s law: A new beginning for information technology. Comput. Sci. Eng. 19, 41–50 (2017).10.1109/MCSE.2017.29 ↗
2. Veluri, H., Chand, U., Li, Y., Tang, B. & Thean, A. V.-Y. A Low-Power DNN Accelerator Enabled by a Novel Staircase RRAM Array. IEEE Transactions on Neural Networks and Learning Systems (2021).
3. Veluri, H., Li, Y., Niu, J. X., Zamburg, E. & Thean, A. V.-Y. High-Throughput, Area-Efficient, and Variation-Tolerant 3-D In-Memory Compute System for Deep Convolutional Neural Networks. IEEE Internet Things J. 8, 9219–9232 (2021).10.1109/JIOT.2021.3058015 ↗
4. Truong, T. P., Le, H. T. & Nguyen, T. T. in Journal of Physics: Conference Series. 012068 (IOP Publishing).
5. Thean, A. et al. in 2022 International Electron Devices Meeting (IEDM). 12.12. 11-12.12. 14 (IEEE).
6. Shulaker, M. M. et al. in 2014 IEEE International Electron Devices Meeting. 27.24. 21-27.24. 24 (IEEE).
7. Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).10.1038/s41586-021-03339-z ↗
8. Wang, S. et al. Two-dimensional devices and integration towards the silicon lines. Nat. Mater. 21, 1225–1239 (2022).10.1038/s41563-022-01383-2 ↗
9. Sachid, A. B. et al. Monolithic 3D CMOS using layered semiconductors. Adv. Mater. 28, 2547–2554 (2016).10.1002/adma.201505113 ↗
10. Wang, S., Liu, X. & Zhou, P. The road for two-dimensional semiconductors in the silicon age. Adv. Mater. 34, 2106886 (2022).10.1002/adma.202106886 ↗
11. Tang, B. et al. Direct n-to p-type channel conversion in monolayer/few-layer WS2 field-effect transistors by atomic nitrogen treatment. ACS Nano 12, 2506–2513 (2018).10.1021/acsnano.7b08261 ↗
12. Tang, B. et al. Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation. Sci. China Mater. 65, 741–747 (2022).10.1007/s40843-021-1782-y ↗
13. Yoon, Y., Ganapathi, K. & Salahuddin, S. How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768–3773 (2011).10.1021/nl2018178 ↗
14. Roy, S. et al. Structure, properties and applications of two‐dimensional hexagonal boron nitride. Adv. Mater. 33, 2101589 (2021).10.1002/adma.202101589 ↗
15. Caldwell, J. D. et al. Photonics with hexagonal boron nitride. Nat. Rev. Mater. 4, 552–567 (2019).10.1038/s41578-019-0124-1 ↗
16. Song, L. et al. Large scale growth and characterization of atomic hexagonal boron nitride layers. Nano Lett. 10, 3209–3215 (2010).10.1021/nl1022139 ↗
17. Qi, L., Ruan, S. & Zeng, Y. J. Review on recent developments in 2D ferroelectrics: Theories and applications. Adv. Mater. 33, 2005098 (2021).10.1002/adma.202005098 ↗
18. Lin, S. et al. Recent Advances in Layered Two-dimensional Ferroelectrics from Material to Device. Adv. Funct. Mater. 33, 2304139 (2023).10.1002/adfm.202304139 ↗
19. Wan, S. et al. Nonvolatile ferroelectric memory effect in ultrathin α‐In2Se3. Adv. Funct. Mater. 29, 1808606 (2019).10.1002/adfm.201808606 ↗
20. Duong, N. T. et al. Dynamic Ferroelectric Transistor-Based Reservoir Computing for Spatiotemporal Information Processing. Adv. Intellig. Syst. 5, 2300009 (2023).10.1002/aisy.202300009 ↗
21. Gibertini, M., Koperski, M., Morpurgo, A. F. & Novoselov, K. S. Magnetic 2D materials and heterostructures. Nat. Nanotechnol. 14, 408–419 (2019).10.1038/s41565-019-0438-6 ↗
22. Mak, K. F., Shan, J. & Ralph, D. C. Probing and controlling magnetic states in 2D layered magnetic materials. Nat. Rev. Phys. 1, 646–661 (2019).10.1038/s42254-019-0110-y ↗
23. Cortie, D. L. et al. Two‐dimensional magnets: forgotten history and recent progress towards spintronic applications. Adv. Funct. Mater. 30, 1901414 (2020).10.1002/adfm.201901414 ↗
