A Novel Si‐B Diffusion Source for p + ‐ Poly ‐ Si Gate
Source abstract
Abstract
In this paper, we report a novel Si‐B diffusion source for gate p‐metal oxide‐semiconductor field effect transistors (p‐MOSFETs). It is found that boron penetration can be effectively suppressed using this process. All the electrical properties of the MOS capacitors are significantly improved over the conventional or samples. This process is very promising for fabrication of future surface‐channel p‐MOSFETs. © 1999 The Electrochemical Society. All rights reserved.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Silicon and Solar Cell Technologies
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Affiliations
National Nano Device Laboratories, Hsinchu 300, Taiwan
Department of Electronics Engineering and institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan
United Micro Electronics Corporation, Science‐Based Industrial Park, Hsinchu, Taiwan
References
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