MOS Device Fabrication Using X‐Ray Lithography
Source abstract
Abstract
X‐ray lithography has been applied to fabricate n‐MOS devices such as transistor matrixes, ring oscillators, and MOS capacitors. A propagation delay time as low as 200 psec/gate, and about 0.12 pJ power‐delay product were obtained from the ring oscillator with 0.7 μm effective gate length. From the threshold voltage measurements of the transistor matrixes, it was found that the standard threshold voltage deviation in MOSFET's with 1.5 μm effective gate length in a chip and the deviation in a wafer were as low as 5 and 7 mV, respectively.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advancements in Photolithography Techniques · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
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Affiliations
Nippon Electric Company, Limited, Basic Technology Research Laboratories, Takatsu‐ku, Kawasaki 213, Japan
Nippon Telegraph and Telephone Public Corporation, Musashino Electrical Communication Laboratory, Musashino, Tokyo 180, Japan
References
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