High-performance junction-free field-effect transistor based on blue phosphorene
Source abstract
Abstract
Abstract Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results in contact resistance. We propose a junction-free field-effect transistor consisting of semiconducting monolayer blue phosphorene as channel material (with high carrier mobility) and metallic bilayer blue phosphorene as electrodes. The junction-free design minimizes the contact resistance. Employing first-principles calculations along with the non-equilibrium Green’s function method, we demonstrate a highIon/Ioffratio of up to 2.6 × 104and a remarkable transconductance of up to 811 μS/μm.
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Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials
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References (68)
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