Hydrogen in amorphous semiconductors
Source abstract
Abstract
Abstract Over the past 5 years, there has been growing interest in a class of amorphous semiconductors deposited in thin-film form in the presence of hydrogen. The interest has derived primarily from certain electronic properties, such as the ability to control the Fermi level by substitutional doping, that make the materials potential candidates for solar photovoltaic energy conversion and thin-film device applications. These same properties have also made the materials attractive “test-beds” for basic research into electronic processes and defect states in amorphous semiconductors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Phase-change materials and chalcogenides · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. Lewis A. J. · AIP Conf. Proc. · 1974 · 20 · 27
2. 10.1080/0001873770010146310.1080/00018737700101463 ↗
3. Carlson D. E. · RCA Rev. · 1977 · 38 · 211
4. 10.1021/j100845a05910.1021/j100845a059 ↗
5. Perkins G. C. A. · J. Phys. Chem. Soc. · 1979 · 101 · 1109
6. 10.1149/1.241177910.1149/1.2411779 ↗
7. 10.1016/0022-3093(76)90134-410.1016/0022-3093(76)90134-4 ↗
8. Brodsky, M. H. and Title, R. S. 1976.Structure and Excitations of Amorphous Solids, 97New York: American Institute of Physics.
9. Kirk, R. W. 1974.Techniques and Applications of Plasma Chemistry, 372New York: John Wiley & Sons.
10. Tsai, C. C. 1978. private communication
11. Spear, W. E. and LeComber, P. G. 1977.Amorphous and Liquid Semiconductors, Edited by: Spears, W. E. 309Dundee, Scotland: G. G. Stevenson.
12. 10.1063/1.3077010.1063/1.30770 ↗
13. Kern W. · 1978
14. Maissel L. · 1970
15. 10.1063/1.9108610.1063/1.91086 ↗
16. Kauffman, F. 1969.Advances in Chemistry, (Series 80) 29Washington, D.C.: American Chemical Society.
17. Fite, W. 1969.Advances in Chemistry, Series 80 1Washington, D.C.: American Chemical Society.10.1021/ba-1969-0080.ch001 ↗
18. 10.1021/j100567a00110.1021/j100567a001 ↗
19. 10.1016/0040-6090(78)90092-510.1016/0040-6090(78)90092-5 ↗
20. 10.1103/PhysRevB.16.355610.1103/PhysRevB.16.3556 ↗
21. Phelps, A. V. 1969.Advances in Chemistry, Series 80 18Washington, D.C.: American Chemical Society.10.1021/ba-1969-0080.ch002 ↗
22. 10.1021/j100784a01610.1021/j100784a016 ↗
23. 10.1103/PhysRevB.18.188010.1103/PhysRevB.18.1880 ↗
24. Knights J. C. · Philos. Mag. · 1978 · 37 · 46710.1080/01418637808225790 ↗
25. Hirose, M., Taniguchi, M. and Osaka, Y. 1977.Amorphous and Liquid Semiconductors, Edited by: Spears, W. E. 352Dundee, Scotland: G. G. Stevenson.
26. Moss, T. S. 1952.Photoconductivity in the Elements, 160London: Butterworth.
27. Laubengayer A. W. · J. Am. Chem. Soc. · 1924 · 65 · 1943
28. Hagenmuller P. · Rev. Hautes Temp. Refract. · 1965 · 2 · 225
29. Naslain, R. 1972.Preparative Methods in Solid State Chemistry, Edited by: Hagenmuller, P. 440New York: Academic Press.
30. 10.1038/276482b010.1038/276482b0 ↗
31. Hultquist, A. E. and Silber, M. E. 1969.Advances in Chemistry, Series 80 182Washington, D.C.: American Chemical Society.10.1021/ba-1969-0080.ch015 ↗
32. Wales, R. D. 1969.Advances in Chemistry, Series 80 198Washington, D.C.: American Chemical Society.10.1021/ba-1969-0080.ch016 ↗
33. 10.1016/0022-3093(72)90140-810.1016/0022-3093(72)90140-8 ↗
34. 10.1063/1.8857010.1063/1.88570 ↗
35. Bourdon, B., Sifre, G. and Solomon, I. Proc. 6th Int. Conf. on Chemical Vapor Deposition. Vol. 77–5, pp.220Atlanta: Electrochemical Society.
36. 10.1116/1.57011110.1116/1.570111 ↗
37. 10.1103/PhysRevB.13.78710.1103/PhysRevB.13.787 ↗
38. 10.1007/BF0139760010.1007/BF01397600 ↗
39. 10.1103/PhysRevB.20.71610.1103/PhysRevB.20.716 ↗
40. Paul, W. 1978. private communication
41. 10.1103/PhysRevLett.41.149210.1103/PhysRevLett.41.1492 ↗
42. LeComber, P. G., Loveland, R. J., Spear, W. E. and Vaughan, R. A. 1974.Amorphous and Liquid Semiconductors, Edited by: Stuke, J. and Brenig, W. 245London: Taylor and Francis.
