Improved additive manufacturing of silicon carbide parts via pressureless electric field‐assisted sintering
Source abstract
Abstract
High solids loading silicon carbide (SiC)-based aqueous slurries containing only .5 wt. % organic additives were utilized to create specimens of various geometries via an extrusion-based additive manufacturing (AM) technique. Pressureless electric field-assisted sintering was performed to densify each specimen without deformation. The combination of these techniques produced parts with >98% relative density despite containing only 5 wt.% oxide sintering additives. After sintering, specimens contained only the α-SiC and yttrium aluminum perovskite phases. This suggests the evolution of a nonequilibrium yttrium aluminate phase, as well as transformation from β-SiC to α-SiC. The fabrication method presented in this work has advantages over other AM techniques commonly used with SiC, because it does not require significant organic additives nor additional postprocessing steps such as chemical vapor infiltration or polymer impregnation and pyrolysis.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Advanced materials and composites · Additive Manufacturing and 3D Printing Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering Missouri University of Science and Technology Rolla Missouri USA
Department of Materials Science and Technology Nanjing University of Aeronautics and Astronautics Nanjing China
Department of Mechanical and Aerospace Engineering Missouri University of Science and Technology Rolla Missouri USA
Department of Nuclear Engineering and Radiation Science Missouri University of Science and Technology Rolla Missouri USA
References (38)
Show source-provided references
1. 10.1007/978-94-011-3842-0_210.1007/978-94-011-3842-0_2 ↗
2. 10.1016/j.jnucmat.2007.05.01610.1016/j.jnucmat.2007.05.016 ↗
3. 10.1016/j.ceramint.2011.06.03610.1016/j.ceramint.2011.06.036 ↗
4. 10.2109/jcersj.103.74010.2109/jcersj.103.740 ↗
5. 10.1016/j.ijrmhm.2018.08.00810.1016/j.ijrmhm.2018.08.008 ↗
6. 10.1016/j.jeurceramsoc.2019.02.04210.1016/j.jeurceramsoc.2019.02.042 ↗
7. 10.1016/j.jeurceramsoc.2010.09.00210.1016/j.jeurceramsoc.2010.09.002 ↗
8. 10.1111/jace.1370010.1111/jace.13700 ↗
9. 10.1016/j.jeurceramsoc.2018.11.01310.1016/j.jeurceramsoc.2018.11.013 ↗
10. 10.1016/j.jeurceramsoc.2009.07.01910.1016/j.jeurceramsoc.2009.07.019 ↗
11. 10.1016/j.cirpj.2016.05.00210.1016/j.cirpj.2016.05.002 ↗
12. 10.1016/j.ceramint.2016.07.05210.1016/j.ceramint.2016.07.052 ↗
13. 10.1016/j.jeurceramsoc.2012.03.00610.1016/j.jeurceramsoc.2012.03.006 ↗
14. 10.1016/j.addma.2017.04.00110.1016/j.addma.2017.04.001 ↗
15. 10.1016/j.jmst.2019.08.00110.1016/j.jmst.2019.08.001 ↗
16. 10.1007/s40145-020-0422-510.1007/s40145-020-0422-5 ↗
17. 10.1007/s40145-021-0484-z10.1007/s40145-021-0484-z ↗
18. 10.1016/j.ceramint.2021.10.17610.1016/j.ceramint.2021.10.176 ↗
19. 10.1111/jace.1664810.1111/jace.16648 ↗
20. 10.1016/j.ceramint.2018.08.14310.1016/j.ceramint.2018.08.143 ↗
21. 10.3390/ma1307176610.3390/ma13071766 ↗
22. 10.1016/j.jnucmat.2020.15257710.1016/j.jnucmat.2020.152577 ↗
23. 10.1002/adem.20140009710.1002/adem.201400097 ↗
24. 10.1111/jace.1688810.1111/jace.16888 ↗
25. 10.1016/j.ceramint.2019.06.02110.1016/j.ceramint.2019.06.021 ↗
26. 10.1016/j.ceramint.2019.02.15410.1016/j.ceramint.2019.02.154 ↗
27. Effect of particle size distribution on SiC ceramic sinterability
28. 10.1016/j.jeurceramsoc.2013.02.00910.1016/j.jeurceramsoc.2013.02.009 ↗
29. 10.1016/j.actamat.2007.04.02710.1016/j.actamat.2007.04.027 ↗
30. 10.1016/S1359-6454(99)00368-710.1016/S1359-6454(99)00368-7 ↗
31. 10.1007/s11669-015-0435-x10.1007/s11669-015-0435-x ↗
32. 10.1016/j.ceramint.2011.01.04810.1016/j.ceramint.2011.01.048 ↗
33. Growth phenomena in silicon carbide
34. 10.1007/BF0128482910.1007/BF01284829 ↗
35. 10.1016/j.apsusc.2011.12.13210.1016/j.apsusc.2011.12.132 ↗
36. 10.1016/0022-0248(71)90263-610.1016/0022-0248(71)90263-6 ↗
37. 10.1007/BF0111472210.1007/BF01114722 ↗
38. 10.1111/j.1551-2916.2012.05276.x10.1111/j.1551-2916.2012.05276.x ↗