24. Yao, J., Zheng, Z. & Yang, G. All‐layered 2D optoelectronics: a high‐performance UV–vis–NIR broadband SnSe photodetector with Bi2Te3 topological insulator electrodes. Adv. Funct. Mater. 27, 1701823 (2017).10.1002/adfm.201701823 ↗
25. Longo, E. et al. Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon. Adv. Funct. Mater. 32, 2109361 (2022).10.1002/adfm.202109361 ↗
26. Moore, J. E. The birth of topological insulators. Nature 464, 194–198 (2010).10.1038/nature08916 ↗
27. Mennel, L. et al. Ultrafast machine vision with 2D material neural network image sensors. Nature 579, 62–66 (2020).10.1038/s41586-020-2038-x ↗
28. Liu, L. et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature 605, 69–75 (2022).10.1038/s41586-022-04523-5 ↗
29. Wan, Y. et al. Low-defect-density WS2 by hydroxide vapor phase deposition. Nat. Commun. 13, 4149 (2022).10.1038/s41467-022-31886-0 ↗
30. Tao, L. et al. Deterministic and etching‐free transfer of large‐scale 2D layered materials for constructing interlayer coupled van der Waals heterostructures. Adv. Mater. Technol. 3, 1700282 (2018).10.1002/admt.201700282 ↗
31. Lemme, M. C., Akinwande, D., Huyghebaert, C. & Stampfer, C. 2D materials for future heterogeneous electronics. Nat. Commun. 13, 1392 (2022).10.1038/s41467-022-29001-4 ↗
32. Lin, Z., Huang, Y. & Duan, X. Van der Waals thin-film electronics. Nat. Electron. 2, 378–388 (2019).10.1038/s41928-019-0301-7 ↗
33. Tang, B. et al. Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing. Nat. Commun. 13, 3037 (2022).10.1038/s41467-022-30519-w ↗
34. Lin, Z. et al. Solution processable colloidal nanoplates as building blocks for high-performance electronic thin films on flexible substrates. Nano Lett. 14, 6547–6553 (2014).10.1021/nl503140c ↗
35. Zou, T. et al. High‐Performance Solution‐Processed 2D P‐Type WSe2 Transistors and Circuits through Molecular Doping. Adv. Mater. 35, 2208934 (2023).10.1002/adma.202208934 ↗
36. Li, J. et al. Printable two-dimensional superconducting monolayers. Nat. Mater. 20, 181–187 (2021).10.1038/s41563-020-00831-1 ↗
37. Li, Y. et al. Aerosol jet printed WSe 2 crossbar architecture device on kapton with dual functionality as resistive memory and photosensor for flexible system integration. IEEE Sens. J. 20, 4653–4659 (2020).10.1109/JSEN.2020.2966547 ↗
38. Feng, X. et al. A fully printed flexible MoS2 memristive artificial synapse with femtojoule switching energy. Adv. Electron. Mater. 5, 1900740 (2019).10.1002/aelm.201900740 ↗
39. Gao, X. et al. High-mobility patternable MoS 2 percolating nanofilms. Nano Res. 14, 2255–2263 (2021).10.1007/s12274-020-3218-6 ↗
40. Neilson, J., Avery, M. P. & Derby, B. Tiled monolayer films of 2D molybdenum disulfide nanoflakes assembled at liquid/liquid interfaces. ACS Appl. Mater. interfaces 12, 25125–25134 (2020).10.1021/acsami.0c03794 ↗
41. Carey, T. et al. High-Mobility Flexible Transistors with Low-Temperature Solution-Processed Tungsten Dichalcogenides. ACS Nano 17, 2912–2922 (2023).10.1021/acsnano.2c11319 ↗
42. Xu, Z. et al. Reconfigurable nonlinear photonic activation function for photonic neural network based on non-volatile opto-resistive RAM switch. Light.: Sci. Appl. 11, 288 (2022).10.1038/s41377-022-00976-5 ↗
43. Zefeng, X., Baoshan, T., Feng, L. J., Zamburg, E. & Thean, A. V.-Y. in CLEO: Science and Innovations. SM5P. 3 (Optica Publishing Group).
