DataVXJournal of the Korean Ceramic SocietyPaper
journal article·2026-02-03Open access

Interface dipole modulation for gate dielectrics in Field-Effect transistors: a review

Wangseop Lim, Hyojung Kim, Ho Won Jang

Journal of the Korean Ceramic Society
Publisher pageOpen full text
Source abstract

Abstract

Abstract Interface dipole engineering has recently become a key technology in the fabrication of semiconductor FETs. This review comprehensively covers the principles, methods, and applications of interface dipoles in gate dielectric structures. We discuss the evolution from traditional SiO 2 /poly-Si structures to high-K/metal gate structures, and emphasize the influence of interface dipoles on device electrical characteristics. We examine the mechanisms for interface dipole formation in terms of electronegativity differences, charge transfer, and structural considerations, comparing and reviewing several models. We also cover implementation methods such as layers, interfaces, and positions for forming dipoles, and compare the effects of various combinations. This technology enables device implementation, which has become challenging due to CMOS scaling limitations. This review also discusses the applicability in new device platforms such as two-dimensional material semiconductors and ferroelectric FETs. We review current challenges and future research directions and emphasize the increasing importance of this technology in next-generation semiconductor development. This comprehensive review provides valuable insights from materials science and semiconductor device engineering perspectives.
Source: crossref · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (100+)

Show source-provided references
1. H. Iwai, D. Misra, Electrochem. Soc. Interface 31, 65 (2022). https://doi.org/10.1149/2.F13224IF10.1149/2.F13224IF ↗
2. R.K. Ratnesh, A. Goel, G. Kaushik, H. Garg, M. Chandan, B. Singh, Prasad, Mater. Sci. Semicond. Process. 134, 106002 (2021). https://doi.org/10.1016/j.mssp.2021.10600210.1016/j.mssp.2021.106002 ↗
3. H. Wong, H. Iwai, Microelectron. Eng. 83, 1867 (2006). https://doi.org/10.1016/j.mee.2006.01.27110.1016/j.mee.2006.01.271 ↗
4. M.S. Equbal, S. Sahay, Nanoelectronics: Physics, Materials and Devices (2023). https://doi.org/10.1016/B978-0-323-91832-9.00003-810.1016/B978-0-323-91832-9.00003-8 ↗
5. W. Cao, H. Bu, M. Vinet, M. Cao, S. Takagi, S. Hwang, T. Ghani, K. Banerjee, Nature 620, 501 (2023). https://doi.org/10.1038/s41586-023-06145-x10.1038/s41586-023-06145-x ↗
6. H. Tseng, Solid State Circuits Technol. (2010). https://doi.org/10.5772/687810.5772/6878 ↗
7. C.H. Liu, T.M. Pan, IEEE Trans. Electron Devices 54, 1799 (2007). https://doi.org/10.1109/TED.2007.89866810.1109/TED.2007.898668 ↗
