Room‐Temperature Printing of Ultrathin Quasi‐2D GaN Semiconductor via Liquid Metal Gallium Surface Confined Nitridation Reaction (Adv. Mater. Technol. 11/2022)
Source abstract
Abstract
Surface-Confined Nitridation Reaction In article number 2200733, Jing Liu and co-workers report a fundamental strategy for directly printing GaN semiconductor film with finest thickness of 1nm on the surface of liquid gallium at room temperature. The new chemical reaction was defined and experimentally demonstrated as N 2 + 2 Ga → plasma 2 GaN ${{\rm{N}}_2} + 2{\rm{Ga}}\xrightarrow{{{\rm{plasma}}}}2{\rm{GaN}}$ . Such 2D GaN film with large area, uniformity and controllable thickness can be deposited on various substrates. This opens the way for facilely printing GaN based electronic devices in the coming time.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Beijing Key Lab of Cryo‐Biomedical Engineering and Key Lab of Cryogenics Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
School of Engineering Science University of Chinese Academy of Sciences Beijing 100190 P. R. China
State Key Laboratory of Laser Propulsion and Application Space Engineering University Beijing 101416 P. R. China
Department of Biomedical Engineering School of Medicine Tsinghua University Beijing 100084 P. R. China
References
Reference metadata was not supplied for this record.