43. 10.1063/1.9037010.1063/1.90370 ↗
44. 10.1063/1.9007810.1063/1.90078 ↗
45. 10.1063/1.32632610.1063/1.326326 ↗
46. Magee C. W. · Rev. Sci. Instrum.
47. 10.1063/1.8882610.1063/1.88826 ↗
48. 10.1063/1.8978710.1063/1.89787 ↗
49. Fritzsche H. · Solid State Technol. · 1978 · 21 · 55
50. 10.1063/1.8926010.1063/1.89260 ↗
51. 10.1063/1.32667210.1063/1.326672 ↗
52. 10.1063/1.9015310.1063/1.90153 ↗
53. Knights J. C. · Jpn. J. Appl. Phys. · 1979 · 18 · 10110.7567/JJAPS.18S1.101 ↗
54. 10.1021/ja01369a02410.1021/ja01369a024 ↗
55. 10.1103/PhysRevB.19.204110.1103/PhysRevB.19.2041 ↗
56. 10.1021/ja01567a02410.1021/ja01567a024 ↗
57. Knights, J. C. 1977. unpublished results
58. Lucovsky, G. 1974.Amorphous and Liquid Semiconductors, Edited by: Stuke, J. and Brenig, W. 1099London: Taylor and Francis.
59. Connell, G. A. N. and Lucovsky, G. Proc. Conf. Atomic Scale Structure of Amorphous Solids. Edited by: Cargill, G. S. Ill and Chaudhari, T. pp.123Amsterdam: North-Holland.
60. Lucovsky G. · 1974 · 36
61. 10.1063/1.175036310.1063/1.1750363 ↗
62. Herzberg G. · 1945 · 2
63. 10.1119/1.199076310.1119/1.1990763 ↗
64. 10.1063/1.174188110.1063/1.1741881 ↗
65. 10.1063/1.174388810.1063/1.1743888 ↗
66. Rochow E. G. · 1975 · 9
67. 10.1246/bcsj.34.149510.1246/bcsj.34.1495 ↗
68. 10.1007/978-94-011-6017-910.1007/978-94-011-6017-9 ↗
69. 10.1016/S0371-1951(59)80334-910.1016/S0371-1951(59)80334-9 ↗
70. 10.1016/0371-1951(60)80080-X10.1016/0371-1951(60)80080-X ↗
71. Egorohkin A. N. · Inv. Akad. Nauk Uzb. SSR., Set. Khim. Nauk · 1970 · 5 · 1194
72. 10.1016/0038-1098(79)90666-510.1016/0038-1098(79)90666-5 ↗
73. Sanderson, R. T. 1960.Chemical Periodicity, 16New York: Reinhold.
74. 10.1103/PhysRevB.19.206410.1103/PhysRevB.19.2064 ↗
75. Wieder, H., Cardona, M. and Guarnieri, C. R. preprint
76. 10.1016/S0081-1947(08)60542-110.1016/S0081-1947(08)60542-1 ↗
77. 10.1103/PhysRevB.11.227110.1103/PhysRevB.11.2271 ↗
78. 10.1103/PhysRevB.16.294210.1103/PhysRevB.16.2942 ↗
79. 10.1016/0022-2852(61)90347-210.1016/0022-2852(61)90347-2 ↗
80. 10.1103/PhysRevB.18.428810.1103/PhysRevB.18.4288 ↗
81. 10.1149/1.240831810.1149/1.2408318 ↗
82. 10.1016/0022-3093(79)90084-X10.1016/0022-3093(79)90084-X ↗
83. 10.1002/app.1972.07016091110.1002/app.1972.070160911 ↗
84. 10.1002/app.1973.07017031810.1002/app.1973.070170318 ↗
85. 10.1016/0038-1098(78)90260-010.1016/0038-1098(78)90260-0 ↗
86. Bermejo, D., Cardona, M. and Brodsky, M. H. 1977.Amorphous and Liquid Semiconductors, Edited by: Spear, W. E. 343Dundee, Scotland: G. G. Stevenson.
87. Pantelides S. T. · 1978
88. 10.1149/1.240812210.1149/1.2408122 ↗
89. 10.1149/1.213316110.1149/1.2133161 ↗
90. Scsolze H. · Glastech. Bet. · 1959 · 32 · 142
91. Hartwig C. M. · Bull. Am. Phys. Soc. · 1976 · 21 · 227
92. Galeener, F. L. and Geils, R. H. 1976.The Structure of Non-Crystalline Materials, 223London: Taylor and Francis.
93. 10.1149/1.213345110.1149/1.2133451 ↗
94. 10.1063/1.32509510.1063/1.325095 ↗
95. Ovshinsky S. R. · New Sci. · 1978 · 180 · 674
96. 10.1016/0038-1098(77)91232-710.1016/0038-1098(77)91232-7 ↗
97. 10.1002/pssa.221041021710.1002/pssa.2210410217 ↗
98. Knights J. C. · Bull. Am. Phys. Soc. · 1978 · 23 · 295
99. 10.1007/BFb001235510.1007/BFb0012355 ↗
100. Lucovsky, G., Tsai, C. C. and Mikkelsen, J. C. Jr. 1978. unpublished results