8. R.J. Prentki, M. Harb, C. Zhou, P. Philippopoulos, F. Beaudoin, V. Michaud-Rioux, H. Guo, Solid-State Electron. 197, 108438 (2022). https://doi.org/10.1016/j.sse.2022.10843810.1016/j.sse.2022.108438 ↗
9. M. Chudzik, B. Doris, R. Mo, J. Sleight, E. Cartier, C. Dewan, D. Park, H. Bu, W. Natzle, W. Yan, C. Ouyang, K. Henson, D. Boyd, S. Callegari, R. Carter, D. Casarotto, M. Gribelyuk, M. Hargrove, W. He, Y. Kim, B. Linder, N. Moumen, V.K. Paruchuri, J. Stathis, M. Steen, A. Vayshenker, X. Wang, S. Zafar, T. Ando, R. Iijima, M. Takayanagi, V. Narayanan, R. Wise, Y. Zhang, R. Divakaruni, M. Khare, T.C. Chen, Symposium on VLSI Technology Digest of Technical Papers 194, 978 (2007). https://doi.org/10.1109/VLSIT.2007.433968910.1109/VLSIT.2007.4339689 ↗
10. S.C. Song, Z.B. Zhang, M.M. Hussain, C. Huffman, J. Barnett, S.H. Bae, H.J. Li, P. Majhi, C.S. Park, B.S. Ju, H.K. Park, C.Y. Kang, R. Choi, P. Zeitzoff, H.H. Tseng, B.H. Lee, R. Jammy, Symposium on VLSI Technology Digest of Technical Papers (2006). https://doi.org/10.1109/VLSIT.2006.170519310.1109/VLSIT.2006.1705193 ↗
11. C. Zhao, J. Xiang, Appl. Sci. 9, 2388 (2019). https://doi.org/10.3390/app911238810.3390/app9112388 ↗
12. N. Collaert, Springer Handbook of Semiconductor Devices (2023). https://doi.org/10.1007/978-3-030-79827-7_710.1007/978-3-030-79827-7_7 ↗
13. E. Fortunato, P. Barquinha, R. Martins, Adv. Mater. 24, 2945 (2012). https://doi.org/10.1002/adma.20110322810.1002/adma.201103228 ↗
14. B. Pelloux-Prayer, M. Blagojević, S. Haendler, A. Valentian, A. Amara, P. Flatresse, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, (2013). https://doi.org/10.1109/S3S.2013.671654810.1109/S3S.2013.6716548 ↗
15. T. Kim, J.K. Jeong, physica status solidi (RRL) – Rapid Research Letters 16, 2100394 (2022). https://doi.org/10.1002/pssr.20210039410.1002/pssr.202100394 ↗
16. K. Yim, Y. Yong, J. Lee, K. Lee, H.H. Nahm, J. Yoo, C. Lee, C.S. Hwang, S. Han, NPG Asia Mater. 7, e109 (2015). https://doi.org/10.1038/am.2015.5710.1038/am.2015.57 ↗
17. M. Martin, Frank, European Solid-State Circuits Conference, (2011). https://doi.org/10.1109/ESSCIRC.2011.604491310.1109/ESSCIRC.2011.6044913 ↗
18. G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 89, 5243 (2001). https://doi.org/10.1063/1.136106510.1063/1.1361065 ↗
19. K. Choi, T. Ando, E.A. Cartier, A. Kerber, V. Paruchuri, J. Iacoponi, V. Narayanan, ECS Trans. 53, 17 (2013). https://doi.org/10.1149/05303.0017ecst10.1149/05303.0017ecst ↗
20. C. Hobbs, L. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hegde, D. Gilmer, R. Garcla, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, B. White, P. Tobin, Symposium on VLSI Technology Digest of Technical Papers 9 (2003). https://doi.org/10.1109/VLSIT.2003.122106010.1109/VLSIT.2003.1221060 ↗
