Characterization and growth of oxide films

Abstract Surface-analytical techniques are useful to characterize oxide films and to study growth processes on metals and semiconductors. This paper will summarize work at the National Research Council of Canada on the high temperature oxidation of nickel, chromium, FeCrAl alloys (with and without yttrium additions), β-NiAl and silicon. The application of secondary ion mass spectrometry, reflection high energy electron diffraction, and transmission electron microscopy is emphasized. Also considered is the thermal oxidation of III–V semiconductors, indium phosphide and gallium arsenide. X-ray photoelectron spectroscopy provides additional useful information on the chemical composition of the oxides. The often complementary information provided by the various techniques leads to (i) a better understanding of oxidation processes and of oxide growth mechanisms on an atomic scale, (ii) interfacial segregation phenomena, and (iii) the role of reactive elements like yttrium in modifying transport processes in oxides.