Voltage-controlled reconfigurable characteristics in MoS2 transistors via ion migration for reprogrammable logic

2D semiconductors such as MoS 2 offer a promising pathway for future logic and analog transistors and memories. These materials feature scalable channel size, back-end of the line compatibility, and high mobility for relatively small channel thickness approaching few atomic monolayers. An open issue for the development of mature 2D-based digital technology is the availability of both n- and p-type transistors, as well as the ability to control the transistor type in a reconfigurable way. This work presents a novel MoS 2 -based transistor exhibiting reconfigurable n- or p-type characteristics, namely switching from n-type to p-type and vice versa, which is attributed to ion-assisted doping from the gate dielectric layer. Extensive characterization of the device shows repeatable switching with relatively low cycle-to-cycle (C2C) and device-to-device (D2D) variability. A reconfigurable p-n junction is demonstrated via a junction-less multi-gate MoS 2 -based transistor. We also demonstrate various reconfigurable logic gates, including a complementary metal-oxide-semiconductor (CMOS) inverter, a fully n-type inverter and an XNOR logic gate based on MoS 2 transistors, showcasing the generality and flexibility of channel reconfiguration for logic circuit applications. These results underscore the strong potential of reconfigurable MoS 2 transistors for ultra-scaled, reconfigurable logic circuits.