21. K. Xiong, P.W. Peacock, J. Robertson, Appl. Phys. Lett. 86, 012904 (2005). https://doi.org/10.1063/1.184461110.1063/1.1844611 ↗
22. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier, M. Buehler, A. Cappellani, R. Chau, C.-H. Choi, G. Ding, K. Fischer, T. Ghani, R. Grover, W. Han, D. Hanken, M. Hattendorf, J. He#, J. Hicks, R. Huessner, D. Ingerly, P. Jain, R. James, L. Jong, S. Joshi, C. Kenyon, K. Kuhn, K. Lee, H. Liu, J. Maiz#, B. Mcintyre, P. Moon, J. Neirynck, S. Pae, C. Parker, D. Parsons, C. Prasad#, L. Pipes, M. Prince, P. Ranade, T. Reynolds, J. Sandford, L. Shifren°, J. Sebastian, J. Seiple, D. Simon, S. Sivakumar, P. Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams, K. Zawadzki, Int. Electron. Devices Meeting. (2007). https://doi.org/10.1109/IEDM.2007.441891410.1109/IEDM.2007.4418914 ↗
23. P. Packan, S. Akbar, M. Armstrong, D. Bergstrom, M. Brazier, H. Deshpande, K. Dev, G. Ding, T. Ghani, O. Golonzka, W. Han, J. He, R. Heussner, R. James, J. Jopling, C. Kenyon, S. Lee, M. Liu, S. Lodha, B. Mattis, A. Murthy, L. Neiberg, J. Neirynck, S. Pae, C. Parker, L. Pipes, J. Sebastian, J. Seiple, B. Sell, A. Sharma, S. Sivakumar, B. Song, A. St Amour, K. Tone, T. Troeger, C. Weber, K. Zhang, Y. Luo, S. Natarajan, Int. Electron. Devices Meeting. (2009). https://doi.org/10.1109/IEDM.2009.542425310.1109/IEDM.2009.5424253 ↗
24. Y. He, Y. Chen, H. Liu, Y. He, J. Wu, D.W. Zhang, ECS J. Solid State Sci. Technol. 6, 296 (2017). https://doi.org/10.1149/2.0221705jss10.1149/2.0221705jss ↗
25. K. Shibahara, International Symposium on VLSI Technology, Systems, and Applications (2006). https://doi.org/10.1109/VTSA.2006.25108610.1109/VTSA.2006.251086 ↗
26. M.M. Hussain, C.E. Smith, H.R. Harris, C.D. Young, H.H. Tseng, R. Jammy, IEEE Trans. Electron Devices 57, 626 (2010). https://doi.org/10.1109/TED.2009.203909710.1109/TED.2009.2039097 ↗
27. A. Veloso, L.-Å. Ragnarsson, M.J. Cho, K. Devriendt, K. Kellens, F. Sebaai, S. Suhard, S. Brus, Y. Crabbe, T. Schram, E. Röhr, V. Paraschiv, G. Eneman, T. Kauerauf, M. Dehan, S.-H. Hong, S. Yamaguchi, S. Takeoka, Y. Higuchi, H. Tielens, A. Van Ammel, P. Favia, H. Bender, A. Franquet, T. Conard, X. Li, K.-L. Pey, H. Struyf, P. Mertens, P.P. Absil, N. Horiguschi, T. Hoffmann, Symposium on VLSI Technology Digest of Technical Papers (2011)
28. L. Khomenkova, B.S. Sahu, A. Slaoui, F. Gourbilleau, Nanoscale Res. Lett. 6, 172 (2011). https://doi.org/10.1186/1556-276X-6-17210.1186/1556-276X-6-172 ↗
29. V. Misra, G. Lucovsky, G. Parsons, MRS Bull. (2002). https://doi.org/10.1557/mrs2002.7310.1557/mrs2002.73 ↗
30. M. Choi, J. Sim, H. Kim, H.J. Lim, K.S. Kim, C. Choi, Mater. Sci. Semicond. Process. 176, 108352 (2024). https://doi.org/10.1016/j.mssp.2024.10835210.1016/j.mssp.2024.108352 ↗