44. Zhang, P. et al. Electrochemically Exfoliated High‐Quality 2H‐MoS2 for Multiflake Thin Film Flexible Biosensors. Small 15, 1901265 (2019).10.1002/smll.201901265 ↗
45. García de Arquer, F. P., Armin, A., Meredith, P. & Sargent, E. H. Solution-processed semiconductors for next-generation photodetectors. Nat. Rev. Mater. 2, 1–17 (2017).
46. Tang, B. et al. Metal–organic framework-derived hierarchical MoS2/CoS2 nanotube arrays as pH-universal electrocatalysts for efficient hydrogen evolution. J. Mater. Chem. A 7, 13339–13346 (2019).10.1039/C9TA00545E ↗
47. Tang, B. et al. Simultaneous edge and electronic control of MoS 2 nanosheets through Fe doping for an efficient oxygen evolution reaction. Nanoscale 10, 20113–20119 (2018).10.1039/C8NR06659K ↗
48. Blake, P. et al. Graphene-based liquid crystal device. Nano Lett. 8, 1704–1708 (2008).10.1021/nl080649i ↗
49. Calabrese, G. et al. Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization. Nanoscale 12, 6708–6716 (2020).10.1039/C9NR09289G ↗
50. Carey, T. et al. Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics. Nat. Commun. 8, 1202 (2017).10.1038/s41467-017-01210-2 ↗
51. Finn, D. J. et al. Inkjet deposition of liquid-exfoliated graphene and MoS 2 nanosheets for printed device applications. J. Mater. Chem. C. 2, 925–932 (2014).10.1039/C3TC31993H ↗
52. Han, S. T. et al. Black phosphorus quantum dots with tunable memory properties and multilevel resistive switching characteristics. Adv. Sci. 4, 1600435 (2017).10.1002/advs.201600435 ↗
53. Hu, G. et al. Black phosphorus ink formulation for inkjet printing of optoelectronics and photonics. Nat. Commun. 8, 278 (2017).10.1038/s41467-017-00358-1 ↗
54. Griffin, A. et al. Spectroscopic size and thickness metrics for liquid-exfoliated h-BN. Chem. Mater. 30, 1998–2005 (2018).10.1021/acs.chemmater.7b05188 ↗
55. Lei, W. et al. Boron nitride colloidal solutions, ultralight aerogels and freestanding membranes through one-step exfoliation and functionalization. Nat. Commun. 6, 8849 (2015).10.1038/ncomms9849 ↗
56. Wang, Y. et al. Field-effect transistors made from solution-grown two-dimensional tellurene. Nat. Electron. 1, 228–236 (2018).10.1038/s41928-018-0058-4 ↗
57. Chandra, S., Dutta, P. & Biswas, K. High-performance thermoelectrics based on solution-grown SnSe nanostructures. ACS Nano 16, 7–14 (2021).10.1021/acsnano.1c10584 ↗
58. Qin, J. et al. Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications. ACS Nano 11, 10222–10229 (2017).10.1021/acsnano.7b04786 ↗
59. Ambrosi, A. & Pumera, M. Exfoliation of layered materials using electrochemistry. Chem. Soc. Rev. 47, 7213–7224 (2018).10.1039/C7CS00811B ↗
60. Huang, Y. et al. Universal mechanical exfoliation of large-area 2D crystals. Nat. Commun. 11, 2453 (2020).10.1038/s41467-020-16266-w ↗
61. Wang, J., Manga, K. K., Bao, Q. & Loh, K. P. High-yield synthesis of few-layer graphene flakes through electrochemical expansion of graphite in propylene carbonate electrolyte. J. Am. Chem. Soc. 133, 8888–8891 (2011).10.1021/ja203725d ↗
62. Parvez, K. et al. Electrochemically exfoliated graphene as solution-processable, highly conductive electrodes for organic electronics. ACS Nano 7, 3598–3606 (2013).10.1021/nn400576v ↗
63. Yu, W. et al. Domain engineering in ReS2 by coupling strain during electrochemical exfoliation. Adv. Funct. Mater. 30, 2003057 (2020).10.1002/adfm.202003057 ↗
