Microwave surface transport in narrow-bandgap PdSe2 -MOSFETs
Source abstract
Abstract
Abstract Group-10 transition-metal dichalcogenides are puckered van der Waals semiconductors, with a narrow bandgap, envisioned for ultra-broadband infrared (IR) detection. To assess their dynamical transport properties we investigate {PdSe}2 n-MOSFETs by using microwave admittance spectroscopy. We report on surface channel inversion-depletion-accumulation behaviors with a depletion length of 15nm, a mobility of 110{cm}2{V}−1{s}−1, and a bulk bandgap of 0.15eV. Our 10 µm long devices have an electronic cut-off frequency in the GHz range promising a large gain-bandwidth product, competitive with that of III–V (InAs) and II–VI (HgCdTe) devices. The integration of bulk absorption and surface readout in {PdSe}2-MOSFETs is a monolithic geometry suitable for fast IR detection in the application-rich 1–10μm range, which includes molecular spectroscopy, atmospheric communications and thermal sensing.
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Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (39)
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