31. M. Urano, T. Douseki, T. Hatano, H. Fukuda, M. Harada, T. Tsuchiya, IEEE (1997). https://doi.org/10.1109/ASIC.1997.61696810.1109/ASIC.1997.616968 ↗
32. T.B. Hook, J.B. Johnson, J.P. Han, A. Pond, T. Shimizu, G. Tsutsui, IEEE Trans. Electron. Devices. 57, 2440 (2010). https://doi.org/10.1109/TED.2010.205719310.1109/TED.2010.2057193 ↗
33. S.S. Rajput, S.S. Jamuar, IEEE Circuits Syst. Mag. (2002). https://doi.org/10.1109/MCAS.2002.99970310.1109/MCAS.2002.999703 ↗
34. M.J.M. Pelgrom, A.C.J. Duinmaijer, A.P.G. Welbers, IEEE J. Solid-State Circuits 24, 1433 (1989). https://doi.org/10.1109/JSSC.1989.57262910.1109/JSSC.1989.572629 ↗
35. J. Kim, C. Oh, Y. Shin, ACM Trans. Des. Autom. Electron. Syst. 15, 4 (2009). https://doi.org/10.1145/1640457.164046110.1145/1640457.1640461 ↗
36. A.P. Chandrakasan, R.W. Brodersen, Proc. IEEE (1995). https://doi.org/10.1109/5.37196410.1109/5.371964 ↗
37. J. Kao, A. Chandrakasan, D. Antoniadis, ACM (1997). https://doi.org/10.1109/DAC.1997.59718210.1109/DAC.1997.597182 ↗
38. S. Mutoh, T. Douseki, Y. Matsuya, T. Aoki, J. Yamada, IEEE (1993). https://doi.org/10.1109/ASIC.1993.41083610.1109/ASIC.1993.410836 ↗
39. I. De, D. Johri, A. Srivastava, C.M. Osburn, Solid-State Electron. (2000). https://doi.org/10.1016/S0038-1101(99)00323-810.1016/S0038-1101(99)00323-8 ↗
40. T.W. Sigmon, R. Swanson, Solid-State Electron. 16, 1217 (1973). https://doi.org/10.1016/0038-1101(73)90077-410.1016/0038-1101(73)90077-4 ↗
41. A. Cathignol, S. Bordez, A. Cros, K. Rochereau, G. Ghibaudo, Solid-State Electron. 53, 127 (2009). https://doi.org/10.1016/j.sse.2008.09.01710.1016/j.sse.2008.09.017 ↗
42. G.S. Virdi, S. Singh, B.C. Pathak, W.S. Khokle, Microelectron. J. 19, 19 (1988). https://doi.org/10.1016/S0026-2692(88)80182-410.1016/S0026-2692(88)80182-4 ↗
43. J.H. Park, T. Chang, M. Kim, S. Woo, S. Kim, Superlattices Microstruct. 113, 169 (2018). https://doi.org/10.1016/j.spmi.2017.10.03410.1016/j.spmi.2017.10.034 ↗
44. J. Westlinder, G. Sjöblom, J. Olsson, Microelectron. Eng. 75, 389 (2004). https://doi.org/10.1016/j.mee.2004.07.06110.1016/j.mee.2004.07.061 ↗
45. Y.-C. Yeo, Q. Lu, P. Ranade, H. Takeuchi, K.J. Yang, I. Polishchuk, T.-J. King, C. Hu, S.C. Song, H.F. Luan, D.-L. Kwong, IEEE Electron Device Lett. 22, 227 (2001). https://doi.org/10.1109/55.91923710.1109/55.919237 ↗
46. L.P.B. Lima, H.F.W. Dekkers, J.G. Lisoni, J.A. Diniz, S. Van Elshocht, S. De Gendt, J. Appl. Phys. 115, 074504 (2014). https://doi.org/10.1063/1.486632310.1063/1.4866323 ↗
47. I.S. Jeon, J. Lee, P. Zhao, P. Sivasubramani, T. Oh, H.J. Kim, D. Cha, J. Huang, M.J. Kim, B.E. Gnade, J. Kim, R.M. Wallace, Int. Electron. Devices Meeting. (2004). https://doi.org/10.1109/IEDM.2004.141913910.1109/IEDM.2004.1419139 ↗
