Advancing the Coupling of III–V Quantum Dots to Photonic Structures to Shape Their Emission Diagram

Abstract The development of optoelectronic devices based on III–V semiconductor colloidal quantum dots (CQDs) is highly sought after due to their reduced toxicity. While devices based on conventional CQDs (II–VI semiconductors, halide perovskites) have achieved impressive technological leaps since their discovery, the most mature of these compounds contain toxic heavy metal elements (Cd, Hg, or Pb), which are highly undesirable for safe industrial scale applications. The strong covalent bonds of III–V compounds like InP, InAs, or InSb prevent the release of their toxic atoms, making them safer. However, these same bonds create severe material constraints. Namely, their harsher reaction conditions and increased sensitivity to oxidation have kept most of the research focused on material development. Meanwhile, their integration into devices and their coupling to photonic structures lag behind. Here, the integration of InAs/ZnSe core‐shell CQDs is advanced. First, the material parameters necessary to design plasmonic gratings coupled to the CQDs are elucidated and those gratings are fabricated. Angle‐resolved spectroscopy shows that the plasmon modes successfully couple to the CQD layer's emission leading to a tunable directivity with a 15° linewidth. A 3‐fold increase of the PL signal is achieved at normal incidence, thus advancing toward the goal of efficient outcoupling in LEDs.