64. Lin, Z. et al. High-yield exfoliation of 2D semiconductor monolayers and reassembly of organic/inorganic artificial superlattices. Chem 7, 1887–1902 (2021).10.1016/j.chempr.2021.03.022 ↗
65. Lin, Z. et al. Solution-processable 2D semiconductors for high-performance large-area electronics. Nature 562, 254–258 (2018).10.1038/s41586-018-0574-4 ↗
66. Li, J. et al. Ultrafast electrochemical expansion of black phosphorus toward high-yield synthesis of few-layer phosphorene. Chem. Mater. 30, 2742–2749 (2018).10.1021/acs.chemmater.8b00521 ↗
67. Yang, S. et al. A delamination strategy for thinly layered defect‐free high‐mobility black phosphorus flakes. Angew. Chem. 130, 4767–4771 (2018).10.1002/ange.201801265 ↗
68. Kim, Y. H., Yoo, B., Anthony, J. E. & Park, S. K. Controlled deposition of a high-performance small-molecule organic single-crystal transistor array by direct ink-jet printing. Adv. Mater. (Deerfield Beach, Fla.) 24, 497–502 (2011).10.1002/adma.201103032 ↗
69. Stark, M. S., Kuntz, K. L., Martens, S. J. & Warren, S. C. Intercalation of layered materials from bulk to 2D. Adv. Mater. 31, 1808213 (2019).10.1002/adma.201808213 ↗
70. Yang, R. et al. High-yield production of mono-or few-layer transition metal dichalcogenide nanosheets by an electrochemical lithium ion intercalation-based exfoliation method. Nat. Protoc. 17, 358–377 (2022).10.1038/s41596-021-00643-w ↗
71. Yang, R. et al. Intercalation in 2D materials and in situ studies. Nat. Rev. Chem. 8, 1–23 (2024).10.1038/s41570-024-00605-2 ↗
72. Yang, R. et al. Synthesis of atomically thin sheets by the intercalation-based exfoliation of layered materials. Nat. Synth. 2, 101–118 (2023).10.1038/s44160-022-00232-z ↗
73. Moazzami Gudarzi, M. et al. Chlorosulfuric acid-assisted production of functional 2D materials. npj 2D Mater. Appl. 5, 35 (2021).10.1038/s41699-021-00215-2 ↗
74. Zeng, Z. et al. Single‐layer semiconducting nanosheets: high‐yield preparation and device fabrication. Angew. Chem. 123, 11289–11293 (2011).10.1002/ange.201106004 ↗
75. Zeng, Z. et al. An effective method for the fabrication of few‐layer‐thick inorganic nanosheets. Angew. Chem. Int. Ed. 51, 9052–9056 (2012).10.1002/anie.201204208 ↗
76. Zeng, Z., Tan, C., Huang, X., Bao, S. & Zhang, H. Growth of noble metal nanoparticles on single-layer TiS 2 and TaS 2 nanosheets for hydrogen evolution reaction. Energy Environ. Sci. 7, 797–803 (2014).10.1039/C3EE42620C ↗
77. Wang, X. et al. Vacancy defects in 2D transition metal dichalcogenide electrocatalysts: from aggregated to atomic configuration. Advanced Materials, 2206576 (2022).10.1002/adma.202206576 ↗
78. Eda, G. et al. Photoluminescence from chemically exfoliated MoS2. Nano Lett. 11, 5111–5116 (2011).10.1021/nl201874w ↗
79. Safran, S. & Hamann, D. Long-range elastic interactions and staging in graphite intercalation compounds. Phys. Rev. Lett. 42, 1410 (1979).10.1103/PhysRevLett.42.1410 ↗
80. Zheng, J. et al. High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide. Nat. Commun. 5, 2995 (2014).10.1038/ncomms3995 ↗
81. Cooper, A. J., Wilson, N. R., Kinloch, I. A. & Dryfe, R. A. Single stage electrochemical exfoliation method for the production of few-layer graphene via intercalation of tetraalkylammonium cations. Carbon 66, 340–350 (2014).10.1016/j.carbon.2013.09.009 ↗