48. I. Polishchuk, S. Member, P. Ranade, T.-J. King, S. Member, C. Hu, IEEE Electron Device Lett. 22, 444 (2001). https://doi.org/10.1109/55.94433410.1109/55.944334 ↗
49. J. He, L. Iagher, L. Etgar, D. Avnir, Chem. Commun. 54, 7203 (2018). https://doi.org/10.1039/c8cc01637b10.1039/c8cc01637b ↗
50. R. Jha, J.H. Lee, P. Majhi, V. Misra, Appl. Phys. Lett. 87, 223503 (2005). https://doi.org/10.1063/1.213642510.1063/1.2136425 ↗
51. F. Fillot, T. Morel, S. Minoret, I. Matko, S. Maîtrejean, B. Guillaumot, B. Chenevier, T. Billon, Microelectron. Eng. 82, 248 (2005). https://doi.org/10.1016/j.mee.2005.07.08310.1016/j.mee.2005.07.083 ↗
52. E.O. Filatova, A.S. Konashuk, S.S. Sakhonenkov, A.U. Gaisin, N.M. Kolomiiets, V.V. Afanas’ev, H.F.W. Dekkers, J. Phys. Chem. C 124, 15547 (2020). https://doi.org/10.1021/acs.jpcc.0c0360510.1021/acs.jpcc.0c03605 ↗
53. H. Kim, K. Choi, H. Lee, W. Lee, Electron. Mater. Lett. 21, 559 (2025). https://doi.org/10.1007/s13391-025-00573-910.1007/s13391-025-00573-9 ↗
54. A. Singh, P. Hazarika, J. Saha, M.P. Gogoi, R. Goswami, R. Saha, Trans. Electr. Electron. Mater. (2025). https://doi.org/10.1007/s42341-025-00627-710.1007/s42341-025-00627-7 ↗
55. V. Narayanan, V.K. Paruchuri, N.A. Bojarczuk, B.P. Linder, B. Doris, Y.H. Kim, S. Zafar, J. Stathis, S. Brown, J. Arnold, M. Copel, M. Steen, E. Cartier, A. Callegari, P. Jamison, J.-P. Locquet, D.L. Lacey, Y. Wang, P.E. Batson, P. Ronsheim, R. Jammy, M.P. Chudzik, M. Ieong, S. Guha, G. Shahidi, T.C. Chen, Symposium on VLSI Technology Digest of Technical Papers (2006). https://doi.org/10.1109/VLSIT.2006.170527510.1109/VLSIT.2006.1705275 ↗
56. S. Yamaguchi, Z. Bayindir, X. He, S. Uppal, P. Srinivasan, C. Yong, D. Choi, M. Joshi, H.S. Yang, O. Hu, S. Samavedam, D.K. Sohn, Microelectron. Reliab. 72, 80 (2017). https://doi.org/10.1016/j.microrel.2017.04.00410.1016/j.microrel.2017.04.004 ↗
57. A.S. Al-Jawadi, M.T. Yaseen, Q.T. Algwari, E-Prime. Adv. Electr. Eng. Electron. Energy 11, 100934 (2025). https://doi.org/10.1016/j.prime.2025.10093410.1016/j.prime.2025.100934 ↗
58. C. Ren, B.B. Faizhal, D.S.H. Chan, M.F. Li, Y.C. Yeo, A.D. Trigg, N. Balasubramanian, D.L. Kwong, Thin Solid Films 504, 174 (2006). https://doi.org/10.1016/j.tsf.2005.09.08110.1016/j.tsf.2005.09.081 ↗
59. C.L. Cheng, C.W. Liu, J.T. Jeng, Appl. Phys. Lett. 90, 062114 (2007). https://doi.org/10.1063/1.247253110.1063/1.2472531 ↗
60. N. Yoshida, K. Han, P. Hsu, M. Beach, X. Lu, R. Hung, D. Mao, H. Chen, W. Tang, Y. Lei, J. Zhou, A. Noori, M. Jin, K. Xu, A. Phatak, S. Sun, S. Hassan, S. Gandikota, C. Chang, A. Brand, International Symposium on VLSI Technology, Systems, and Applications (2014). https://doi.org/10.1109/VLSI-TSA.2014.683964710.1109/VLSI-TSA.2014.6839647 ↗
