The structure and certain dielectric properties of ferroelectric films obtained by the method of annealing pastes or powders

Results are presented of investigations conducted on the dielectric properties of BaTiO3, Ba(TixSn1-x)O3 and (BaxSb1-x)TiO3 films and also films of BaTiO3 with an admixture of selenium or cadmium oxide. These films, obtained by the method of electrophoresis or by screen printing, and next subjected to annealing on a thermo-resistant base, exhibit typical ferroelectric properties. Film thickness was from 1—100 μm. By suitable choice of technological conditions, distinctly textured polycrystalline films were obtained. Due to the high values of permittivity, relatively low dielectric losses, switching ability, strong pyroelectric properties and photosensitivity, these films are of interest not only as the subject of basic research investigations but also from the aspect of practical application.It was shown that apart from the influence of the technological conditions, the dielectric properties of the films obtained are strongly influenced by the measurement field, the type of electrodes deposited, the illumination ultraviolet radiation and the thickness of the films themselves.