DataVXnpj 2D Materials and ApplicationsPaper
journal article·2017-08-10Open access

Embedded gate CVD MoS2 microwave FETs

Atresh Sanne, Saungeun Park, Rudresh Ghosh, Maruthi Nagavalli Yogeesh, Chison Liu, Leo Mathew, Rajesh Rao, Deji Akinwande, Sanjay Kumar Banerjee

npj 2D Materials and Applications· Volume 1· Issue 1
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Abstract

Abstract Recent studies have increased the cut off frequencies achievable by exfoliated MoS2 by employing a combination of channel length scaling and geometry modification. However, for industrial scale applications, the mechanical cleavage process is not scalable but, thus far, the same device improvements have not been realized on chemical vapor deposited MoS2. Here we use a gate-first process flow with an embedded gate geometry to fabricate short channel chemical vapor deposited MoS2 radio frequency transistors with a notable fT of 20 GHz and fmax of 11.4 GHz, and the largest high-field saturation velocity, vsat = 1.88 × 106 cm/s, in MoS2 reported so far. The gate-first approach, facilitated by cm-scale chemical vapor deposited MoS2, offers enhancement mode operation, ION/IOFF ratio of 108, and a transconductance (gm) of 70 μS/μm. The intrinsic fT (fmax) obtained here is 3X (2X) greater than previously reported top-gated chemical vapor deposited MoS2 radio frequency field-effect transistors. With as-measured S-parameters, we demonstrate the design of a GHz MoS2-based radio frequency amplifier. This amplifier has gain greater then 15 dB at 1.2 GHz, input return loss > 10 dB, bandwidth > 200 MHz, and DC power consumption of ~10 mW.
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Research context

Electronic materials

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications

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References (20)

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1. Mak, K., Lee, C., Hone, J., Shan, J. & Heinz, T. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805-1-4 (2010).10.1103/PhysRevLett.105.136805 ↗
2. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).10.1038/nnano.2010.279 ↗
3. Li, X. et al. Intrinsic electrical transport properties of monolayer silicene and MoS2 from first principles. Phys. Rev. B 87, 115418-1-9 (2013).10.1103/PhysRevB.87.115418 ↗
4. Krasnozhon, D., Lembke, D., Nyffeler, C., Leblebici, Y. & Kis, A. MoS2 transistors operating at gigahertz frequencies. Nano. Lett. 14, 5905–5911 (2014).10.1021/nl5028638 ↗
5. Krasnozhon, D., Dutta, S., Nyffeler, C., Leblebici, Y. & Kis, A. High-frequency, scaled MoS2 transistors. IEEE International Electron Devices Meeting (IEDM). doi:10.1109/iedm.2015.7409781 (2015).10.1109/iedm.2015.7409781 ↗
6. Cheng, R. et al. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat. Commun. 5, 5143 (2014).10.1038/ncomms6143 ↗
7. Sanne, A. et al. Radio frequency transistors and circuits based on CVD MoS2. Nano. Lett. 15, 5039–5045 (2015).10.1021/acs.nanolett.5b01080 ↗
8. Chang, H. et al. Large-area monolayer MoS2 for flexible low-power RF nanoelectronics in the GHz regime. Adv. Mater. 28, 1818–1823 (2015).10.1002/adma.201504309 ↗
9. Lee, J. et al. 25 GHz embedded-gate graphene transistors with high-K dielectrics on extremely flexible plastic sheets. ACS Nano 7, 7744–7750 (2013).10.1021/nn403487y ↗
10. Park, S. et al. Extremely high-frequency flexible graphene thin-film transistors. IEEE Electron Device Lett. 37, 512–515 (2016).10.1109/LED.2016.2535484 ↗
11. Schwierz, F. Graphene transistors: Status, prospects, and problems. Proc. IEEE 101, 1567–1584 (2013).10.1109/JPROC.2013.2257633 ↗
12. Han, S., Reddy, D., Carpenter, G., Franklin, A. & Jenkins, K. Current saturation in submicrometer graphene transistors with thin gate dielectric: Experiment, simulation, and theory. ACS Nano 6, 5220–5226 (2012).10.1021/nn300978c ↗
13. Yu, L. et al. Enhancement-mode single-layer CVD MoS2 FET technology for digital electronics. IEEE International Electron Devices Meeting (IEDM). doi:10.1109/iedm.2015.7409814 (2015).10.1109/iedm.2015.7409814 ↗
14. Conley, H. et al. Bandgap engineering of strained monolayer and bilayer MoS2. Nano Lett. 13, 3626–3630 (2013).10.1021/nl4014748 ↗
15. Roy, T. et al. Field-effect transistors built from all two-dimensional material components. ACS Nano 8, 6259–6264 (2014).10.1021/nn501723y ↗
16. Rai, A. et al. Interfacial-oxygen-vacancy mediated doping of MoS2 by high-k dielectrics. 73rd Annual Device Research Conference (DRC). doi:10.1109/drc.2015.7175626 (2015).10.1109/drc.2015.7175626 ↗
17. Sanne, A. et al. Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates. Appl. Phys. Lett. 106, 062101 (2015).10.1063/1.4907885 ↗
18. Rai, A. et al. Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation. Nano Lett. 15, 4329–4336 (2015).10.1021/acs.nanolett.5b00314 ↗
19. Kang, K. et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520, 656–660 (2015).10.1038/nature14417 ↗
20. Ku, W. & Petersen, W. Optimum gain-bandwidth limitations of transistor amplifiers as reactively constrained active two-port networks. IEEE Trans. Circuits Syst. 22, 523–533 (1975).10.1109/TCS.1975.1084074 ↗