61. Z.C. Yang, A.P. Huang, L. Yan, Z.S. Xiao, X.W. Zhang, P.K. Chu, W.W. Wang, Appl. Phys. Lett. 94, 252905 (2009). https://doi.org/10.1063/1.315983010.1063/1.3159830 ↗
62. X.P. Wang, M.F. Li, C. Ren, X.F. Yu, C. Shen, H.H. Ma, A. Chin, C.X. Zhu, J. Ning, M.B. Yu, D.L. Kwong, IEEE Electron Device Lett. 27, 31 (2006). https://doi.org/10.1109/LED.2005.85995010.1109/LED.2005.859950 ↗
63. A.E.J. Lim, D.L. Kwong, Y.C. Yeo, IEEE Trans. Electron Devices 56, 466 (2009). https://doi.org/10.1109/TED.2008.201157210.1109/TED.2008.2011572 ↗
64. K. Kita, A. Toriumi, Appl. Phys. Lett. 94, 132902 (2009). https://doi.org/10.1063/1.311096810.1063/1.3110968 ↗
65. P.D. Kirsch, P. Sivasubramani, J. Huang, C.D. Young, M.A. Quevedo-Lopez, H.C. Wen, H. Alshareef, K. Choi, C.S. Park, K. Freeman, M.M. Hussain, G. Bersuker, H.R. Harris, P. Majhi, R. Choi, P. Lysaght, B.H. Lee, H.H. Tseng, R. Jammy, T.S. Böscke, D.J. Lichtenwalner, J.S. Jur, A.I. Kingon, Appl. Phys. Lett. 92, 092901 (2008). https://doi.org/10.1063/1.289005610.1063/1.2890056 ↗
66. L. Lin, J. Robertson, J. Appl. Phys. 109, 094502 (2011). https://doi.org/10.1063/1.358365510.1063/1.3583655 ↗
67. X. Wang, K. Han, W. Wang, X. Ma, J. Xiang, D. Chen, J. Zhang, Jpn. J. Appl. Phys. 50, 10PF02 (2011). https://doi.org/10.1143/JJAP.50.10PF0210.1143/JJAP.50.10PF02 ↗
68. N. Miyata, Sci. Rep. 8, 8486 (2018). https://doi.org/10.1038/s41598-018-26692-y10.1038/s41598-018-26692-y ↗
69. Z.Q. Liu, W.K. Chim, S.Y. Chiam, J.S. Pan, C.M. Ng, J. Mater. Chem. 22, 17887 (2012). https://doi.org/10.1039/c2jm32589f10.1039/c2jm32589f ↗
70. Y.D. Lv, L. Shen, Y.C. Li, C.Y. Shi, Z.Y. Huang, X. Yu, X.N. Zhu, H.L. Lu, S. Yu, D.W. Zhang, ACS Appl. Nano Mater. 7, 28496 (2024). https://doi.org/10.1021/acsanm.4c0564910.1021/acsanm.4c05649 ↗
71. X.H. Zheng, A.P. Huang, Z.S. Xiao, M. Wang, X.Y. Liu, Z.W. Wu, P.K. Chu, Appl. Phys. Lett. 99, 131914 (2011). https://doi.org/10.1063/1.364351710.1063/1.3643517 ↗
72. Y. Abe, N. Miyata, Y. Shiraki, T. Yasuda, Appl. Phys. Lett. 90, 172906 (2007). https://doi.org/10.1063/1.273151410.1063/1.2731514 ↗
73. S. Guha, V.K. Paruchuri, M. Copel, V. Narayanan, Y.Y. Wang, P.E. Batson, N.A. Bojarczuk, B. Linder, B. Doris, Appl. Phys. Lett. 90, 092902 (2007). https://doi.org/10.1063/1.270964210.1063/1.2709642 ↗
74. H.-J. Cho, H.Y. Yu, L.-A. Ragnarsson, V.S. Chang, T. Schram, B.J. O’sullivan, S. Kubicek, R. Mitsuhashi, A. Akheyar, S. Van Elshocht, T. Witters, A. Delabie, C. Adelmann, E. Rohr, R. Singanamalla, S.-Z. Chang, J. Swerts, P. Lehnen, S. De Gendt, P.P. Absil, S. Biesemans, IEEE International Conference on Integrated Circuit Design and Technology (2007). https://doi.org/10.1109/ICICDT.2007.429955210.1109/ICICDT.2007.4299552 ↗
