Capless Rapid Thermal Annealing of GaAs Implanted with Si+ Using an Enhanced Overpressure Proximity Method

A new approach for capless rapid thermal annealing of ion implanted III–V semiconductors, the enhanced overpressure proximity (EOP) technique, has been developed and applied to implanted with Si + . The EOP method relies on the use of an Sn‐coated wafer to provide a greater localized arsenic overpressure than can be achieved by the conventional proximity method which utilizes a wafer. Implant doses of have been investigated, yielding activations as high as 60 and 35%, respectively. Under the appropriate annealing conditions photoluminescence data confirm that EOP‐RTA reduces the concentration of Si on As sites when compared with the conventional proximity approach. In addition, this technique permits an increased latitude in annealing times and temperatures that can be used without degradation of the wafer surface. The EOP approach can be easily extended for capless rapid thermal annealing of other implanted dopants in as well as other III–V compounds such as and .