82. Shi, H. et al. Molecularly engineered black phosphorus heterostructures with improved ambient stability and enhanced charge carrier mobility. Adv. Mater. 33, 2105694 (2021).10.1002/adma.202105694 ↗
83. Bessonov, A. A. et al. Layered memristive and memcapacitive switches for printable electronics. Nat. Mater. 14, 199–204 (2015).10.1038/nmat4135 ↗
84. Bonaccorso, F., Bartolotta, A., Coleman, J. N. & Backes, C. 2D‐crystal‐based functional inks. Adv. Mater. 28, 6136–6166 (2016).10.1002/adma.201506410 ↗
85. Carey, T. et al. Inkjet printed circuits with 2D semiconductor inks for high‐performance electronics. Adv. Electron. Mater. 7, 2100112 (2021).10.1002/aelm.202100112 ↗
86. Biswas, S. & Drzal, L. T. A novel approach to create a highly ordered monolayer film of graphene nanosheets at the liquid− liquid interface. Nano Lett. 9, 167–172 (2009).10.1021/nl802724f ↗
87. Cote, L. J., Kim, F. & Huang, J. Langmuir− Blodgett assembly of graphite oxide single layers. J. Am. Chem. Soc. 131, 1043–1049 (2009).10.1021/ja806262m ↗
88. Singh, M., Haverinen, H. M., Dhagat, P. & Jabbour, G. E. Inkjet printing—process and its applications. Adv. Mater. 22, 673–685 (2010).10.1002/adma.200901141 ↗
89. Juntunen, T. et al. Inkjet printed large‐area flexible few‐layer graphene thermoelectrics. Adv. Funct. Mater. 28, 1800480 (2018).10.1002/adfm.201800480 ↗
90. Kelly, A. G. et al. All-printed thin-film transistors from networks of liquid-exfoliated nanosheets. Science 356, 69–73 (2017).10.1126/science.aal4062 ↗
91. Kim, J. et al. All‐Solution‐Processed Van der Waals Heterostructures for Wafer‐Scale Electronics. Adv. Mater. 34, 2106110 (2022).10.1002/adma.202106110 ↗
92. Li, J., Naiini, M. M., Vaziri, S., Lemme, M. C. & Östling, M. Inkjet printing of MoS2. Adv. Funct. Mater. 24, 6524–6531 (2014).10.1002/adfm.201400984 ↗
93. McManus, D. et al. Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures. Nat. Nanotechnol. 12, 343–350 (2017).10.1038/nnano.2016.281 ↗
94. Li, G. et al. Dynamical control over terahertz electromagnetic interference shielding with 2d ti3c2t y mxene by ultrafast optical pulses. Nano Lett. 20, 636–643 (2019).10.1021/acs.nanolett.9b04404 ↗
95. Morozov, S. et al. Giant intrinsic carrier mobilities in graphene and its bilayer. Phys. Rev. Lett. 100, 016602 (2008).10.1103/PhysRevLett.100.016602 ↗
96. Tanaka, T., Fukuda, K., Ebina, Y., Takada, K. & Sasaki, T. Highly organized self‐assembled monolayer and multilayer films of titania nanosheets. Adv. Mater. 16, 872–875 (2004).10.1002/adma.200306470 ↗
97. Matsuba, K. et al. Neat monolayer tiling of molecularly thin two-dimensional materials in 1 min. Sci. Adv. 3, e1700414 (2017).10.1126/sciadv.1700414 ↗
98. Yu, X., Prévot, M. S., Guijarro, N. & Sivula, K. Self-assembled 2D WSe2 thin films for photoelectrochemical hydrogen production. Nat. Commun. 6, 7596 (2015).10.1038/ncomms8596 ↗
99. Kim, H. et al. Large-Area 2D-MXene Nanosheet Assemblies Using Langmuir–Schaefer Technique: Wrinkle formation. ACS Appl. Mater. Interfaces 12, 42294–42301 (2020).10.1021/acsami.0c10990 ↗
100. Yun, T. et al. Ultrafast interfacial self-assembly of 2D transition metal dichalcogenides monolayer films and their vertical and in-plane heterostructures. ACS Appl. Mater. Interfaces 9, 1021–1028 (2017).10.1021/acsami.6b11365 ↗