75. K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai, Solid-State Electron. 52, 1280 (2008). https://doi.org/10.1016/j.sse.2008.04.01510.1016/j.sse.2008.04.015 ↗
76. S.Y. Lee, H.-S. Jung, H.K. Kim, S.W. Lee, Y.J. Choi, C.S. Hwang, ECS Trans. 33, 53 (2010). https://doi.org/10.1149/1.348159110.1149/1.3481591 ↗
77. Z. Wang, J. Zhang, R. Yang, D. Hu, Z. Ye, J. Lu, Electron. Mater. Lett. 21, 337 (2025). https://doi.org/10.1007/s13391-025-00554-y10.1007/s13391-025-00554-y ↗
78. Y. Zhang, M. Choi, Z. Wang, C. Choi, Appl. Surf. Sci. 609, 155295 (2023). https://doi.org/10.1016/j.apsusc.2022.15529510.1016/j.apsusc.2022.155295 ↗
79. T. Morooka, T. Matsuki, N. Mise, S. Kamiyama, T. Nabatame, T. Eimori, Y. Nara, Y. Ohji, Jpn. J. Appl. Phys. 48, 04C010 (2009). https://doi.org/10.1143/JJAP.48.04C01010.1143/JJAP.48.04C010 ↗
80. A. Eu, J. Lim, J. Hou, D.-L. Kwong, Y.-C. Yeo, Int. Electron. Devices Meeting. (2008). https://doi.org/10.1109/IEDM.2008.479660610.1109/IEDM.2008.4796606 ↗
81. A.E.J. Lim, R.T.P. Lee, G.S. Samudra, D.L. Kwong, Y.C. Yeo, IEEE Electron Device Lett. 29, 848 (2008). https://doi.org/10.1109/LED.2008.200099710.1109/LED.2008.2000997 ↗
82. Z. Hu, Z. Zhong, K. Zhang, Z. Hu, C. Song, F. Huang, J. Peng, J. Wang, Y. Cao, NPG Asia Mater. 9, e379 (2017). https://doi.org/10.1038/am.2017.5610.1038/am.2017.56 ↗
83. T.H. Kil, M. Noguchi, H. Watanabe, K. Kita, IEEE Electron Device Lett. 43, 92 (2022). https://doi.org/10.1109/LED.2021.312594510.1109/LED.2021.3125945 ↗
84. Y. Jeong, V. Gaddam, Y. Goh, H. Shin, S. Lee, G. Kim, S. Jeon, IEEE Trans. Electron Devices 70, 354 (2023). https://doi.org/10.1109/TED.2022.322388610.1109/TED.2022.3223886 ↗
85. A. Liu, X. Zhang, Z. Liu, Y. Li, X. Peng, X. Li, Y. Qin, C. Hu, Y. Qiu, H. Jiang, Y. Wang, Y. Li, J. Tang, J. Liu, H. Guo, T. Deng, S. Peng, H. Tian, T.L. Ren, Nano-Micro Lett. 16, 119 (2024). https://doi.org/10.1007/s40820-023-01273-510.1007/s40820-023-01273-5 ↗
86. J.W. Kim, S.Y. Lee, J. Korean Ceram. Soc. 61, 941 (2024). https://doi.org/10.1007/s43207-024-00409-610.1007/s43207-024-00409-6 ↗
87. S. Mukesh, J. Zhang, Electronics (Switzerland) 11, 3589 (2022). https://doi.org/10.3390/electronics1121358910.3390/electronics11213589 ↗
88. M. Kang, M. Chang, Y. Park, C. Noh, S.H. Hong, B. Park, Y.H. Park, Y.C. Jung, W.S. Lim, G.H. Kim, Y. Lee, H. Yang, D. Shin, J.G. Yang, K.H. Cho, W.C. Jeong, H.J. Cho, W.H. Kwon, D.W. Kim, K. Rim, J.H. Song, IEEE International Reliability Physics Symposium Proceedings (2024). https://doi.org/10.1109/IRPS48228.2024.1052940110.1109/IRPS48228.2024.10529401 ↗
89. J. Zhang, T. Ando, C.W. Yeung, M. Wang, O. Kwon, R. Galatage, R. Chao, N. Loubet, B.K. Moon, R. Bao, R.A. Vega, J. Li, C. Zhang, Z. Liu, M. Kang, X. Miao, J. Wang, S. Kanakasabapathy, V.S. Basker, H. Jagannathan, T. Yamashita, IEEE Int. Electron. Devices Meeting. (2017). https://doi.org/10.1109/IEDM.2017.826843810.1109/IEDM.2017.8268438 ↗
