Multi-functional polymorphic memory based on 2D ferroelectric tunnel junctions

In modern data-intensive applications, the segmentation of memory and processors leads to reduced throughput, lower energy efficiency, and increased latency. Functional memory systems address this by enabling operations beyond basic read-write tasks within memory arrays, as in in-memory computing (IMC). Non-volatile memories further enhance efficiency by storing data without static power loss. Of particular interest are 2D ferroelectric tunnel junctions (FTJs), such as those based on MoS 2 , due to their compact size, high ON–OFF ratios, and CMOS compatibility. In this work, we propose a novel memory design using MoS 2 -based FTJs that reliably store data via ferroelectric polarization and support multiple in-memory functions. These include Boolean logic, batch reads, variation-robust self-referencing reads, and reconfigurable content-addressable memory functionality through peripheral circuit changes. We validate these polymorphic behaviors through measured characteristics of fabricated 2D MoS 2 -FTJs and simulations using the GlobalFoundries’ 22 nm silicon-on-insulator technology node.