Correlation Between Electrical and Structural Characterization of In0.53Ga0.47As / Si3 N 4 Interfaces on MIS Structures
Source abstract
Abstract
In this work a study of the slow states present in the interfaces on metal‐insulator‐semiconductor structures is carried out. A method to obtain the profiles of slow states in the insulator from electrical measurements performed under constant capacitance conditions is reported. These profiles have been correlated with the structural characterization of the interface performed in situ during the surface treatments.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Semiconductor Quantum Structures and Devices
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Affiliations
Càtedra d'Electrònica, Facultat de Física, Universitat de Barcelona, Barcelona E‐08028, Spain
Laboratoires d'Electronique Philips, BP 15‐94450, Limeil‐Brevannes, France
References
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