90. J.V. Suman, A.S. Priya, G.M.A. Priyadarshini, K. Krishnamraju, A. Gangadhar, M. Hema, Adv. Comput. Sci. Res. (2024). https://doi.org/10.2991/978-94-6463-471-6_13110.2991/978-94-6463-471-6_131 ↗
91. M. Togo, R. Asra, P. Balasubramaniam, X. Zhang, H. Yu, S. Yamaguchi, E. Geiss, H.S. Yang, B. Cohen, H. Lo, O. Hu, H. Lazar, O. Kwon, D. Burnett, J. Versaggi, E. Banghart, M.K. Hassan, E.B.L. Pantisano, J.G. Lee, S.B. Samavedam, D.K. Sohn, IEEE Symposium on VLSI Technology (2018). https://doi.org/10.1109/VLSIT.2018.851064110.1109/VLSIT.2018.8510641 ↗
92. H.-J. Cho, H.S. Oh, K.J. Nam, Y.H. Kim, K.H. Yeo, W.D. Kim, Y.S. Chung, Y.S. Nam, S.M. Kim, W.H. Kwon, M.J. Kang, I.R. Kim, H. Fukutome, C.W. Jeong, H.J. Shin, Y.S. Kim, D.W. Kim, S.H. Park, H.S. Oh, J.H. Jeong, S.B. Kim, D.W. Ha, J.H. Park, H.S. Rhee, S.J. Hyun, D.S. Shin, D.H. Kim, H.Y. Kim, S. Maeda, K.H. Lee, Y.H. Kim, M.C. Kim, Y.S. Koh, B. Yoon, K. Shin, N.I. Lee, S.B. Kangh, K.W. Hwang, J.H. Lee, J.-H. Ku, S.W. Nam, S.M. Jung, H.K. Kang, J.S. Yoon, E. Jung, IEEE Symposium on VLSI Technology (2016). https://doi.org/10.1109/VLSIT.2016.757335910.1109/VLSIT.2016.7573359 ↗
93. H. Shin, V. Gaddam, Y. Goh, Y. Jeong, G. Kim, Y. Qin, S. Jeon, Appl. Phys. Lett. 122, 022901 (2023). https://doi.org/10.1063/5.012331210.1063/5.0123312 ↗
94. J.Y. Kim, M.J. Choi, H.W. Jang, APL Mater. 9, 021102 (2021). https://doi.org/10.1063/5.003551510.1063/5.0035515 ↗
95. J. Shin, H. Seo, K.H. Ye, Y.H. Jang, D.S. Kwon, J. Lim, T.K. Kim, H. Paik, H. Song, H.N. Kim, S. Byun, S.J. Shin, K.D. Kim, Y.B. Lee, I.S. Lee, J.H. Choi, C.S. Hwang, J. Mater. Chem. C 12, 5035 (2024). https://doi.org/10.1039/d4tc00061g10.1039/d4tc00061g ↗
96. H. Kwon, G.H. Hwang, C.I. Cheon, K.W. Chae, J. Sens. Sci. Technol. 32, 238 (2023). https://doi.org/10.46670/JSST.2023.32.4.23810.46670/JSST.2023.32.4.238 ↗
97. T. Roy, M. Tosun, J.S. Kang, A.B. Sachid, S.B. Desai, M. Hettick, C.C. Hu, A. Javey, ACS Nano 8, 6259 (2014). https://doi.org/10.1021/nn501723y10.1021/nn501723y ↗
98. J. Wang, Z. Ji, G. Yang, X. Chuai, F. Liu, Z. Zhou, C. Lu, W. Wei, X. Shi, J. Niu, L. Wang, H. Wang, J. Chen, N. Lu, C. Jiang, L. Li, M. Liu, Adv. Funct. Mater. 28, 1806244 (2018). https://doi.org/10.1002/adfm.20180624410.1002/adfm.201806244 ↗
99. N. Zhao, S. Tyagi, U. Schwingenschlögl, NPG Asia Mater. 15, 71 (2023). https://doi.org/10.1038/s41427-023-00517-510.1038/s41427-023-00517-5 ↗
100. J. Li, W. Liu, W. Zhou, J. Yang, H. Qu, Y. Hu, S. Zhang, Phys. Rev. Appl. 17, 054009 (2022). https://doi.org/10.1103/PhysRevApplied.17.05400910.1103/PhysRevApplied.17.054009 ↗